| Patent | Date |
|---|
Semiconductor structure having group III-V device on group IV substrate
Grant 11,349,280 - Preisler , et al. May 31, 2 | 2022-05-31 |
Semiconductor structure having group III-V chiplet on group IV substrate and cavity in proximity to heating element
Grant 11,296,482 - Preisler , et al. April 5, 2 | 2022-04-05 |
Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing
Grant 11,276,682 - Sinha , et al. March 15, 2 | 2022-03-15 |
Germanium on insulator for CMOS imagers in the short wave infrared
Grant 11,271,028 - Levy , et al. March 8, 2 | 2022-03-08 |
Method of Manufacturing Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Devices Using Nickel Silicide
App 20220068914 - Sinha; Mantavya ; et al. | 2022-03-03 |
Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Device
App 20220068913 - Sinha; Mantavya ; et al. | 2022-03-03 |
Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Device and Method of Manufacturing
App 20220068911 - Sinha; Mantavya ; et al. | 2022-03-03 |
Method of Manufacturing Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS)
App 20220068912 - Sinha; Mantavya ; et al. | 2022-03-03 |
Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners
Grant 11,233,159 - Preisler , et al. January 25, 2 | 2022-01-25 |
Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices
Grant 11,195,920 - Hurwitz , et al. December 7, 2 | 2021-12-07 |
Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices
App 20210375618 - Hurwitz; Paul D. ; et al. | 2021-12-02 |
Semiconductor structure having porous semiconductor layer for RF devices
Grant 11,164,740 - Hurwitz , et al. November 2, 2 | 2021-11-02 |
Anode up--cathode down silicon and germanium photodiode
Grant 11,081,610 - Zhu , et al. August 3, 2 | 2021-08-03 |
Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Liner Stacks
App 20210217903 - Preisler; Edward ; et al. | 2021-07-15 |
Group III-V Device on Group IV Substrate Using Contacts with Precursor Stacks
App 20210217922 - Preisler; Edward ; et al. | 2021-07-15 |
Structure and Method for Process Control Monitoring for Group III-V Devices Integrated with Group IV Substrate
App 20210217908 - Preisler; Edward | 2021-07-15 |
Fabrication of Semiconductor Structure Having Group III-V Device on Group IV Substrate with Separately Formed Contacts Using Different Metal Liners
App 20210217904 - Preisler; Edward ; et al. | 2021-07-15 |
Semiconductor Structure Having Group III-V Chiplet on Group IV Substrate and Cavity in Proximity to Heating Element
App 20210218225 - Preisler; Edward ; et al. | 2021-07-15 |
Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Precursor Stacks
App 20210217921 - Preisler; Edward ; et al. | 2021-07-15 |
Semiconductor Structure Having Group III-V Device on Group IV Substrate
App 20210218219 - Preisler; Edward ; et al. | 2021-07-15 |
Integrated optical/electrical probe card for testing optical, electrical, and optoelectronic devices in a semiconductor die
Grant 10,996,081 - Qamar , et al. May 4, 2 | 2021-05-04 |
Semiconductor Structure Having Porous Semiconductor Layer for RF Devices
App 20210111019 - Hurwitz; Paul D. ; et al. | 2021-04-15 |
Semiconductor Structure Having Porous Semiconductor Segment for RF Devices and Bulk Semiconductor Region for Non-RF Devices
App 20210111249 - Hurwitz; Paul D. ; et al. | 2021-04-15 |
Method for fabrication of germanium photodiode with silicon cap
Grant 10,892,374 - Zhu , et al. January 12, 2 | 2021-01-12 |
Germanium photodiode with silicon cap
Grant 10,892,373 - Zhu , et al. January 12, 2 | 2021-01-12 |
Germanium On Insulator For Cmos Imagers In The Short Wave Infrared
