Pike, Jr.; Douglas A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Pike, Jr.; Douglas A..The latest application filed is for "self-aligned power mosfet device with recessed gate and source".

Company Profile

0.9.0

Pike, Jr.; Douglas A. - Bend OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Self-aligned power MOSFET device with recessed gate and source Grant 5,801,417 - Tsang , et al. September 1, 1	1998-09-01
High density power device fabrication process using undercut oxide sidewalls Grant 5,648,283 - Tsang , et al. July 15, 1	1997-07-15
IGBT device with platinum lifetime control and reduced gaw Grant 5,528,058 - Pike, Jr. , et al. June 18, 1	1996-06-18
High density power device fabrication process Grant 5,283,201 - Tsang , et al. February 1, 1	1994-02-01
IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Grant 5,283,202 - Pike, Jr. , et al. February 1, 1	1994-02-01
IGBT process to produce platinum lifetime control Grant 5,262,336 - Pike, Jr. , et al. November 16, 1	1993-11-16
Topographic pattern delineated power MOSFET with profile tailored recessed source Grant 5,045,903 - Meyer , et al. September 3, 1	1991-09-03
Method of making topographic pattern delineated power MOSFET with profile tailored recessed source Grant 5,019,522 - Meyer , et al. May 28, 1	1991-05-28
Iopographic pattern delineated power mosfet with profile tailored recessed source Grant 4,895,810 - Meyer , et al. January 23, 1	1990-01-23

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