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name:-0.032212018966675
name:-0.027410984039307
name:-0.0019102096557617
Papageorgiou; Vassilios Patent Filings

Papageorgiou; Vassilios

Patent Applications and Registrations

Patent applications and USPTO patent grants for Papageorgiou; Vassilios.The latest application filed is for "strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode".

Company Profile
1.33.26
  • Papageorgiou; Vassilios - Austin TX US
  • Papageorgiou; Vassilios - Dresden DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Graded well implantation for asymmetric transistors having reduced gate electrode pitches
Grant 9,449,826 - Mulfinger , et al. September 20, 2
2016-09-20
Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch process
Grant 9,269,631 - Kronholz , et al. February 23, 2
2016-02-23
Adjusting configuration of a multiple gate transistor by controlling individual fins
Grant 9,035,306 - Hoentschel , et al. May 19, 2
2015-05-19
Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode
Grant 8,969,916 - Kronholz , et al. March 3, 2
2015-03-03
Strain Enhancement In Transistors Comprising An Embedded Strain-inducing Semiconductor Alloy By Creating A Patterning Non-uniformity At The Bottom Of The Gate Electrode
App 20140339604 - Kronholz; Stephan ;   et al.
2014-11-20
Performance Enhancement In Pmos And Nmos Transistors On The Basis Of Silicon/carbon Material
App 20140264386 - Hoentschel; Jan ;   et al.
2014-09-18
Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode
Grant 8,828,819 - Kronholz , et al. September 9, 2
2014-09-09
Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material
Grant 8,772,878 - Hoentschel , et al. July 8, 2
2014-07-08
Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process
Grant 8,735,253 - Kronholz , et al. May 27, 2
2014-05-27
Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material
Grant 8,664,049 - Kronholz , et al. March 4, 2
2014-03-04
Adjusting Configuration Of A Multiple Gate Transistor By Controlling Individual Fins
App 20130306967 - Hoentschel; Jan ;   et al.
2013-11-21
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 8,530,894 - Mowry , et al. September 10, 2
2013-09-10
Transistor with an embedded strain-inducing material having a gradually shaped configuration
Grant 8,466,520 - Kronholz , et al. June 18, 2
2013-06-18
Adjusting configuration of a multiple gate transistor by controlling individual fins
Grant 8,450,124 - Hoentschel , et al. May 28, 2
2013-05-28
Strain Enhancement In Transistors Comprising An Embedded Strain-inducing Semiconductor Alloy By Creating A Patterning Non-uniformity At The Bottom Of The Gate Electrode
App 20130130449 - Kronholz; Stephan ;   et al.
2013-05-23
Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode
Grant 8,357,573 - Kronholz , et al. January 22, 2
2013-01-22
Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration
Grant 8,338,274 - Kronholz , et al. December 25, 2
2012-12-25
In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
Grant 8,278,174 - Hoentschel , et al. October 2, 2
2012-10-02
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20120223309 - Mowry; Anthony ;   et al.
2012-09-06
Transistor With An Embedded Strain-inducing Material Having A Gradually Shaped Configuration
App 20120223363 - Kronholz; Stephan ;   et al.
2012-09-06
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 8,227,266 - Mowry , et al. July 24, 2
2012-07-24
Transistor with an embedded strain-inducing material having a gradually shaped configuration
Grant 8,202,777 - Kronholz , et al. June 19, 2
2012-06-19
Performance Enhancement in PMOS and NMOS Transistors on the Basis of Silicon/Carbon Material
App 20120129308 - Hoentschel; Jan ;   et al.
2012-05-24
Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material
Grant 8,154,084 - Hoentschel , et al. April 10, 2
2012-04-10
Transistor device comprising an asymmetric embedded semiconductor alloy
