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Multi-mode Ionization Apparatus And Uses Thereof
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Enhancement-mode HFET circuit arrangement having high power and a high threshold voltage
Grant 8,963,209 - Xin , et al. February 24, 2 | 2015-02-24 |
Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes
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LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
App 20130328060 - Liu; LinLin ; et al. | 2013-12-12 |
Layout design for a high power, GaN-based FET having interdigitated electrodes
Grant 8,530,903 - Liu , et al. September 10, 2 | 2013-09-10 |
Enhancement-mode Hfet Circuit Arrangement Having High Power And A High Threshold Voltage
App 20130146891 - XIN; Xiaobin ; et al. | 2013-06-13 |
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
App 20130043487 - Liu; LinLin ; et al. | 2013-02-21 |
Enhancement-mode HFET circuit arrangement having high power and high threshold voltage
Grant 8,368,121 - Xin , et al. February 5, 2 | 2013-02-05 |
Layout design for a high power, GaN-based FET
Grant 8,319,256 - Liu , et al. November 27, 2 | 2012-11-27 |
Termination and Contact Structures for a High Voltage Gan-Based Heterojunction Transistor
App 20120238063 - Murphy; Michael ; et al. | 2012-09-20 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor
Grant 8,169,003 - Murphy , et al. May 1, 2 | 2012-05-01 |
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
App 20110316045 - LIU; Linlin ; et al. | 2011-12-29 |
Enhancement-mode Hfet Circuit Arrangement Having High Power And A High Threshold Voltage
App 20110309372 - XIN; Xiaobin ; et al. | 2011-12-22 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor
Grant 7,939,853 - Murphy , et al. May 10, 2 | 2011-05-10 |
Gallium nitride semiconductor
App 20110101371 - Zhu; TingGang ; et al. | 2011-05-05 |
Gallium nitride semiconductor device
Grant 7,863,172 - Zhu , et al. January 4, 2 | 2011-01-04 |
High voltage GaN-based heterojunction transistor structure and method of forming same
App 20090321787 - Murphy; Michael ; et al. | 2009-12-31 |
Gallium Nitride Semiconductor Device
App 20090035925 - Zhu; TingGang ; et al. | 2009-02-05 |
Gallium nitride semiconductor device
Grant 7,436,039 - Zhu , et al. October 14, 2 | 2008-10-14 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor
App 20080230785 - Murphy; Michael ; et al. | 2008-09-25 |
Low doped layer for nitride-based semiconductor device
Grant 7,253,015 - Pophristic , et al. August 7, 2 | 2007-08-07 |
Non-activated guard ring for semiconductor devices
Grant 7,229,866 - Zhu , et al. June 12, 2 | 2007-06-12 |
Vertical structure semiconductor devices and method of fabricating the same
App 20070093037 - Zhu; TingGang ; et al. | 2007-04-26 |
Semiconductor structures for gallium nitride-based devices
Grant 7,115,896 - Guo , et al. October 3, 2 | 2006-10-03 |
Lateral conduction Schottky diode with plural mesas
Grant 7,084,475 - Shelton , et al. August 1, 2 | 2006-08-01 |
Gallium nitride-based devices and manufacturing process
App 20060154455 - Guo; Shiping ; et al. | 2006-07-13 |
Gallium nitride semiconductor device
App 20060145283 - Zhu; TingGang ; et al. | 2006-07-06 |
Non-activated guard ring for semiconductor devices
App 20050202661 - Ceruzzi, Alex ; et al. | 2005-09-15 |
Low doped layer for nitride-based semiconductor device
App 20050179107 - Pophristic, Milan ; et al. | 2005-08-18 |
Lateral conduction schottky diode with plural mesas
App 20050179104 - Shelton, Bryan S. ; et al. | 2005-08-18 |
Gallium nitride-based devices and manufacturing process
App 20040119063 - Guo, Shiping ; et al. | 2004-06-24 |
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