| Patent | Date |
|---|
Group III Nitride-Based Transistor Device
App 20220271147 - Ostermaier; Clemens ; et al. | 2022-08-25 |
Enhancement mode Group III nitride-based transistor device
Grant 11,417,758 - Prechtl , et al. August 16, 2 | 2022-08-16 |
Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device
Grant 11,349,012 - Ostermaier , et al. May 31, 2 | 2022-05-31 |
High Electron Mobility Transistor with Doped Semiconductor Region in Gate Structure
App 20220123138 - Detzel; Thomas ; et al. | 2022-04-21 |
High electron mobility transistor with doped semiconductor region in gate structure
Grant 11,257,941 - Detzel , et al. February 22, 2 | 2022-02-22 |
High-electron-mobility transistor having a buried field plate
Grant 11,114,554 - Prechtl , et al. September 7, 2 | 2021-09-07 |
High Electron Mobility Transistor with Doped Semiconductor Region in Gate Structure
App 20210234028 - Detzel; Thomas ; et al. | 2021-07-29 |
Enhancement Mode Group III Nitride-Based Transistor Device
App 20210050439 - Prechtl; Gerhard ; et al. | 2021-02-18 |
Integrated Circuit and Bipolar Transistor
App 20210050434 - Prechtl; Gerhard ; et al. | 2021-02-18 |
Group III Nitride-Based Transistor Device and Method of Fabricating a Gate Structure for a Group III Nitride-Based Transistor Device
App 20200321447 - Ostermaier; Clemens ; et al. | 2020-10-08 |
Semiconductor device
Grant 10,600,710 - Prechtl , et al. | 2020-03-24 |
Method for producing an integrated heterojunction semiconductor device
Grant 10,573,568 - Prechtl , et al. Feb | 2020-02-25 |
Semiconductor Device Having a Bidirectional Switch and Discharge Circuit
App 20190326280 - Imam; Mohamed ; et al. | 2019-10-24 |
System and method for depletion mode and enhancement mode transistors
Grant 10,411,008 - Prechtl , et al. Sept | 2019-09-10 |
Methods of forming substrate structures and semiconductor components
Grant 10,388,736 - Prechtl , et al. A | 2019-08-20 |
Active gate-source capacitance clamp for normally-off HEMT
Grant 10,326,441 - Prechtl , et al. | 2019-06-18 |
Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage
Grant 10,304,923 - Ostermaier , et al. | 2019-05-28 |
Sloped field plate and contact structures for semiconductor devices and methods of manufacturing thereof
Grant 10,276,669 - Heinle , et al. | 2019-04-30 |
Semiconductor Device
App 20190096779 - Prechtl; Gerhard ; et al. | 2019-03-28 |
Semiconductor wafer and method
Grant 10,199,216 - Ostermaier , et al. Fe | 2019-02-05 |
Semiconductor device
Grant 10,177,061 - Prechtl , et al. J | 2019-01-08 |
Semiconductor Probe Test Card with Integrated Hall Measurement Features
App 20180328981 - Ostermaier; Clemens ; et al. | 2018-11-15 |
Method of Forming a Vertical Potential Short in a Periphery Region of a III-Nitride Stack for Preventing Lateral Leakage
App 20180331175 - Ostermaier; Clemens ; et al. | 2018-11-15 |
Semiconductor probe test card with integrated hall measurement features
Grant 10,126,355 - Ostermaier , et al. November 13, 2 | 2018-11-13 |
Non-planar normally off compound semiconductor device
Grant 10,090,406 - Prechtl , et al. October 2, 2 | 2018-10-02 |
Interdigit device on leadframe for evenly distributed current flow
Grant 10,074,597 - Cho , et al. September 11, 2 | 2018-09-11 |
Lead frame connected with heterojunction semiconductor body
Grant 10,068,780 - Prechtl , et al. September 4, 2 | 2018-09-04 |
