loadpatents
Patent applications and USPTO patent grants for Pollack; Gordon P..The latest application filed is for "gate edge diode leakage reduction".
Patent | Date |
---|---|
Gate edge diode leakage reduction Grant 6,847,089 - Chakravarthi , et al. January 25, 2 | 2005-01-25 |
Gate edge diode leakage reduction App 20040195631 - Chakravarthi, Srinivasan ;   et al. | 2004-10-07 |
Gate edge diode leakage reduction App 20040195633 - Chakravarthi, Srinivasan ;   et al. | 2004-10-07 |
Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate Grant 5,482,871 - Pollack January 9, 1 | 1996-01-09 |
dRAM cell and method Grant 5,225,697 - Malhi , et al. July 6, 1 | 1993-07-06 |
Method of fabricating a SOI transistor with pocket implant and body-to-source (BTS) contact Grant 5,185,280 - Houston , et al. February 9, 1 | 1993-02-09 |
Method for forming a trench within a semiconductor layer of material Grant 5,120,675 - Pollack June 9, 1 | 1992-06-09 |
Semiconductor over insulator mesa and method of forming the same Grant 5,039,621 - Pollack August 13, 1 | 1991-08-13 |
Method for forming a buried lateral contact Grant 4,939,104 - Pollack , et al. * July 3, 1 | 1990-07-03 |
Method of making dRAM cell with trench capacitor Grant 4,797,373 - Malhi , et al. January 10, 1 | 1989-01-10 |
Plasma etching of refractory metals and their silicides Grant 4,659,426 - Fuller , et al. April 21, 1 | 1987-04-21 |
Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking Grant 4,538,343 - Pollack , et al. September 3, 1 | 1985-09-03 |
Composition for use in forming a doped oxide film Grant 3,915,766 - Pollack , et al. October 28, 1 | 1975-10-28 |
Compositions For Use In Forming A Doped Oxide Film Grant 3,837,873 - Pollack , et al. September 24, 1 | 1974-09-24 |
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