Patent | Date |
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Penetrating implant for forming a semiconductor device Grant 8,741,720 - Curello , et al. June 3, 2 | 2014-06-03 |
Penetrating Implant For Forming A Semiconductor Device App 20130224926 - Curello; Giuseppe ;   et al. | 2013-08-29 |
Penetrating implant for forming a semiconductor device Grant 8,426,927 - Curello , et al. April 23, 2 | 2013-04-23 |
Selective spacer formation on transistors of different classes on the same device Grant 8,174,060 - Curello , et al. May 8, 2 | 2012-05-08 |
Selective spacer formation on transistors of different classes on the same device Grant 8,154,067 - Curello , et al. April 10, 2 | 2012-04-10 |
Penetrating Implant For Forming A Semiconductor Device App 20110215422 - Curello; Giuseppe ;   et al. | 2011-09-08 |
Selective Spacer Formation On Transistors Of Different Classes On The Same Device App 20110157854 - Curello; Giuseppe ;   et al. | 2011-06-30 |
Penetrating implant for forming a semiconductor device Grant 7,943,468 - Curello , et al. May 17, 2 | 2011-05-17 |
Penetrating Implant For Forming A Semiconductor Device App 20090242998 - Curello; Giuseppe ;   et al. | 2009-10-01 |
Selective Spacer Formation On Transistors Of Different Classes On The Same Device App 20090189193 - CURELLO; GIUSEPPE ;   et al. | 2009-07-30 |
Active region spacer for semiconductor devices and method to form the same Grant 7,560,780 - Curello , et al. July 14, 2 | 2009-07-14 |
Selective spacer formation on transistors of different classes on the same device Grant 7,541,239 - Curello , et al. June 2, 2 | 2009-06-02 |
Selective spacer formation on transistors of different classes on the same device App 20080003746 - Curello; Giuseppe ;   et al. | 2008-01-03 |
Active region spacer for semiconductor devices and method to form the same App 20070132057 - Curello; Giuseppe ;   et al. | 2007-06-14 |
Indium-boron dual halo MOSFET Grant 7,226,843 - Weber , et al. June 5, 2 | 2007-06-05 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Grant 6,979,609 - Post , et al. December 27, 2 | 2005-12-27 |
Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operation Grant 6,803,285 - Mistry , et al. October 12, 2 | 2004-10-12 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Grant 6,717,221 - Post , et al. April 6, 2 | 2004-04-06 |
Indium-boron dual halo MOSFET App 20040061187 - Weber, Cory E. ;   et al. | 2004-04-01 |
Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation Grant 6,693,331 - Mistry , et al. February 17, 2 | 2004-02-17 |
Method of fabricating mosfet transistors with multiple threshold voltages by halo compensation and masks App 20030203579 - Post, Ian R. ;   et al. | 2003-10-30 |
Method of fabricating mosfet transistors with multiple threshold voltages by halo compensation and masks App 20030190779 - Post, Ian R. ;   et al. | 2003-10-09 |
Thin tensile layers in shallow trench isolation and method of making same Grant 6,627,506 - Kuhn , et al. September 30, 2 | 2003-09-30 |
Method Of Fabricating Mosfet Transistors With Multiple Threshold Voltages By Halo Compensation And Masks App 20030122198 - Post, Ian R. ;   et al. | 2003-07-03 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Grant 6,586,294 - Post , et al. July 1, 2 | 2003-07-01 |
Method of fabricating dual threshold voltage n-channel and p-channel MOSFETs with a single extra masked implant operation App 20030119248 - Mistry, Kaizad R. ;   et al. | 2003-06-26 |
Method Of Fabricating Dual Threshold Voltage N-channel And P-channel Mosfets With A Single Extra Masked Implant Operation App 20030094659 - MISTRY, KAIZAD R. ;   et al. | 2003-05-22 |
Thin tensile layers in shallow trench isolation and method of making same App 20020045325 - Kuhn, Kelin J. ;   et al. | 2002-04-18 |
Thin tensile layers in shallow trench isolation and method of making same Grant 6,368,931 - Kuhn , et al. | 2002-04-09 |