Water and ion barrier for the periphery of III-V semiconductor dies
Grant 10,062,630 - Prechtl , et al. August 28, 2 | 2018-08-28 |
Bidirectional Normally-Off III-V Devices and Circuits
App 20180219008 - Prechtl; Gerhard ; et al. | 2018-08-02 |
High electron mobility transistor with carrier injection mitigation gate structure
Grant 10,038,085 - Curatola , et al. July 31, 2 | 2018-07-31 |
Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage
Grant 10,038,051 - Ostermaier , et al. July 31, 2 | 2018-07-31 |
Interdigit Device On Leadframe For Evenly Distributed Current Flow
App 20180211904 - Cho; Eung San ; et al. | 2018-07-26 |
Sloped Field Plate and Contact Structures for Semiconductor Devices and Methods of Manufacturing Thereof
App 20180204915 - Heinle; Jens Ulrich ; et al. | 2018-07-19 |
Active Gate-Source Capacitance Clamp for Normally-Off HEMT
App 20180159528 - Prechtl; Gerhard ; et al. | 2018-06-07 |
Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits
Grant 9,960,157 - Prechtl , et al. May 1, 2 | 2018-05-01 |
Active gate-source capacitance clamp for normally-off HEMT
Grant 9,917,578 - Prechtl , et al. March 13, 2 | 2018-03-13 |
Methods of Forming Substrate Structures and Semiconductor Components
App 20180047813 - Prechtl; Gerhard ; et al. | 2018-02-15 |
Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device
Grant 9,887,139 - Prechtl , et al. February 6, 2 | 2018-02-06 |
High-Electron-Mobility Transistor Having a Buried Field Plate
App 20170365702 - Prechtl; Gerhard ; et al. | 2017-12-21 |
Method for Producing an Integrated Heterojunction Semiconductor Device
App 20170365520 - Prechtl; Gerhard ; et al. | 2017-12-21 |
Semiconductor device
Grant 9,847,394 - Prechtl , et al. December 19, 2 | 2017-12-19 |
III-nitride bidirectional device
Grant 9,837,522 - Prechtl , et al. December 5, 2 | 2017-12-05 |
Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
Grant 9,837,520 - Ostermaier , et al. December 5, 2 | 2017-12-05 |
Substrate Structure, Semiconductor Component And Method
App 20170271454 - Prechtl; Gerhard ; et al. | 2017-09-21 |
Substrate structure, semiconductor component and method
Grant 9,768,258 - Prechtl , et al. September 19, 2 | 2017-09-19 |
Active Gate-Source Capacitance Clamp for Normally-Off HEMT
App 20170244407 - Prechtl; Gerhard ; et al. | 2017-08-24 |
Vertical Potential Short in the Periphery Region of a III-Nitride Stack for Preventing Lateral Leakage
App 20170243936 - Ostermaier; Clemens ; et al. | 2017-08-24 |
High-electron-mobility transistor having a buried field plate
Grant 9,728,630 - Prechtl , et al. August 8, 2 | 2017-08-08 |
High Electron Mobility Transistor with Carrier Injection Mitigation Gate Structure
App 20170200817 - Curatola; Gilberto ; et al. | 2017-07-13 |
Water and Ion Barrier for the Periphery of III-V Semiconductor Dies
App 20170194230 - Prechtl; Gerhard ; et al. | 2017-07-06 |
Semiconductor wafer and method
App 20170186600 - Ostermaier; Clemens ; et al. | 2017-06-29 |
Contact structures for compound semiconductor devices
Grant 9,666,705 - Prechtl , et al. May 30, 2 | 2017-05-30 |
Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
Grant 9,647,104 - Ostermaier , et al. May 9, 2 | 2017-05-09 |
III-Nitride Bidirectional Device
App 20170125562 - Prechtl; Gerhard ; et al. | 2017-05-04 |
Bidirectional Normally-Off Devices and Circuits
App 20170110448 - Prechtl; Gerhard ; et al. | 2017-04-20 |
Semiconductor Device
