loadpatents
Patent applications and USPTO patent grants for Pendharkar; Sameer P..The latest application filed is for "hybrid active-field gap extended drain mos transistor".
Patent | Date |
---|---|
Transistor having double isolation with one floating isolation Grant 10,937,905 - Zhang , et al. March 2, 2 | 2021-03-02 |
Integrated trench capacitor Grant 10,903,306 - Hu , et al. January 26, 2 | 2021-01-26 |
Integrated high-side driver for P-N bimodal power device Grant 10,601,422 - Zhang , et al. | 2020-03-24 |
Structures to avoid floating resurf layer in high voltage lateral devices Grant 10,319,809 - Zhang , et al. | 2019-06-11 |
Hybrid Active-field Gap Extended Drain Mos Transistor App 20190172930 - PENDHARKAR; Sameer P. ;   et al. | 2019-06-06 |
Integrated Trench Capacitor App 20190051721 - Hu; Binghua ;   et al. | 2019-02-14 |
Hybrid active-field gap extended drain MOS transistor Grant 10,205,001 - Pendharkar , et al. Feb | 2019-02-12 |
Integrated trench capacitor Grant 10,134,830 - Hu , et al. November 20, 2 | 2018-11-20 |
P-N bimodal transistors Grant 10,121,891 - Zhang , et al. November 6, 2 | 2018-11-06 |
Diluted drift layer with variable stripe widths for power transistors Grant 9,985,028 - Zhang , et al. May 29, 2 | 2018-05-29 |
Structures To Avoid Floating Resurf Layer In High Voltage Lateral Devices App 20180108729 - Zhang; Yongxi ;   et al. | 2018-04-19 |
Integrated High-side Driver For P-n Bimodal Power Device App 20180097517 - Zhang; Yongxi ;   et al. | 2018-04-05 |
Integrated Trench Capacitor App 20180076277 - Hu; Binghua ;   et al. | 2018-03-15 |
Structures to avoid floating RESURF layer in high voltage lateral devices Grant 9,876,071 - Zhang , et al. January 23, 2 | 2018-01-23 |
Poly sandwich for deep trench fill Grant 9,865,691 - Hu , et al. January 9, 2 | 2018-01-09 |
Integrated high-side driver for P-N bimodal power device Grant 9,843,322 - Zhang , et al. December 12, 2 | 2017-12-12 |
High voltage multiple channel LDMOS Grant 9,806,074 - Zhang , et al. October 31, 2 | 2017-10-31 |
Integrated High-Side Driver For P-N Bimodal Power Device App 20170264289 - Zhang; Yongxi ;   et al. | 2017-09-14 |
Diluted Drift Layer With Variable Stripe Widths For Power Transistors App 20170221896 - ZHANG; Yongxi ;   et al. | 2017-08-03 |
High breakdown n-type buried layer Grant 9,673,273 - Pendharkar , et al. June 6, 2 | 2017-06-06 |
Diluted drift layer with variable stripe widths for power transistors Grant 9,653,577 - Zhang , et al. May 16, 2 | 2017-05-16 |
Poly Sandwich For Deep Trench Fill App 20170125528 - Hu; Binghua ;   et al. | 2017-05-04 |
Implant profiling with resist Grant 9,633,849 - Pendharkar , et al. April 25, 2 | 2017-04-25 |
Hybrid active-field gap extended drain MOS transistor Grant 9,608,088 - Pendharkar , et al. March 28, 2 | 2017-03-28 |
P-n Bimodal Transistors App 20170084738 - Zhang; Yongxi ;   et al. | 2017-03-23 |
Poly sandwich for deep trench fill Grant 9,583,579 - Hu , et al. February 28, 2 | 2017-02-28 |
P-N bimodal conduction resurf LDMOS Grant 9,543,299 - Zhang , et al. January 10, 2 | 2017-01-10 |
Hybrid Active-field Gap Extended Drain Mos Transistor App 20160343852 - PENDHARKAR; Sameer P. ;   et al. | 2016-11-24 |
Diluted Drift Layer With Variable Stripe Widths For Power Transistors App 20160336427 - ZHANG; Yongxi ;   et al. | 2016-11-17 |
High Breakdown N-Type Buried Layer App 20160315141 - Pendharkar; Sameer P. ;   et al. | 2016-10-27 |
Poly Sandwich For Deep Trench Fill App 20160308007 - Hu; Binghua ;   et al. | 2016-10-20 |
Structures To Avoid Floating Resurf Layer In High Voltage Lateral Devices App 20160254346 - Zhang; Yongxi ;   et al. | 2016-09-01 |
Diluted drift layer with variable stripe widths for power transistors Grant 9,431,480 - Zhang , et al. August 30, 2 | 2016-08-30 |
Deep trench with self-aligned sinker Grant 9,431,286 - Pendharkar , et al. August 30, 2 | 2016-08-30 |
Implant Profiling With Resist App 20160225672 - PENDHARKAR; Sameer P. ;   et al. | 2016-08-04 |
Poly sandwich for deep trench fill Grant 9,401,410 - Hu , et al. July 26, 2 | 2016-07-26 |
