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Patent applications and USPTO patent grants for Prosack, Jr.; Henry G..The latest application filed is for "system and method for improving cmos compatible non volatile memory retention reliability".
Patent | Date |
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Structure and method for post oxidation silicon trench bottom shaping Grant 8,624,302 - Ring , et al. January 7, 2 | 2014-01-07 |
System and method for improving CMOS compatible non volatile memory retention reliability Grant 8,198,708 - Bu , et al. June 12, 2 | 2012-06-12 |
System And Method For Improving Cmos Compatible Non Volatile Memory Retention Reliability App 20110215419 - Bu; Jiankang ;   et al. | 2011-09-08 |
Structure and Method for Post Oxidation Silicon Trench Bottom Shaping App 20110193142 - Ring; Matthew A. ;   et al. | 2011-08-11 |
System and method for improving CMOS compatible non volatile memory retention reliability Grant 7,910,420 - Bu , et al. March 22, 2 | 2011-03-22 |
System and method for using siliciding PECVD silicon nitride as a dielectric anti-reflective coating and hard mask Grant 7,884,023 - McCulloh , et al. February 8, 2 | 2011-02-08 |
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