| Patent | Date |
|---|
RC IGBT with an IGBT section and a diode section
Grant 11,398,472 - Laven , et al. July 26, 2 | 2022-07-26 |
Semiconductor die, semiconductor device and IGBT module
Grant 11,257,914 - Van Treek , et al. February 22, 2 | 2022-02-22 |
Power Semiconductor Device Including First and Second Trench Structures
App 20220052190 - Arnold; Thorsten ; et al. | 2022-02-17 |
Power Semiconductor Switch Having a Cross-Trench Structure
App 20210313460 - Dainese; Matteo ; et al. | 2021-10-07 |
Power transistor with dV/dt controllability and tapered mesas
Grant 11,114,528 - Dainese , et al. September 7, 2 | 2021-09-07 |
Power semiconductor device having a cross-trench arrangement
Grant 11,075,290 - Dainese , et al. July 27, 2 | 2021-07-27 |
Power Semiconductor Device with dV/dt Controllability and Low Gate Charge
App 20210210604 - Philippou; Alexander ; et al. | 2021-07-08 |
Semiconductor Die, Semiconductor Device and IGBT Module
App 20210119003 - Van Treek; Vera ; et al. | 2021-04-22 |
Power semiconductor device with dV/dt controllability and low gate charge
Grant 10,978,560 - Philippou , et al. April 13, 2 | 2021-04-13 |
RC IGBT with an IGBT Section and a Diode Section
App 20210083081 - Laven; Johannes Georg ; et al. | 2021-03-18 |
Diode with Structured Barrier Region
App 20210083051 - Laven; Johannes Georg ; et al. | 2021-03-18 |
IGBT having a barrier region
Grant 10,930,772 - Philippou , et al. February 23, 2 | 2021-02-23 |
Method of Processing a Power Semiconductor Device
App 20210050436 - Vellei; Antonio ; et al. | 2021-02-18 |
IGBT with dV/dt Controllability
App 20210043759 - Philippou; Alexander ; et al. | 2021-02-11 |
Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same
Grant 10,910,487 - Philippou , et al. February 2, 2 | 2021-02-02 |
Method for producing IGBT with dV/dt controllability
Grant 10,854,739 - Vellei , et al. December 1, 2 | 2020-12-01 |
IGBT with dV/dt controllability
Grant 10,840,362 - Philippou , et al. November 17, 2 | 2020-11-17 |
Method for Producing IGBT with dV/dt Controllability
App 20200235232 - Vellei; Antonio ; et al. | 2020-07-23 |
Power semiconductor device having an SOI island
Grant 10,658,457 - Philippou , et al. | 2020-05-19 |
Method for producing IGBT with dV/dt controllability
Grant 10,615,272 - Vellei , et al. | 2020-04-07 |
Trench transistor device
Grant 10,608,104 - Philippou , et al. | 2020-03-31 |
IGBT Having a Barrier Region
App 20200006539 - Philippou; Alexander ; et al. | 2020-01-02 |
Power Semiconductor Device With Dv/dt Controllability
App 20190319122 - Philippou; Alexander ; et al. | 2019-10-17 |
IGBT with dV/dt controllability
Grant 10,439,055 - Philippou , et al. O | 2019-10-08 |
IGBT with dV/dt Controllability and Tapered Mesas
App 20190305083 - Dainese; Matteo ; et al. | 2019-10-03 |
IGBT with dV/dt Controllability and Low Gate Charge
App 20190305087 - Philippou; Alexander ; et al. | 2019-10-03 |
Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device
Grant 10,424,645 - Philippou , et al. Sept | 2019-09-24 |
Power Semiconductor Device Having a Cross-Trench Arrangement
App 20190273155 - Dainese; Matteo ; et al. | 2019-09-05 |
Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same
Grant 10,347,754 - Philippou , et al. July 9, 2 | 2019-07-09 |
Power Semiconductor Device Having an SOI Island
App 20190198612 - Philippou; Alexander ; et al. | 2019-06-27 |
