| Patent | Date |
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Semiconductor Device with Multi-Layered Source/Drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof
App 20220262681 - Ma; Chih-Yu ; et al. | 2022-08-18 |
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
Grant 11,342,228 - Ma , et al. May 24, 2 | 2022-05-24 |
Fully Strained Channel
App 20220149157 - MORE; Shahaji B. ; et al. | 2022-05-12 |
Fully strained channel
Grant 11,233,123 - More , et al. January 25, 2 | 2022-01-25 |
Method Of Manufacturing A Semiconductor Device And A Semiconductor Device
App 20210359111 - CHIU; Ya-Wen ; et al. | 2021-11-18 |
Structure and method for high-K metal gate
Grant 11,171,220 - More , et al. November 9, 2 | 2021-11-09 |
Fin field effect transistor (FinFET) device structure
Grant 11,152,362 - Wang , et al. October 19, 2 | 2021-10-19 |
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers
App 20210257263 - More; Shahaji B. ; et al. | 2021-08-19 |
NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers
Grant 11,011,433 - More , et al. May 18, 2 | 2021-05-18 |
Semiconductor Device and Method
App 20210118740 - More; Shahaji B. ; et al. | 2021-04-22 |
Semiconductor device and method
Grant 10,879,126 - More , et al. December 29, 2 | 2020-12-29 |
Method to form a fully strained channel region
Grant 10,879,124 - Wang , et al. December 29, 2 | 2020-12-29 |
Semiconductor device with source/drain structures
Grant 10,879,396 - More , et al. December 29, 2 | 2020-12-29 |
Fin field effect transistor (FinFET) device structure
Grant 10,879,240 - Wang , et al. December 29, 2 | 2020-12-29 |
FinFET device and methods of forming same
Grant 10,867,799 - Wang , et al. December 15, 2 | 2020-12-15 |
Semiconductor Device With Multi-layered Source/drain Regions Having Different Dopant Concentrations And Manufacturing Method Thereof
App 20200365720 - Ma; Chih-Yu ; et al. | 2020-11-19 |
Structure and Method for High-K Metal Gate
App 20200295157 - More; Shahaji B. ; et al. | 2020-09-17 |
Methods for Forming Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers
App 20200251390 - Kind Code | 2020-08-06 |
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
Grant 10,734,524 - Ma , et al. | 2020-08-04 |
Semiconductor Device With Source/drain Structures
App 20200243683 - MORE; Shahaji B. ; et al. | 2020-07-30 |
Structure and method for high-k metal gate
Grant 10,672,886 - More , et al. | 2020-06-02 |
Fully Strained Channel
App 20200152742 - More; Shahaji B. ; et al. | 2020-05-14 |
Formation method of semiconductor device with source/drain structures
Grant 10,636,909 - More , et al. | 2020-04-28 |
Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers
Grant 10,629,496 - More , et al. | 2020-04-21 |
FinFET Device and Methods of Forming Same
App 20200105534 - Wang; Chun-Chieh ; et al. | 2020-04-02 |
Dopant Concentration Boost in Epitaxially Formed Material
App 20200091343 - Ma; Chih-Yu ; et al. | 2020-03-19 |
Fully strained channel
Grant 10,535,736 - More , et al. Ja | 2020-01-14 |
FinFET device and methods of forming same
Grant 10,522,358 - Wang , et al. Dec | 2019-12-31 |
Dopant concentration boost in epitaxially formed material
Grant 10,490,661 - Ma , et al. Nov | 2019-11-26 |
Semiconductor Device With Multi-layered Source/drain Regions Having Different Dopant Concentrations And Manufacturing Method The
App 20190334029 - Ma; Chih-Yu ; et al. | 2019-10-31 |
Semiconductor Device and Method
App 20190244864 - More; Shahaji B. ; et al. | 2019-08-08 |
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
Grant 10,347,764 - Ma , et al. July 9, 2 | 2019-07-09 |
Method To Form A Fully Strained Channel Region
App 20190157154 - Wang; Chun-Chieh ; et al. | 2019-05-23 |
Formation Method Of Semiconductor Device With Source/drain Structures
App 20190148552 - MORE; Shahaji B. ; et al. | 2019-05-16 |
Semiconductor device and method
Grant 10,269,646 - More , et al. | 2019-04-23 |
Fully Strained Channel
App 20190096997 - MORE; Shahaji B. ; et al. | 2019-03-28 |
Structure And Method For High-k Metal Gate
App 20190067457 - More; Shahaji B. ; et al. | 2019-02-28 |
FinFET Device and Methods of Forming Same
App 20190067011 - Wang; Chun-Chieh ; et al. | 2019-02-28 |
Implantations for Forming Source/Drain Regions of Different Transistors
App 20190035694 - More; Shahaji B. ; et al. | 2019-01-31 |
Semiconductor Device And Method
App 20190006507 - Ma; Chih-Yu ; et al. | 2019-01-03 |
Formation method and structure semiconductor device with source/drain structures
Grant 10,164,100 - More , et al. Dec | 2018-12-25 |
Formation Method And Structure Of Semiconductor Device With Source/drain Structures
App 20180294357 - MORE; Shahaji B. ; et al. | 2018-10-11 |
Formation method of semiconductor device structure with semiconductor nanowire
Grant 10,043,665 - More , et al. August 7, 2 | 2018-08-07 |
Structure of semiconductor device with source/drain structures
Grant 10,026,840 - More , et al. July 17, 2 | 2018-07-17 |
Semiconductor Device and Method
App 20180174913 - More; Shahaji B. ; et al. | 2018-06-21 |
Dopant Concentration Boost in Epitaxially Formed Material
App 20180151730 - Ma; Chih-Yu ; et al. | 2018-05-31 |
Formation Method Of Semiconductor Device Structure With Semiconductor Nanowire
App 20180151357 - MORE; Shahaji B. ; et al. | 2018-05-31 |
Fin Field Effect Transistor (finfet) Device Structure
App 20180145076 - WANG; Chun-Chieh ; et al. | 2018-05-24 |
Fin Field Effect Transistor (finfet) Device Structure
App 20180130802 - WANG; Chun-Chieh ; et al. | 2018-05-10 |
Structure Of Semiconductor Device With Source/drain Structures
App 20180108775 - MORE; Shahaji B. ; et al. | 2018-04-19 |
Method for detecting presence and location of defects in a substrate
Grant 9,917,189 - Hung , et al. March 13, 2 | 2018-03-13 |
Semiconductor structure with dopants diffuse protection and method for forming the same
Grant 9,899,273 - Wang , et al. February 20, 2 | 2018-02-20 |
Structure and formation method of semiconductor device with channel layer
Grant 9,847,334 - More , et al. December 19, 2 | 2017-12-19 |
Wafer supporting structure, and device and method for manufacturing semiconductor
Grant 9,721,826 - Ma , et al. August 1, 2 | 2017-08-01 |
Wafer Supporting Structure, And Device And Method For Manufacturing Semiconductor
App 20170213759 - MA; Chih-Yu ; et al. | 2017-07-27 |
Method for Detecting Presence and Location of Defects in a Substrate
App 20170033218 - Hung; Shih-Wei ; et al. | 2017-02-02 |
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