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Patent applications and USPTO patent grants for Prenat; Guillaume.The latest application filed is for "non-volatile memory cell".
Patent | Date |
---|---|
Non-volatile memory cell Grant 9,508,433 - Prenat , et al. November 29, 2 | 2016-11-29 |
Reprogrammable logic device resistant to radiations Grant 9,437,260 - Prenat , et al. September 6, 2 | 2016-09-06 |
Volatile/non-volatile memory cell Grant 9,368,204 - Guillemenet , et al. June 14, 2 | 2016-06-14 |
Non-volatile Memory Cell App 20160055908 - PRENAT; Guillaume ;   et al. | 2016-02-25 |
Reprogrammable Logic Device Resistant To Radiations App 20150084671 - Prenat; Guillaume ;   et al. | 2015-03-26 |
Loadless Volatile/non-volatile Memory Cell App 20140078810 - Prenat; Guillaume ;   et al. | 2014-03-20 |
Volatile/non-volatile Memory Cell App 20140070844 - Guillemenet; Yoann ;   et al. | 2014-03-13 |
Magnetic random access memory devices including multi-bit cells Grant 8,576,615 - El Baraji , et al. November 5, 2 | 2013-11-05 |
Method for modeling a magnetic tunnel junction with spin-polarized current writing Grant 8,443,318 - Prenat , et al. May 14, 2 | 2013-05-14 |
Magnetic device for performing a logic function Grant 8,344,758 - Javerliac , et al. January 1, 2 | 2013-01-01 |
Magnetic Random Access Memory Devices Including Multi-Bit Cells App 20120314487 - El Baraji; Mourad ;   et al. | 2012-12-13 |
Magnetic Device For Performing A "logic Function" App 20110221470 - Javerliac; Virgile ;   et al. | 2011-09-15 |
Magnetic Device For Performing A Logic Function App 20110115522 - Javerliac; Virgile ;   et al. | 2011-05-19 |
Method for Modeling a Magnetic Tunnel Junction with Spin-Polarized Current Writing App 20110055794 - Prenat; Guillaume ;   et al. | 2011-03-03 |
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