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name:-0.024224996566772
name:-0.011430978775024
name:-0.0035200119018555
Pourtois; Geoffrey Patent Filings

Pourtois; Geoffrey

Patent Applications and Registrations

Patent applications and USPTO patent grants for Pourtois; Geoffrey.The latest application filed is for "semiconductor fin structure and method of fabricating the same".

Company Profile
3.10.13
  • Pourtois; Geoffrey - Villers-la-Ville BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor fin structure and method of fabricating the same
Grant 11,387,350 - Eneman , et al. July 12, 2
2022-07-12
Semiconductor Fin Structure And Method Of Fabricating The Same
App 20200212205 - Eneman; Geert ;   et al.
2020-07-02
Method Of Manufacturing A Magnetic Memory Device Having Buffer Layer
App 20190067564 - Swerts; Johan ;   et al.
2019-02-28
Semiconductors with increased carrier concentration
Grant 10,128,338 - Yu , et al. November 13, 2
2018-11-13
Magnetic memory device having buffer layer
Grant 10,050,192 - Swerts , et al. August 14, 2
2018-08-14
Method for transfering a graphene layer
Grant 9,982,360 - Huyghebaert , et al. May 29, 2
2018-05-29
Spin torque majority gate device
Grant 9,979,402 - Vaysset , et al. May 22, 2
2018-05-22
Semiconductors With Increased Carrier Concentration
App 20180108734 - Yu; Hao ;   et al.
2018-04-19
Two-dimensional material semiconductor device
Grant 9,899,501 - Pourtois , et al. February 20, 2
2018-02-20
Spin Torque Majority Gate Device
App 20170302280 - Vaysset; Adrien ;   et al.
2017-10-19
Two-dimensional Material Semiconductor Device
App 20170179263 - Pourtois; Geoffrey ;   et al.
2017-06-22
Magnetic Memory Device Having Buffer Layer
App 20170170390 - Swerts; Johan ;   et al.
2017-06-15
Heterosection tunnel field-effect transistor (TFET)
Grant 9,608,094 - Verhulst , et al. March 28, 2
2017-03-28
Method of producing a III-V fin structure
Grant 9,431,519 - Minari , et al. August 30, 2
2016-08-30
Spin transfer torque magnetic memory device
Grant 9,281,040 - Soree , et al. March 8, 2
2016-03-08
Heterosection Tunnel Field-effect Transistor (tfet)
App 20160064535 - Verhulst; Anne S. ;   et al.
2016-03-03
Method of Producing a III-V Fin Structure
App 20150340503 - Minari; Hideki ;   et al.
2015-11-26
Method For Transfering A Graphene Layer
App 20150079399 - Huyghebaert; Cedric ;   et al.
2015-03-19
Spin Transfer Torque Magnetic Memory Device
App 20140160835 - Soree; Bart ;   et al.
2014-06-12
Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof
Grant 8,232,581 - Pourtois , et al. July 31, 2
2012-07-31
Method for Manufacturing an III-V Engineered Substrate and the III-V Engineered Substrate Thereof
App 20100327316 - Pourtois; Geoffrey ;   et al.
2010-12-30
Dual Work Function Device With Stressor Layer And Method For Manufacturing The Same
App 20090174003 - Chang; Shou-Zen ;   et al.
2009-07-09
Method for Modulating the Effective Work Function
App 20070272967 - Pantisano; Luigi ;   et al.
2007-11-29

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