RAJAN; Siddharth

Patent Applications and Registrations

Patent applications and USPTO patent grants for RAJAN; Siddharth.The latest application filed is for "tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency".

Company Profile

2.10.17

RAJAN; Siddharth - Columbus OH
Rajan; Siddharth - Goleta CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Tunnel Junction Ultraviolet Light Emitting Diodes With Enhanced Light Extraction Efficiency App 20220059724 - RAJAN; Siddharth ; et al.	2022-02-24
Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency Grant 11,211,525 - Rajan , et al. December 28, 2	2021-12-28
Method Of Forming Lateral Pn Junctions In Iii-nitrides Using P-type And N-type Co-doping And Selective P-type Activation And Deactivation App 20210296449 - Rajan; Siddharth ; et al.	2021-09-23
Low Turn On And High Breakdown Voltage Lateral Diode App 20210296510 - Rahman; Mohammad Wahidur ; et al.	2021-09-23
Electronic devices with ultra-high dielectric constant passivation and high mobility materials Grant 11,081,555 - Rajan , et al. August 3, 2	2021-08-03
Dielectric Heterojunction Device App 20210126094 - Rajan; Siddharth ; et al.	2021-04-29
Tunnel Junction Ultraviolet Light Emitting Diodes With Enhanced Light Extraction Efficiency App 20200075809 - RAJAN; Siddharth ; et al.	2020-03-05
Dielectric Passivation for Electronic Devices App 20200006500 - Rajan; Siddharth ; et al.	2020-01-02
Ultraviolet Light Emitting Diodes With Tunnel Junction App 20180076354 - RAJAN; Siddharth ; et al.	2018-03-15
Enhancement Mode Field Effect Transistor With Doped Buffer And Drain Field Plate App 20170033187 - Rajan; Siddharth ; et al.	2017-02-02
Nanoscale emitters with polarization grading Grant 9,478,699 - Myers , et al. October 25, 2	2016-10-25
Heterostructure device and associated method Grant 8,697,506 - Tilak , et al. April 15, 2	2014-04-15
Nanoscale Emitters With Polarization Grading App 20130207075 - Myers; Roberto C. ; et al.	2013-08-15
Heterostructure Device And Associated Method App 20120171824 - Tilak; Vinayak ; et al.	2012-07-05
Heterostructure device and associated method Grant 8,159,002 - Tilak , et al. April 17, 2	2012-04-17
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor Grant 7,948,011 - Rajan , et al. May 24, 2	2011-05-24
N-face high electron mobility transistors with low buffer leakage and low parasitic resistance Grant 7,935,985 - Mishra , et al. May 3, 2	2011-05-03
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor App 20100264461 - Rajan; Siddharth ; et al.	2010-10-21
Heterostructure Device And Associated Method App 20090159929 - Tilak; Vinayak ; et al.	2009-06-25
Heterostructure Device And Associated Method App 20090140293 - Vertiatchikh; Alexei ; et al.	2009-06-04
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same Grant 7,525,130 - Mishra , et al. April 28, 2	2009-04-28
Method To Fabricate Iii-n Semiconductor Devices On The N-face Of Layers Which Are Grown In The Iii-face Direction Using Wafer Bonding And Substrate Removal App 20090085065 - Mishra; Umesh K. ; et al.	2009-04-02
N-face High Electron Mobility Transistors With Low Buffer Leakage And Low Parasitic Resistance App 20080237640 - Mishra; Umesh K. ; et al.	2008-10-02
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same App 20060231860 - Mishra; Umesh K. ; et al.	2006-10-19

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.