High breakdown N-type buried layer Grant 9,385,187 - Pendharkar , et al. July 5, 2 | 2016-07-05 |
Low resistance LDMOS with reduced gate charge Grant 9,362,398 - Pendharkar June 7, 2 | 2016-06-07 |
Poly Sandwich For Deep Trench Fill App 20160149011 - Hu; Binghua ;   et al. | 2016-05-26 |
Implant profiling with resist Grant 9,337,106 - Pendharkar , et al. May 10, 2 | 2016-05-10 |
High Voltage Multiple Channel Ldmos App 20160093612 - Zhang; Yongxi ;   et al. | 2016-03-31 |
High voltage multiple channel LDMOS Grant 9,245,998 - Zhang , et al. January 26, 2 | 2016-01-26 |
Transistor Having Double Isolation With One Floating Isolation App 20150340496 - ZHANG; YONGXI ;   et al. | 2015-11-26 |
High Breakdown N-type Buried Layer App 20150311281 - Pendharkar; Sameer P. ;   et al. | 2015-10-29 |
High Voltage Multiple Channel Ldmos App 20150187934 - Zhang; Yongxi ;   et al. | 2015-07-02 |
Implant Profiling With Resist App 20150187658 - PENDHARKAR; Sameer P. ;   et al. | 2015-07-02 |
Hybrid Active-field Gap Extended Drain Mos Transistor App 20140256108 - PENDHARKAR; Sameer P. ;   et al. | 2014-09-11 |
Low cost high voltage power FET and fabrication Grant 8,790,981 - Burgess , et al. July 29, 2 | 2014-07-29 |
Hybrid active-field gap extended drain MOS transistor Grant 8,754,469 - Pendharkar , et al. June 17, 2 | 2014-06-17 |
Stacked ESD clamp with reduced variation in clamp voltage Grant 8,598,008 - Pendharkar , et al. December 3, 2 | 2013-12-03 |
High voltage diode with reduced substrate injection Grant 8,309,423 - Pendharkar , et al. November 13, 2 | 2012-11-13 |
Isolation trench with rounded corners for BiCMOS process Grant 8,274,131 - Pendharkar , et al. September 25, 2 | 2012-09-25 |
Buried floating layer structure for improved breakdown Grant 8,264,038 - Pendharkar , et al. September 11, 2 | 2012-09-11 |
Bi-directional DMOS with common drain Grant 8,217,453 - Pendharkar July 10, 2 | 2012-07-10 |
High Voltage Diode With Reduced Substrate Injection App 20120164814 - PENDHARKAR; Sameer P. ;   et al. | 2012-06-28 |
Hybrid Active-field Gap Extended Drain Mos Transistor App 20120098062 - Pendharkar; Sameer P. ;   et al. | 2012-04-26 |
Stacked Esd Clamp With Reduced Variation In Clamp Voltage App 20120098098 - Pendharkar; Sameer P. ;   et al. | 2012-04-26 |
Low Resistance Ldmos With Reduced Gate Charge App 20120098065 - Pendharkar; Sameer P. | 2012-04-26 |
High voltage diode with reduced substrate injection Grant 8,154,101 - Pendharkar , et al. April 10, 2 | 2012-04-10 |
High voltage SCRMOS in BiCMOS process technologies Grant 8,125,030 - Pendharkar February 28, 2 | 2012-02-28 |
High voltage SCRMOS in BiCMOS process technologies Grant 8,120,108 - Pendharkar February 21, 2 | 2012-02-21 |
Methods of forming drain extended transistors Grant 8,110,454 - Pendharkar February 7, 2 | 2012-02-07 |
Method of using electrical test structure for semiconductor trench depth monitor Grant 7,989,232 - Wang , et al. August 2, 2 | 2011-08-02 |
HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES App 20110180870 - PENDHARKAR; Sameer P. | 2011-07-28 |
HIGH VOLTAGE SCRMOS IN BiCMOS PROCESS TECHNOLOGIES App 20110180842 - PENDHARKAR; Sameer P. | 2011-07-28 |
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS App 20110073955 - Pendharkar; Sameer P. ;   et al. | 2011-03-31 |
Isolation trench with rounded corners for BiCMOS process Grant 7,846,789 - Pendharkar , et al. December 7, 2 | 2010-12-07 |
LDMOS transistor double diffused region formation process Grant 7,713,825 - Hu , et al. May 11, 2 | 2010-05-11 |
System and method for making a LDMOS device with electrostatic discharge protection Grant 7,687,853 - Pendharkar , et al. March 30, 2 | 2010-03-30 |
Buried Floating Layer Structure For Improved Breakdown App 20100032756 - PENDHARKAR; Sameer P. ;   et al. | 2010-02-11 |
High Voltage Diode With Reduced Substrate Injection App 20100032794 - PENDHARKAR; Sameer P. ;   et al. | 2010-02-11 |
Bi-directional Dmos With Common Drain App 20100032757 - PENDHARKAR; Sameer P. | 2010-02-11 |
Low Cost High Voltage Power Fet And Fabrication App 20100032774 - Burgess; Byron Neville ;   et al. | 2010-02-11 |
