loadpatents
Patent applications and USPTO patent grants for Peres; Boris.The latest application filed is for "layout design for a high power, gan-based fet".
Patent | Date |
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Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes Grant 8,729,565 - Liu , et al. May 20, 2 | 2014-05-20 |
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET App 20130328060 - Liu; LinLin ;   et al. | 2013-12-12 |
Layout design for a high power, GaN-based FET having interdigitated electrodes Grant 8,530,903 - Liu , et al. September 10, 2 | 2013-09-10 |
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET App 20130043487 - Liu; LinLin ;   et al. | 2013-02-21 |
Layout design for a high power, GaN-based FET Grant 8,319,256 - Liu , et al. November 27, 2 | 2012-11-27 |
LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET App 20110316045 - LIU; Linlin ;   et al. | 2011-12-29 |
Package for Semiconductor Devices App 20100140627 - Shelton; Bryan S. ;   et al. | 2010-06-10 |
GaN semiconductor based voltage conversion device Grant 7,116,567 - Shelton , et al. October 3, 2 | 2006-10-03 |
Semiconductor structures for gallium nitride-based devices Grant 7,115,896 - Guo , et al. October 3, 2 | 2006-10-03 |
Lateral conduction Schottky diode with plural mesas Grant 7,084,475 - Shelton , et al. August 1, 2 | 2006-08-01 |
Package for gallium nitride semiconductor devices App 20060151868 - Zhu; TingGang ;   et al. | 2006-07-13 |
Gallium nitride-based devices and manufacturing process App 20060154455 - Guo; Shiping ;   et al. | 2006-07-13 |
Gan Semiconductor Based Voltage Conversion Device App 20060145674 - Shelton; Bryan S. ;   et al. | 2006-07-06 |
Lateral conduction schottky diode with plural mesas App 20050179104 - Shelton, Bryan S. ;   et al. | 2005-08-18 |
Gallium nitride-based devices and manufacturing process App 20040119063 - Guo, Shiping ;   et al. | 2004-06-24 |
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