Power semiconductor device with dV/dt controllability and cross-trench arrangement
Grant 10,304,952 - Dainese , et al. | 2019-05-28 |
IGBT with dV/dt Controllability
App 20190123186 - Philippou; Alexander ; et al. | 2019-04-25 |
Method for Producing IGBT with dV/dt Controllability
App 20190123185 - Vellei; Antonio ; et al. | 2019-04-25 |
SOI island in a power semiconductor device
Grant 10,256,299 - Philippou , et al. | 2019-04-09 |
Power Semiconductor Device with dV/dt Controllability and Cross-Trench Arrangement
App 20180342605 - Dainese; Matteo ; et al. | 2018-11-29 |
Semiconductor device comprising transistor cell units with different threshold voltages
Grant 10,109,624 - Bina , et al. October 23, 2 | 2018-10-23 |
Semiconductor device with sensor potential in the active region
Grant 10,096,531 - Jaeger , et al. October 9, 2 | 2018-10-09 |
IGBT with dV/dt Controllability
App 20180286971 - Philippou; Alexander ; et al. | 2018-10-04 |
Power Semiconductor Device With Dv/dt Controllability
App 20180076309 - Philippou; Alexander ; et al. | 2018-03-15 |
SOI Island in a Power Semiconductor Device
App 20180053822 - Philippou; Alexander ; et al. | 2018-02-22 |
Semiconductor Device, Method for Testing a Semiconductor Device and Method for Forming a Semiconductor Device
App 20180033705 - Philippou; Alexander ; et al. | 2018-02-01 |
Semiconductor Device Comprising Transistor Cell Units With Different Threshold Voltages
App 20170309619 - Bina; Markus ; et al. | 2017-10-26 |
Semiconductor device with variable resistive element
Grant 9,691,887 - Philippou , et al. June 27, 2 | 2017-06-27 |
Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures
Grant 9,653,568 - Laven , et al. May 16, 2 | 2017-05-16 |
Semiconductor device and insulated gate bipolar transistor with barrier structure
Grant 9,553,179 - Vellei , et al. January 24, 2 | 2017-01-24 |
Semiconductor Device with Sensor Potential in the Active Region
App 20160099188 - Jaeger; Christian ; et al. | 2016-04-07 |
Semiconductor Device with Variable Resistive Element
App 20160087005 - Philippou; Alexander ; et al. | 2016-03-24 |
Trench Transistor Device
App 20150279985 - Philippou; Alexander ; et al. | 2015-10-01 |
Method of Manufacturing an Insulated Gate Bipolar Transistor with Mesa Sections Between Cell Trench Structures
App 20150270369 - Laven; Johannes Georg ; et al. | 2015-09-24 |
Semiconductor Device and Insulated Gate Bipolar Transistor with Barrier Structure
App 20150221756 - Vellei; Antonio ; et al. | 2015-08-06 |
Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing
Grant 9,076,838 - Laven , et al. July 7, 2 | 2015-07-07 |
Reverse conducting insulated gate bipolar transistor
Grant 9,018,674 - Werber , et al. April 28, 2 | 2015-04-28 |
Insulated Gate Bipolar Transistor with Mesa Sections Between Cell Trench Structures and Method of Manufacturing
App 20150076554 - Laven; Johannes Georg ; et al. | 2015-03-19 |
Reverse Conducting Insulated Gate Bipolar Transistor
App 20130264607 - Werber; Dorothea ; et al. | 2013-10-10 |
Method for determining an edge profile of a volume of a photoresist after a development process
Grant 7,270,922 - Philippou , et al. September 18, 2 | 2007-09-18 |
Method For Determining An Edge Profile Of A Volume Of A Photoresist After A Development Process
App 20070212624 - Philippou; Alexander ; et al. | 2007-09-13 |
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