App 20170104076 - Prechtl; Gerhard ; et al. | 2017-04-13 |
Switch Circuit, Semiconductor Device and Method
App 20170103978 - Prechtl; Gerhard ; et al. | 2017-04-13 |
Electronic component
Grant 9,620,467 - Haeberlen , et al. April 11, 2 | 2017-04-11 |
Water and Ion Barrier for III-V Semiconductor Devices
App 20170092753 - Prechtl; Gerhard ; et al. | 2017-03-30 |
Electronic device
Grant 9,590,048 - Prechtl , et al. March 7, 2 | 2017-03-07 |
Field effect power transistor metalization having a comb structure with contact fingers
Grant 9,570,565 - Prechtl February 14, 2 | 2017-02-14 |
Semiconductor Component and Manufacturing Method Therefor
App 20170025523 - Prechtl; Gerhard ; et al. | 2017-01-26 |
Semiconductor device and method
Grant 9,553,155 - Strassburg , et al. January 24, 2 | 2017-01-24 |
Surface treatment of semiconductor substrate using free radical state fluorine particles
Grant 9,515,162 - Reiner , et al. December 6, 2 | 2016-12-06 |
Semiconductor device and method
Grant 9,450,063 - Prechtl September 20, 2 | 2016-09-20 |
Field Effect Power Transistor Metalization Having a Comb Structure with Contact Fingers
App 20160268386 - Prechtl; Gerhard | 2016-09-15 |
Surface Treatment Of Semiconductor Substrate Using Free Radical State Fluorine Particles
App 20160260817 - Reiner; Maria ; et al. | 2016-09-08 |
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure
App 20160247905 - Ostermaier; Clemens ; et al. | 2016-08-25 |
Semiconductor Device
App 20160240645 - Prechtl; Gerhard ; et al. | 2016-08-18 |
Method of manufacturing HEMTs with an integrated Schottky diode
Grant 9,412,834 - Prechtl , et al. August 9, 2 | 2016-08-09 |
Semiconductor Device And Method
App 20160225864 - Strassburg; Matthias ; et al. | 2016-08-04 |
III-Nitride Device Having a Buried Insulating Region
App 20160155834 - Ostermaier; Clemens ; et al. | 2016-06-02 |
Metalization of a field effect power transistor
Grant 9,356,118 - Prechtl May 31, 2 | 2016-05-31 |
Method of manufacturing a multi-channel HEMT
Grant 9,349,829 - Ostermaier , et al. May 24, 2 | 2016-05-24 |
Group III-nitride-based enhancement mode transistor
Grant 9,337,279 - Ostermaier , et al. May 10, 2 | 2016-05-10 |
Electronic Component
App 20160086897 - Haeberlen; Oliver ; et al. | 2016-03-24 |
Non-Planar Normally Off Compound Semiconductor Device
App 20160087089 - Prechtl; Gerhard ; et al. | 2016-03-24 |
Metalization of a Field Effect Power Transistor
App 20160087074 - Prechtl; Gerhard | 2016-03-24 |
High-Electron-Mobility Transistor Having a Buried Field Plate
App 20160071967 - Prechtl; Gerhard ; et al. | 2016-03-10 |
Enhancement mode device
Grant 9,281,413 - Strassburg , et al. March 8, 2 | 2016-03-08 |
Method of manufacturing a high breakdown voltage III-nitride device
Grant 9,263,545 - Ostermaier , et al. February 16, 2 | 2016-02-16 |
Method of Manufacturing a High Breakdown Voltage III-Nitride Device
App 20150311312 - Ostermaier; Clemens ; et al. | 2015-10-29 |
High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode
Grant 9,142,550 - Prechtl , et al. September 22, 2 | 2015-09-22 |
Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure
App 20150255590 - Ostermaier; Clemens ; et al. | 2015-09-10 |
Group III-Nitride-Based Enhancement Mode Transistor
App 20150249134 - Ostermaier; Clemens ; et al. | 2015-09-03 |
Method Of Manufacturing A Multi-channel Hemt
App 20150221748 - Ostermaier; Clemens ; et al. | 2015-08-06 |
