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name:-0.0070099830627441
name:-0.0044820308685303
name:-0.00048208236694336
Pei; Dongfei Patent Filings

Pei; Dongfei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Pei; Dongfei.The latest application filed is for "iii-nitride diode with a modified access region".

Company Profile
0.2.5
  • Pei; Dongfei - Waban MA
  • Pei; Dongfei - Schenectady NY
  • Pei; Dongfei - Guilderland NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
III-Nitride Diode With A Modified Access Region
App 20210399145 - Pei; Dongfei ;   et al.
2021-12-23
III-Nitride Transistor With A Cap Layer For RF Operation
App 20210265477 - Lu; Bin ;   et al.
2021-08-26
III-Nitride Transistor With A Modified Drain Access Region
App 20210167202 - Lu; Bin ;   et al.
2021-06-03
Via and skip via structures
Grant 10,157,833 - Zhang , et al. Dec
2018-12-18
Via And Skip Via Structures
App 20180342454 - Zhang; Xunyuan ;   et al.
2018-11-29
Low dielectric constant (low-k) dielectric and method of forming the same
Grant 10,090,150 - Shohet , et al. October 2, 2
2018-10-02
Low Dielectric Constant (low-k) Dielectric And Method Of Forming The Same
App 20180068848 - Shohet; J. Leon ;   et al.
2018-03-08

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