Methods Of Forming Drain Extended Transistors App 20090325352 - Pendharkar; Sameer P. | 2009-12-31 |
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS App 20090096033 - Pendharkar; Sameer P. ;   et al. | 2009-04-16 |
System And Method For Making A Ldmos Device With Electrostatic Discharge Protection App 20080296669 - Pendharkar; Sameer P. ;   et al. | 2008-12-04 |
Unique Ldmos Process Integration App 20080293206 - Hu; Binghua ;   et al. | 2008-11-27 |
Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation process Grant 7,435,659 - Hu , et al. October 14, 2 | 2008-10-14 |
System and method for making a LDMOS device with electrostatic discharge protection Grant 7,414,287 - Pendharkar , et al. August 19, 2 | 2008-08-19 |
Method Of Using Electrical Test Structure For Semiconductor Trench Depth Monitor App 20080085569 - Wang; Qingfeng ;   et al. | 2008-04-10 |
Drive circuit and drain extended transistor for use therein App 20070246773 - Pendharkar; Sameer P. | 2007-10-25 |
Drain extended MOS transistor with improved breakdown robustness Grant 7,208,386 - Pendharkar April 24, 2 | 2007-04-24 |
Distributed power MOSFET Grant 7,187,034 - Hower , et al. March 6, 2 | 2007-03-06 |
Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation process App 20060194401 - Hu; Binghua ;   et al. | 2006-08-31 |
System and method for making a LDMOS device with electrostatic discharge protection App 20060186467 - Pendharkar; Sameer P. ;   et al. | 2006-08-24 |
Drain extended MOS transistor with improved breakdown robustness App 20060051933 - Pendharkar; Sameer P. | 2006-03-09 |
Drain extend MOS transistor with improved breakdown robustness Grant 6,960,807 - Pendharkar November 1, 2 | 2005-11-01 |
Efficient protection structure for reverse pin-to-pin electrostatic discharge Grant 6,919,603 - Brodsky , et al. July 19, 2 | 2005-07-19 |
Low leakage power transistor and method of forming Grant 6,908,859 - Pendharkar , et al. June 21, 2 | 2005-06-21 |
Drain extended MOS transistor with improved breakdown robustness App 20050110081 - Pendharkar, Sameer P. | 2005-05-26 |
Method of manufacturing and structure of semiconductor device with floating ring structure Grant 6,884,686 - Pendharkar April 26, 2 | 2005-04-26 |
Distributed power MOSFET App 20040256669 - Hower, Philip L. ;   et al. | 2004-12-23 |
Bladed silicon-on-insulator semiconductor devices and method of making App 20040222485 - Haynie, Sheldon D. ;   et al. | 2004-11-11 |
Segmented power MOSFET of safe operation Grant 6,815,276 - Hower , et al. November 9, 2 | 2004-11-09 |
Efficient protection structure for reverse pin-to-pin electrostatic discharge App 20040217425 - Brodsky, Jonathan ;   et al. | 2004-11-04 |
Bladed silicon-on-insulator semiconductor devices and method of making Grant 6,800,917 - Haynie , et al. October 5, 2 | 2004-10-05 |
Bladed silicon-on-insulator semiconductor devices and method of making Grant 6,797,547 - Haynie , et al. September 28, 2 | 2004-09-28 |
Bladed silicon-on-insulator semiconductor devices and method of making App 20040129976 - Haynie, Sheldon D. ;   et al. | 2004-07-08 |
Bladed silicon-on-insulator semiconductor devices and method of making App 20040113223 - Haynie, Sheldon D. ;   et al. | 2004-06-17 |
Method of manufacturing and structure of semiconductor device with floating ring structure App 20040079975 - Pendharkar, Sameer P. | 2004-04-29 |
Distributed power MOSFET App 20040067617 - Hower, Philip L. ;   et al. | 2004-04-08 |
Method of manufacturing and structure of semiconductor device with floating ring structure Grant 6,670,685 - Pendharkar December 30, 2 | 2003-12-30 |
Method Of Manufacturing And Structure Of Semiconductor Device With Floating Ring Structure App 20030219949 - Pendharkar, Sameer P. | 2003-11-27 |
ESD robust bipolar transistor with high variable trigger and sustaining voltages Grant 6,624,481 - Pendharkar , et al. September 23, 2 | 2003-09-23 |
Low leakage power transistor and method of forming App 20030073313 - Pendharkar, Sameer P. ;   et al. | 2003-04-17 |
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