App 20200365630 - Levy; Uriel ; et al. | 2020-11-19 |
Method for Fabrication of Germanium Photodiode with Silicon Cap
App 20200295220 - Zhu; Difeng ; et al. | 2020-09-17 |
Germanium Photodiode with Silicon Cap
App 20200259036 - A1 | 2020-08-13 |
Anode Up - Cathode Down Silicon and Germanium Photodiode
App 20200259037 - A1 | 2020-08-13 |
Silicon-on-insulator (SOI) die including a light emitting layer pedestal-aligned with a light receiving segment
Grant 10,649,137 - Preisler , et al. | 2020-05-12 |
BiCMOS integration using a shared SiGe layer
Grant 10,297,591 - Preisler , et al. | 2019-05-21 |
BiCMOS integration with reduced masking steps
Grant 10,290,630 - Preisler , et al. | 2019-05-14 |
Ultra-broadband transimpedance amplifiers (tia) for optical fiber communications
Grant 10,243,523 - Heydari , et al. | 2019-03-26 |
Ultra-broadband Transimpedance Amplifiers (tia) For Optical Fiber Communications
App 20180102749 - Heydari; Payam ; et al. | 2018-04-12 |
Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technology
Grant 9,941,353 - Hurwitz , et al. April 10, 2 | 2018-04-10 |
Structure and Method for Mitigating Substrate Parasitics in Bulk High Resistivity Substrate Technology
App 20170338305 - Hurwitz; Paul D. ; et al. | 2017-11-23 |
Efficient fabrication of BiCMOS devices
Grant 9,673,191 - Preisler , et al. June 6, 2 | 2017-06-06 |
Isolated through silicon via and isolated deep silicon via having total or partial isolation
Grant 9,673,081 - Jebory , et al. June 6, 2 | 2017-06-06 |
Low-cost complementary BiCMOS integration scheme
Grant 9,640,528 - Preisler , et al. May 2, 2 | 2017-05-02 |
Isolated through silicon vias in RF technologies
Grant 9,577,035 - Hurwitz , et al. February 21, 2 | 2017-02-21 |
Semiconductor fabrication utilizing grating and trim masks
Grant 9,436,092 - Talor , et al. September 6, 2 | 2016-09-06 |
Heterojunction bipolar transistor having a germanium raised extrinsic base
Grant 9,209,264 - Preisler , et al. December 8, 2 | 2015-12-08 |
BiCMOS Integration with Reduced Masking Steps
App 20150303188 - Preisler; Edward ; et al. | 2015-10-22 |
Efficient Fabrication of BiCMOS Devices
App 20150303186 - Preisler; Edward ; et al. | 2015-10-22 |
Low-Cost Complementary BiCMOS Integration Scheme
App 20150303185 - Preisler; Edward ; et al. | 2015-10-22 |
BiCMOS Integration Using a Shared SiGe Layer
App 20150303187 - Preisler; Edward ; et al. | 2015-10-22 |
Heterojunction bipolar transistor having a germanium extrinsic base utilizing a sacrificial emitter post
Grant 9,064,886 - Preisler , et al. June 23, 2 | 2015-06-23 |
Heterojunction Bipolar Transistor having a Germanium Extrinsic Base Utilizing a Sacrificial Emitter Post
App 20140264458 - Preisler; Edward ; et al. | 2014-09-18 |
Heterojunction Bipolar Transistor having a Germanium Raised Extrinsic Base
App 20140264457 - Preisler; Edward ; et al. | 2014-09-18 |
Isolated Through Silicon Vias in RF Technologies
App 20140054743 - Hurwitz; Paul D. ; et al. | 2014-02-27 |
Isolated Through Silicon Via and Isolated Deep Silicon Via Having Total or Partial Isolation
App 20130313682 - Jebory; Hadi ; et al. | 2013-11-28 |
Semiconductor Fabrication Utilizing Grating and Trim Masks
App 20130256844 - Talor; George ; et al. | 2013-10-03 |
Method for integrating high voltage and high speed bipolar transistors on a substrate and related structure
Grant 7,968,417 - Preisler June 28, 2 | 2011-06-28 |
Method for integrating high voltage and high speed bipolar transistors on a substrate and related structure
App 20090085066 - Preisler; Edward | 2009-04-02 |
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