PENDHARKAR; Sameer Prakash

Patent Applications and Registrations

Patent applications and USPTO patent grants for PENDHARKAR; Sameer Prakash.The latest application filed is for "gallium nitride (gan) based transistor with multiple p-gan blocks".

Company Profile

2.5.7

PENDHARKAR; Sameer Prakash - Allen TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS App 20210280702 - SUH; Chang Soo ; et al.	2021-09-09
Gallium nitride (GaN) based transistor with multiple p-GaN blocks Grant 11,049,960 - Suh , et al. June 29, 2	2021-06-29
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS App 20200287033 - SUH; Chang Soo ; et al.	2020-09-10
Group IIIA-N HEMT with a tunnel diode in the gate stack Grant 10,707,324 - Suh , et al.	2020-07-07
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack App 20190319111 - SUH; CHANG SOO ; et al.	2019-10-17
Group IIIA-N HEMT with a tunnel diode in the gate stack Grant 10,381,456 - Suh , et al. A	2019-08-13
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack App 20180323297 - SUH; CHANG SOO ; et al.	2018-11-08
Schottky diode with silicide anode and anode-encircling P-type doped region Grant 8,129,814 - Pendharkar , et al. March 6, 2	2012-03-06
Schottky Diode With Silicide Anode And Anode-encircling P-type Doped Region App 20110186933 - Pendharkar; Sameer Prakash ; et al.	2011-08-04
Methods of manufacturing trench isolated drain extended MOS (demos) transistors and integrated circuits therefrom Grant 7,745,294 - Pendharkar , et al. June 29, 2	2010-06-29
Methods Of Manufacturing Trench Isolated Drain Extended Mos (demos) Transistors And Integrated Circuits Therefrom App 20100117150 - Pendharkar; Sameer Prakash ; et al.	2010-05-13
Cosi2 Schottky Diode Integration In Bismos Process App 20090194838 - Pendharkar; Sameer Prakash ; et al.	2009-08-06

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