Enhancement Mode Device
App 20150214352 - Strassburg; Matthias ; et al. | 2015-07-30 |
High breakdown voltage III-nitride device
Grant 9,076,763 - Ostermaier , et al. July 7, 2 | 2015-07-07 |
Group III-nitride-based enhancement mode transistor
Grant 9,048,303 - Ostermaier , et al. June 2, 2 | 2015-06-02 |
Multi-channel HEMT
Grant 9,035,355 - Ostermaier , et al. May 19, 2 | 2015-05-19 |
Electronic Device
App 20150115326 - Prechtl; Gerhard ; et al. | 2015-04-30 |
Semiconductor Device And Method
App 20150104911 - Prechtl; Gerhard | 2015-04-16 |
Semiconductor device and method
Grant 8,941,148 - Prechtl January 27, 2 | 2015-01-27 |
Method of Manufacturing HEMTs with an Integrated Schottky Diode
App 20150011058 - Prechtl; Gerhard ; et al. | 2015-01-08 |
High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode
App 20140367700 - Prechtl; Gerhard ; et al. | 2014-12-18 |
Integrated Schottky diode for HEMTs
Grant 8,872,235 - Prechtl , et al. October 28, 2 | 2014-10-28 |
Semiconductor Device and Method for Manufacturing a Semiconductor Device
App 20140210052 - Prechtl; Gerhard ; et al. | 2014-07-31 |
Method of contacting a doping region in a semiconductor substrate
Grant 8,735,289 - Prechtl , et al. May 27, 2 | 2014-05-27 |
High Breakdown Voltage III-Nitride Device
App 20140042448 - Ostermaier; Clemens ; et al. | 2014-02-13 |
Multi-Channel HEMT
App 20130334573 - Ostermaier; Clemens ; et al. | 2013-12-19 |
Contact Structures for Compound Semiconductor Devices
App 20130299842 - Prechtl; Gerhard ; et al. | 2013-11-14 |
Semiconductor Device And Method
App 20130234146 - Prechtl; Gerhard | 2013-09-12 |
Integrated Schottky Diode for HEMTs
App 20130221363 - Prechtl; Gerhard ; et al. | 2013-08-29 |
Integrated Heterojunction Semiconductor Device and Method for Producing an Integrated Heterojunction Semiconductor Device
App 20130168737 - Prechtl; Gerhard ; et al. | 2013-07-04 |
Integrated circuit with ESD structure
Grant 8,368,177 - Meiser , et al. February 5, 2 | 2013-02-05 |
Semiconductor Device and Method for Manufacturing a Semiconductor Device
App 20120133024 - Prechtl; Gerhard ; et al. | 2012-05-31 |
Integrated Circuit With Esd Structure
App 20110089532 - Meiser; Andreas Peter ; et al. | 2011-04-21 |
Integrated circuit with bipolar transistor
Grant 7,692,268 - Prechtl , et al. April 6, 2 | 2010-04-06 |
Gemstone
Grant D609,598 - Prechtl February 9, 2 | 2010-02-09 |
Gemstone
Grant D605,548 - Prechtl December 8, 2 | 2009-12-08 |
Integrated Circuit With Bipolar Transistor
App 20080023794 - Prechtl; Gerhard ; et al. | 2008-01-31 |
Artificial gemstone, natural gemstone ornamental object made of glass
Grant D560,542 - Prechtl January 29, 2 | 2008-01-29 |
Artificial gemstone, natural gemstone ornamental object made of glass
Grant D549,610 - Prechtl August 28, 2 | 2007-08-28 |
Artificial gemstone, natural gemstone ornamental object made of glass
Grant D544,392 - Prechtl June 12, 2 | 2007-06-12 |
Artificial gemstone, natural gemstone ornamental object made of glass
Grant D543,892 - Prechtl June 5, 2 | 2007-06-05 |
Compensation frame for receiving a substrate
App 20050016468 - Ruhl, Guenther ; et al. | 2005-01-27 |
Process for the ALD coating of substrates and apparatus suitable for carrying out the process
App 20040216670 - Gutsche, Martin ; et al. | 2004-11-04 |
Component for vehicle interiors
Grant 6,022,623 - Clerici , et al. February 8, 2 | 2000-02-08 |
| 