Grant 8,138,050 - Papageorgiou , et al. March 20, 2
2012-03-20
Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
Grant 8,124,467 - Kronholz , et al. February 28, 2
2012-02-28
Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptation
Grant 8,018,260 - Papageorgiou , et al. September 13, 2
2011-09-13
Semiconductor Element Formed In A Crystalline Substrate Material And Comprising An Embedded In Situ N-doped Semiconductor Material
App 20100327358 - Kronholz; Stephan ;   et al.
2010-12-30
Drive current increase in transistors by asymmetric amorphization implantation
Grant 7,855,118 - Hoentschel , et al. December 21, 2
2010-12-21
Strain Enhancement In Transistors Comprising An Embedded Strain-inducing Semiconductor Alloy By Creating A Patterning Non-uniformity At The Bottom Of The Gate Electrode
App 20100301421 - Kronholz; Stephan ;   et al.
2010-12-02
Semiconductor Element Formed In A Crystalline Substrate Material And Comprising An Embedded In Situ Doped Semiconductor Material
App 20100289114 - KRONHOLZ; Stephan ;   et al.
2010-11-18
Reducing Silicide Resistance In Silicon/germanium-containing Drain/source Regions Of Transistors
App 20100244107 - Kronholz; Stephan ;   et al.
2010-09-30
Adjusting Of A Non-silicon Fraction In A Semiconductor Alloy During Transistor Fabrication By An Intermediate Oxidation Process
App 20100221883 - Kronholz; Stephan ;   et al.
2010-09-02
Integration Of Semiconductor Alloys In Pmos And Nmos Transistors By Using A Common Cavity Etch Process
App 20100219475 - Kronholz; Stephan ;   et al.
2010-09-02
Graded Well Implantation For Asymmetric Transistors Having Reduced Gate Electrode Pitches
App 20100193866 - Mulfinger; G Robert ;   et al.
2010-08-05
In Situ Formed Drain And Source Regions Including A Strain-inducing Alloy And A Graded Dopant Profile
App 20100193882 - Hoentschel; Jan ;   et al.
2010-08-05
Transistor With An Embedded Strain-inducing Material Having A Gradually Shaped Configuration
App 20100164020 - Kronholz; Stephan ;   et al.
2010-07-01
Transistor Device Comprising An Embedded Semiconductor Alloy Having An Asymmetric Configuration
App 20100163939 - Kronholz; Stephan ;   et al.
2010-07-01
Adjusting Configuration Of A Multiple Gate Transistor By Controlling Individual Fins
App 20100164530 - Hoentschel; Jan ;   et al.
2010-07-01
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20100155727 - MOWRY; ANTHONY ;   et al.
2010-06-24
Compensation Of Degradation Of Performance Of Semiconductor Devices By Clock Duty Cycle Adaptation
App 20100134167 - Papageorgiou; Vassilios ;   et al.
2010-06-03
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Grant 7,713,763 - Mowry , et al. May 11, 2
2010-05-11
Transistor Device Comprising An Asymmetric Embedded Semiconductor Alloy
App 20100081244 - Papageorgiou; Vassilios ;   et al.
2010-04-01
Transistor With Embedded Si/ge Material Having Enhanced Boron Confinement
App 20100025743 - Hoentschel; Jan ;   et al.
2010-02-04
Performance Enhancement In Pmos And Nmos Transistors On The Basis Of Silicon/carbon Material
App 20100025771 - Hoentschel; Jan ;   et al.
2010-02-04
Drive Current Increase In Transistors By Asymmetric Amorphization Implantation
App 20090298249 - Hoentschel; Jan ;   et al.
2009-12-03
Method and device for determining an operational lifetime of an integrated circuit device
Grant 7,616,021 - Papageorgiou , et al. November 10, 2
2009-11-10
Test Structure For Monitoring Process Characteristics For Forming Embedded Semiconductor Alloys In Drain/source Regions
App 20090166618 - Mowry; Anthony ;   et al.
2009-07-02
Method And Device For Determining An Operational Lifetime Of An Integrated Circuit Device
App 20080174329 - Papageorgiou; Vassilios ;   et al.
2008-07-24
System and method for testing packaged devices using time domain reflectometry
Grant 7,206,703 - Papageorgiou , et al. April 17, 2
2007-04-17

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