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Semiconductor devices and methods of forming the same
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Semiconductor processing system with in-situ electrical bias and methods thereof
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Semiconductor Processing Systems With In-situ Electrical Bias
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Semiconductor Devices And Methods Of Forming The Same
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Method of forming gate of semiconductor device and semiconductor device having same
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Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereof
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Method for tuning the effective work function of a metal
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Method Of Forming Gate Of Semiconductor Device And Semiconductor Device Having Same
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Method for Manufacturing A Dual Work Function Semiconductor Device and the Semiconductor Device Made Thereof
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Method for tuning the effective work function of a metal
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Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
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Method for manufacturing a dual work function semiconductor device
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Method For Manufacturing A Semiconductor Device Comprising Transistors Each Having A Different Effective Work Function
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Method For Manufacturing A Dual Work Function Semiconductor Device
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Method for fabricating a high-K dielectric layer
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Semiconductor structure including mixed rare earth oxide formed on silicon
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MOSFET devices and methods for making them
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Method For Manufacturing A Dual Work Function Semiconductor Device And The Semiconductor Device Made Thereof
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Semiconductor Structure Including Mixed Rare Earth Oxide Formed On Silicon
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Semiconductor structure including mixed rare earth oxide formed on silicon
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Atomic layer deposition method for depositing a layer
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Mosfet Devices And Methods For Making Them
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Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
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Semiconductor Structure Including Mixed Rare Earth Oxide Formed On Silicon
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Method for Controlled Formation of a Gate Dielectric Stack
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Method For Fabricating A High-k Dielectric Layer
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Method Of Reducing The Interfacial Oxide Thickness
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Semiconductor structure including mixed rare earth oxide formed on silicon
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Atomic layer deposition method for depositing a layer
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Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
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Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
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Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
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Method of forming lattice-matched structure on silicon and structure formed thereby
App 20050095815 - Bojarczuk, Nestor Alexander JR. ; et al. | 2005-05-05 |
Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
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Method of forming lattice-matched structure on silicon and structure formed thereby
Grant 6,852,575 - Bojarczuk, Jr. , et al. February 8, 2 | 2005-02-08 |
Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
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Method of forming lattice-matched structure on silicon and structure formed thereby
App 20030008520 - Bojarczuk, Nestor Alexander JR. ; et al. | 2003-01-09 |
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
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Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
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