Qi; Jainhai

Patent Applications and Registrations

Patent applications and USPTO patent grants for Qi; Jainhai.The latest application filed is for "termination for trench mis device having implanted drain-drift region".

Company Profile

0.5.5

Qi; Jainhai - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Termination for trench MIS device Grant 7,795,675 - Darwish , et al. September 14, 2	2010-09-14
Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide Grant 7,435,650 - Darwish , et al. October 14, 2	2008-10-14
Trench MIS device having implanted drain-drift region and thick bottom oxide Grant 7,291,884 - Darwish , et al. November 6, 2	2007-11-06
Termination for trench MIS device having implanted drain-drift region Grant 7,268,032 - Darwish , et al. September 11, 2	2007-09-11
Termination for trench MIS device having implanted drain-drift region Grant 7,045,857 - Darwish , et al. May 16, 2	2006-05-16
Termination for trench MIS device having implanted drain-drift region App 20060019448 - Darwish; Mohamed N. ; et al.	2006-01-26
Termination for trench MIS device having implanted drain-drift region App 20060011976 - Darwish; Mohamed N. ; et al.	2006-01-19
Termination for trench MIS device having implanted drain-drift region App 20050215011 - Darwish, Mohamed N. ; et al.	2005-09-29
Process for manufacturing trench MIS device having implanted drain-drift region and thick botton oxide App 20040227182 - Darwish, Mohamed N. ; et al.	2004-11-18
Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same App 20040038467 - Darwish, Mohamed N. ; et al.	2004-02-26

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