loadpatents
name:-0.0017452239990234
name:-0.01799488067627
name:-0.0005640983581543
Plus; Dora Patent Filings

Plus; Dora

Patent Applications and Registrations

Patent applications and USPTO patent grants for Plus; Dora.The latest application filed is for "redundant shift registers for scanning circuits in liquid crystal display devices".

Company Profile
0.15.0
  • Plus; Dora - South Bound Brook NJ
  • Plus; Dora - S. Bound Brook NJ
  • Plus; Dora - Shinchu TW
  • Plus; Dora - Borough of South Bound Brook NJ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Redundant shift registers for scanning circuits in liquid crystal display devices
Grant 5,796,390 - DuPont , et al. August 18, 1
1998-08-18
Data line drivers with common reference ramp display
Grant 5,670,979 - Huq , et al. September 23, 1
1997-09-23
Data driver circuit and associated method for use with scanned LCD video display
Grant 5,510,807 - Lee , et al. April 23, 1
1996-04-23
Data line defect avoidance structure
Grant 5,298,891 - Plus , et al. March 29, 1
1994-03-29
Shift register useful as a select line scanner for liquid crystal display
Grant 5,222,082 - Plus June 22, 1
1993-06-22
System for applying brightness signals to a display device and comparator therefore
Grant 5,170,155 - Plus , et al. December 8, 1
1992-12-08
Shift register, particularly for a liquid crystal display
Grant 5,136,622 - Plus August 4, 1
1992-08-04
Shift register for active matrix display devices
Grant 5,105,187 - Plus , et al. April 14, 1
1992-04-14
Memory cell structure having radiation hardness
Grant 4,903,094 - Plus , et al. February 20, 1
1990-02-20
Radiation hard memory cell having monocrystalline and non-monocrystalline inverters
Grant 4,872,141 - Plus , et al. October 3, 1
1989-10-03
Edgeless CMOS device
Grant 4,864,380 - Plus , et al. September 5, 1
1989-09-05
Memory cell circuit having radiation hardness
Grant 4,833,644 - Plus , et al. May 23, 1
1989-05-23
Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
Grant 4,791,464 - Ipri , et al. December 13, 1
1988-12-13
Semiconductor device with source and drain depth extenders and a method of making the same
Grant 4,786,955 - Plus , et al. November 22, 1
1988-11-22
High-speed voltage level shift circuit
Grant 4,656,373 - Plus April 7, 1
1987-04-07

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