Ramm; Mark Spiridonovich
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ramm; Mark Spiridonovich.The latest application filed is for "apparatus for growing low defect density silicon carbide".
- Ramm; Mark Spiridonovich - St. Petersburg RU
- Ramm; Mark Spiridonovich - 197198 St. Petersburg RU
| Patent | Date |
|---|---|
| Apparatus for growing low defect density silicon carbide Grant 6,863,728 - Vodakov , et al. March 8, 2 | 2005-03-08 |
| Apparatus for growing low defect density silicon carbide App 20030094132 - Vodakov, Yury Alexandrovich ; et al. | 2003-05-22 |
| Low defect axially grown single crystal silicon carbide Grant 6,562,130 - Vodakov , et al. May 13, 2 | 2003-05-13 |
| Niobium crucible fabrication and treatment Grant 6,537,371 - Vodakov , et al. March 25, 2 | 2003-03-25 |
| Low defect density silicon carbide Grant 6,534,026 - Vodakov , et al. March 18, 2 | 2003-03-18 |
| Apparatus for growing low defect density silicon carbide Grant 6,508,880 - Vodakov , et al. January 21, 2 | 2003-01-21 |
| Tantalum crucible fabrication and treatment App 20020083890 - Vodakov, Yury Alexandrovich ; et al. | 2002-07-04 |
| Method for growing single crystal silicon carbide App 20020083891 - Vodakov, Yury Alexandrovich ; et al. | 2002-07-04 |
| Niobium crucible fabrication and treatment App 20020059902 - Vodakov, Yury Alexandrovich ; et al. | 2002-05-23 |
| Low defect axially grown single crystal silicon carbide App 20020059901 - Vodakov, Yury Alexandrovich ; et al. | 2002-05-23 |
| Low defect density silicon carbide App 20020049129 - Vodakov, Yury Alexandrovich ; et al. | 2002-04-25 |
| Method for growing low defect density silicon carbide App 20020023581 - Vodakov, Yury Alexandrovich ; et al. | 2002-02-28 |
| Technique for growing silicon carbide monocrystals Grant 6,261,363 - Vodakov , et al. July 17, 2 | 2001-07-17 |
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