loadpatents
name:-0.049839019775391
name:-0.10362100601196
name:-0.026973009109497
Radic; Ljubo Patent Filings

Radic; Ljubo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Radic; Ljubo.The latest application filed is for "laterally-diffused metal-oxide semiconductor transistor and method therefor".

Company Profile
22.32.30
  • Radic; Ljubo - Gilbert AZ
  • Radic; Ljubo - Torrance CA
  • Radic; Ljubo - Austin TX
  • Radic; Ljubo - Chandler AZ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Transistor formed with spacer
Grant 11,387,348 - Mehrotra , et al. July 12, 2
2022-07-12
Transistor with extended drain region
Grant 11,329,156 - Mehrotra , et al. May 10, 2
2022-05-10
Laterally-diffused Metal-oxide Semiconductor Transistor And Method Therefor
App 20220093752 - Mehrotra; Saumitra Raj ;   et al.
2022-03-24
Transistor with extended drain region
Grant 11,282,956 - Mehrotra , et al. March 22, 2
2022-03-22
Laterally-diffused metal-oxide semiconductor transistor and method therefor
Grant 11,227,921 - Mehrotra , et al. January 18, 2
2022-01-18
Trench with different transverse cross-sectional widths
Grant 11,217,675 - Mehrotra , et al. January 4, 2
2022-01-04
Trench With Different Transverse Cross-sectional Widths
App 20210305385 - Mehrotra; Saumitra Raj ;   et al.
2021-09-30
Transistor trench with field plate structure
Grant 11,075,110 - Mehrotra , et al. July 27, 2
2021-07-27
Transistor With Extended Drain Region
App 20210184034 - Mehrotra; Saumitra Raj ;   et al.
2021-06-17
Laterally-diffused Metal-oxide Semiconductor Transistor And Method Therefor
App 20210159319 - Mehrotra; Saumitra Raj ;   et al.
2021-05-27
Transistor Formed With Spacer
App 20210159323 - Mehrotra; Saumitra Raj ;   et al.
2021-05-27
Semiconductor device with a base link region and method therefor
Grant 11,018,247 - Radic , et al. May 25, 2
2021-05-25
Transistor Devices With Termination Regions
App 20210126125 - Grote; Bernhard ;   et al.
2021-04-29
Transistor devices with extended drain regions located in trench sidewalls
Grant 10,833,174 - Grote , et al. November 10, 2
2020-11-10
Transistor with gate/field plate structure
Grant 10,749,028 - Mehrotra , et al. A
2020-08-18
Vertical transistor with extended drain region
Grant 10,749,023 - Mehrotra , et al. A
2020-08-18
Transitor With Gate/field Plate Structure
App 20200176599 - MEHROTRA; SAUMITRA RAJ ;   et al.
2020-06-04
Transistor Devices With Extended Drain Regions Located In Trench Sidewalls
App 20200135896 - Grote; Bernhard ;   et al.
2020-04-30
Vertical Transistor With Extended Drain Region
App 20200135916 - MEHROTRA; Saumitra Raj ;   et al.
2020-04-30
Die with buried doped isolation region
Grant 10,607,880 - Mehrotra , et al.
2020-03-31
Transistor Devices With Control-terminal Field Plate Structures In Trenches
App 20200098912 - GROTE; BERNHARD ;   et al.
2020-03-26
Transistor trench structure with field plate structures
Grant 10,600,879 - Grote , et al.
2020-03-24
Field-effect transistor and method therefor
Grant 10,600,911 - Grote , et al.
2020-03-24
Die With Buried Doped Isolation Region
App 20200075393 - Mehrotra; Saumitra Raj ;   et al.
2020-03-05
Field-effect transistor and method therefor
Grant 10,522,677 - Mehrotra , et al. Dec
2019-12-31
Method of fabricating a power semiconductor device
Grant 10,483,359 - Henson , et al. Nov
2019-11-19
Termination design for trench superjunction power MOSFET
Grant 10,431,678 - Qin , et al. O
2019-10-01
Field-effect transistor and method therefor
Grant 10,424,646 - Mehrotra , et al. Sept
2019-09-24
Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers
