Porowski; Sylwester
Patent Applications and Registrations
Patent applications and USPTO patent grants for Porowski; Sylwester.The latest application filed is for "substrate for surface enhanced raman scattering studies".
- Porowski; Sylwester - Warsaw N/A PL
| Patent | Date |
|---|---|
| Substrate for surface enhanced raman scattering studies Grant 8,531,660 - Dziecielewski , et al. September 10, 2 | 2013-09-10 |
| Substrate For Surface Enhanced Raman Scattering Studies App 20110235031 - Dziecielewski; Igor ; et al. | 2011-09-29 |
| Nitride based laser diode and method of manufacturing nitride based laser diode Grant 7,936,798 - Skierbiszewski , et al. May 3, 2 | 2011-05-03 |
| Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN Grant 6,399,500 - Porowski , et al. June 4, 2 | 2002-06-04 |
| Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity Grant 6,329,215 - Porowski , et al. December 11, 2 | 2001-12-11 |
| Method of fabrication of highly resistive GaN bulk crystals Grant 6,273,948 - Porowski , et al. August 14, 2 | 2001-08-14 |
| Method of making a crystalline multilayer structure at two pressures the second one lower than first Grant 5,637,531 - Porowski , et al. June 10, 1 | 1997-06-10 |
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