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Patent applications and USPTO patent grants for POISSON; Marie-Antoinette.The latest application filed is for "field-effect transistor with optimised performance and gain".
Patent | Date |
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Field-effect Transistor With Optimised Performance And Gain App 20180308966 - JACQUET; Jean-Claude ;   et al. | 2018-10-25 |
Semiconductor device for electron emission in a vacuum Grant 9,305,734 - Jacquet , et al. April 5, 2 | 2016-04-05 |
Semiconductor Device For Electron Emission In A Vacuum App 20140326943 - Jacquet; Jean-Claude ;   et al. | 2014-11-06 |
Hemt Transistors Consisting Of (iii-b)-n Wide Bandgap Semiconductors Comprising Boron App 20140327012 - Ougazzaden; Abdallah ;   et al. | 2014-11-06 |
Bipolar transistor with optimized structure Grant 5,668,388 - Delage , et al. September 16, 1 | 1997-09-16 |
Method for the making of the electrode metallizations of a transistor Grant 5,194,403 - Delage , et al. March 16, 1 | 1993-03-16 |
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