Trademark applications and grants for Pang, Ying. Pang, Ying has 2 trademark applications. The latest application filed is for "HOIKSTOM"
Entity Type | INDIVIDUAL |
Address | No. 004-3, Bainichong 7th Team, Fanbi Village, Wendi Town, Bobai County, Guangxi CHINA 537609 |
Patent Application | Date |
---|---|
INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED WORKFUNCTION LAYERS 20200219775 - 16/631352 PANG; Ying ;   et al. | 2020-07-09 |
CMOS DEVICE INCLUDING PMOS METAL GATE WITH LOW THRESHOLD VOLTAGE 20190305102 - 15/943567 LAVRIC; Dan S. ;   et al. | 2019-10-03 |
TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN 20190109234 - 16/199445 GLASS; GLENN A. ;   et al. | 2019-04-11 |
REPLACEMENT CHANNEL ETCH FOR HIGH QUALITY INTERFACE 20180197789 - 15/576396 GLASS; GLENN A. ;   et al. | 2018-07-12 |
SUB-FIN SIDEWALL PASSIVATION IN REPLACEMENT CHANNEL FINFETS 20180151677 - 15/576150 GLASS; GLENN A. ;   et al. | 2018-05-31 |
Replacement channel etch for high quality interface 10,755,984 - 15/576,396 Glass , et al. A | 2020-08-25 |
Techniques for integration of Ge-rich p-MOS source/drain 10,541,334 - 16/199,445 Glass , et al. Ja | 2020-01-21 |
Sub-fin sidewall passivation in replacement channel FinFETS 10,510,848 - 15/576,150 Glass , et al. Dec | 2019-12-17 |
Techniques for integration of Ge-rich p-MOS source/drain 10,147,817 - 15/860,292 Glass , et al. De | 2018-12-04 |
Techniques for integration of Ge-rich p-MOS source/drain contacts 9,859,424 - 15/116,453 Glass , et al. January 2, 2 | 2018-01-02 |
Mark Image Registration | Serial | Trademark Application Date |
---|---|
"HOIKSTOM" 90473075 |
HOIKSTOM 2021-01-18 |
"FUVVIN" 90434706 |
FUVVIN 2020-12-30 |
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