loadpatents
name:-0.0032219886779785
name:-0.0085310935974121
name:-0.0037901401519775
Quinn; Robert M. Patent Filings

Quinn; Robert M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Quinn; Robert M..The latest application filed is for "abrupt channel doping profile for fermi threshold field effect transistors".

Company Profile
0.6.2
  • Quinn; Robert M. - Bristow VA
  • Quinn; Robert M. - South Burlington VT
  • Quinn; Robert M. - Burlington VT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Abrupt channel doping profile for fermi threshold field effect transistors
Grant 7,271,457 - Quinn September 18, 2
2007-09-18
Abrupt channel doping profile for fermi threshold field effect transistors
App 20060197121 - Quinn; Robert M.
2006-09-07
Method for manufacturing contacts for a Chalcogenide memory device
Grant 6,514,788 - Quinn February 4, 2
2003-02-04
Method for manufacturing contacts for a Chalcogenide memory device
App 20020182835 - Quinn, Robert M.
2002-12-05
Formation of variable-width sidewall structures
Grant 4,776,922 - Bhattacharyya , et al. October 11, 1
1988-10-11
Method for increasing the radiation resistance of charge storage semiconductor devices
Grant 4,506,436 - Bakeman, Jr. , et al. March 26, 1
1985-03-26
Method for forming IGFET devices having improved drain voltage characteristics
Grant 4,369,072 - Bakeman, Jr. , et al. January 18, 1
1983-01-18
High Performance Fet
Grant 3,814,992 - Kump , et al. June 4, 1
1974-06-04
Company Registrations

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