Grant 10,418,483 - Grote , et al. Sept
2019-09-17
Transistor Trench Structure With Field Plate Structures
App 20190280094 - GROTE; BERNHARD ;   et al.
2019-09-12
Termination Design For Trench Superjunction Power MOSFET
App 20190148541 - Qin; Ganming ;   et al.
2019-05-16
Field-effect Transistor And Method Therefor
App 20190097046 - MEHROTRA; SAUMITRA RAJ ;   et al.
2019-03-28
Field-effect Transistor And Method Therefor
App 20190097003 - Mehrotra; Saumitra Raj ;   et al.
2019-03-28
Field-effect Transistor And Method Therefor
App 20190097045 - GROTE; BERNHARD ;   et al.
2019-03-28
Radio frequency coupling and transition structure
Grant 10,225,925 - Qiang , et al.
2019-03-05
Termination design for trench superjunction power MOSFET
Grant 10,103,257 - Qin , et al. October 16, 2
2018-10-16
Laterally Diffused Metal Oxide Semiconducting Devices With Lightly-doped Isolation Layers
App 20180151723 - Grote; Bernhard ;   et al.
2018-05-31
Method of Fabricating a Power Semiconductor Device
App 20170330942 - Henson; Timothy D. ;   et al.
2017-11-16
Semiconductor device with a field plate double trench having a thick bottom dielectric
Grant 9,735,241 - Henson , et al. August 15, 2
2017-08-15
Radio Frequency Coupling And Transition Structure
App 20170048969 - QIANG; LI ;   et al.
2017-02-16
Interface control in a bipolar junction transistor
Grant 9,437,717 - Chan , et al. September 6, 2
2016-09-06
Semiconductor device with a field plate trench having a thick bottom dielectric
Grant 9,299,793 - Henson , et al. March 29, 2
2016-03-29
Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
Grant 9,202,882 - Henson , et al. December 1, 2
2015-12-01
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
App 20150325685 - Henson; Timothy D. ;   et al.
2015-11-12
Semiconductor Device with a Thick Bottom Field Plate Trench Having a Single Dielectric and Angled Sidewalls
App 20140339670 - Henson; Timothy D. ;   et al.
2014-11-20
Semiconductor Device with a Field Plate Trench Having a Thick Bottom Dielectric
App 20140339669 - Henson; Timothy D. ;   et al.
2014-11-20
Semiconductor Device with a Field Plate Double Trench Having a Thick Bottom Dielectric
App 20140339651 - Henson; Timothy D. ;   et al.
2014-11-20
Semiconductor devices having reduced gate-drain capacitance
Grant 8,735,978 - Radic , et al. May 27, 2
2014-05-27
Interface Control In A Bipolar Junction Transistor
App 20130334664 - Chan; Kevin K. ;   et al.
2013-12-19
Interface control in a bipolar junction transistor
Grant 8,603,883 - Chan , et al. December 10, 2
2013-12-10
Semiconductor devices with enclosed void cavities
Grant 8,502,287 - Radic , et al. August 6, 2
2013-08-06
Interface Control In A Bipolar Junction Transistor
App 20130119436 - Chan; Kevin K. ;   et al.
2013-05-16
Semiconductor Devices Having Reduced Gate-drain Capacitance
App 20110147835 - Radic; Ljubo ;   et al.
2011-06-23
Methods for fabricating semiconductor devices having reduced gate-drain capacitance
Grant 7,919,388 - Radic , et al. April 5, 2
2011-04-05
Semiconductor Devices With Enclosed Void Cavities
App 20110024806 - Radic; Ljubo ;   et al.
2011-02-03
Enclosed void cavity for low dielectric constant insulator
Grant 7,838,389 - Radic , et al. November 23, 2
2010-11-23
Semiconductor Devices Having Reduced Gate-drain Capacitance And Methods For The Fabrication Thereof
App 20100084705 - Radic; Ljubo ;   et al.
2010-04-08
Enclosed Void Cavity For Low Dielectric Constant Insulator
App 20090294843 - Radic; Ljubo ;   et al.
2009-12-03

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed