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Patent applications and USPTO patent grants for Pitzer; Dorman C..The latest application filed is for "method of fabricating trench-gated power mosfet".
Patent | Date |
---|---|
High density trench-gated power MOSFET Grant 6,348,712 - Korec , et al. February 19, 2 | 2002-02-19 |
Method of fabricating trench-gated power MOSFET App 20010045598 - Korec, Jacek ;   et al. | 2001-11-29 |
Method of forming vertical planar DMOSFET with self-aligned contact Grant 6,277,695 - Williams , et al. August 21, 2 | 2001-08-21 |
Trenched field effect transistor with PN depletion barrier Grant 5,917,216 - Floyd , et al. June 29, 1 | 1999-06-29 |
Structure of power mosfets, including termination structures Grant 5,521,409 - Hshieh , et al. May 28, 1 | 1996-05-28 |
Low on-resistance power MOS technology Grant 5,429,964 - Yilmaz , et al. July 4, 1 | 1995-07-04 |
Structure and fabrication of power MOSFETs, including termination structures Grant 5,404,040 - Hshieh , et al. April 4, 1 | 1995-04-04 |
Low on-resistance power MOS technology Grant 5,304,831 - Yilmaz , et al. April 19, 1 | 1994-04-19 |
Vertical MOSFET with current monitor utilizing common drain current mirror Grant 4,599,554 - Jaycox , et al. July 8, 1 | 1986-07-08 |
Method of making shadow isolated metal DMOS FET device Grant 4,561,168 - Pitzer , et al. December 31, 1 | 1985-12-31 |
Dielectric Structure For Semiconductor Device Grant 3,649,888 - Pitzer , et al. March 14, 1 | 1972-03-14 |
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