Patent | Date |
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MOS device with island region Grant 10,978,585 - Bhalla , et al. April 13, 2 | 2021-04-13 |
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode Grant 10,763,351 - Pan , et al. Sep | 2020-09-01 |
Wireless image processing system Grant 10,741,105 - Pan , et al. A | 2020-08-11 |
Mos Device With Island Region App 20200119185 - Bhalla; Anup ;   et al. | 2020-04-16 |
Device and fabrication of MOS device with island region Grant 10,535,764 - Bhalla , et al. Ja | 2020-01-14 |
Device structure having inter-digitated back to back MOSFETs Grant 10,388,781 - Bobde , et al. A | 2019-08-20 |
Compact source ballast trench MOSFET and method of manufacturing Grant 10,325,908 - Lui , et al. | 2019-06-18 |
Wireless Image Processing System App 20190130797 - Pan; Ji ;   et al. | 2019-05-02 |
Forming switch circuit with controllable phase node ringing Grant 10,256,236 - Pan , et al. | 2019-04-09 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Grant 10,192,982 - Yilmaz , et al. Ja | 2019-01-29 |
Suction lighting system and method Grant 10,161,607 - Pan , et al. Dec | 2018-12-25 |
Forming Switch Circuit With Controllable Phase Node Ringing App 20180342506 - Pan; Ji ;   et al. | 2018-11-29 |
Device And Fabrication Of Mos Device With Island Region App 20180337274 - Bhalla; Anup ;   et al. | 2018-11-22 |
Compact Source Ballast Trench Mosfet And Method Of Manufacturing App 20180315749 - Lui; Sik ;   et al. | 2018-11-01 |
Switch circuit with controllable phase node ringing Grant 10,103,140 - Pan , et al. October 16, 2 | 2018-10-16 |
MOS device with island region Grant 10,074,742 - Bhalla , et al. September 11, 2 | 2018-09-11 |
Variable snubber for MOSFET application Grant 10,062,685 - Lui , et al. August 28, 2 | 2018-08-28 |
Switch Circuit With Controllable Phase Node Ringing App 20180108652 - Pan; Ji ;   et al. | 2018-04-19 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact App 20170373185 - Yilmaz; Hamza ;   et al. | 2017-12-28 |
Device Structure Having Inter-digitated Back To Back Mosfets App 20170338337 - Bobde; Madhur ;   et al. | 2017-11-23 |
Variable Snubber For Mosfet Application App 20170287903 - Lui; Sik ;   et al. | 2017-10-05 |
Suction lighting system Grant 9,746,164 - Pan , et al. August 29, 2 | 2017-08-29 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Grant 9,748,375 - Yilmaz , et al. August 29, 2 | 2017-08-29 |
Suction Lighting System and Method App 20170241628 - Pan; Ji ;   et al. | 2017-08-24 |
Integrated snubber in a single poly MOSFET Grant 9,685,435 - Lui , et al. June 20, 2 | 2017-06-20 |
Method of making integrated MOSFET-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltage Grant 9,564,516 - Pan February 7, 2 | 2017-02-07 |
Flexible Crss Adjustment In A Sgt Mosfet To Smooth Waveforms And To Avoid Emi In Dc-dc Application App 20160315053 - Pan; Ji ;   et al. | 2016-10-27 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact App 20160190309 - Yilmaz; Hamza ;   et al. | 2016-06-30 |
Fabrication Of Mosfet Device With Reduced Breakdown Voltage App 20160190283 - Pan; Ji ;   et al. | 2016-06-30 |
Semiconductor device with termination structure for power MOSFET applications Grant 9,356,022 - Lee , et al. May 31, 2 | 2016-05-31 |
Integrated Snubber In A Single Poly Mosfet App 20160118380 - Lui; Sik ;   et al. | 2016-04-28 |
MOSFET device with reduced breakdown voltage Grant 9,312,336 - Pan , et al. April 12, 2 | 2016-04-12 |
Mos Device With Island Region App 20160087093 - Bhalla; Anup ;   et al. | 2016-03-24 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Grant 9,281,394 - Yilmaz , et al. March 8, 2 | 2016-03-08 |
Fabrication of MOS device with schottky barrier controlling layer Grant 9,236,450 - Bhalla , et al. January 12, 2 | 2016-01-12 |
Integrated snubber in a single poly MOSFET Grant 9,230,957 - Lui , et al. January 5, 2 | 2016-01-05 |
Semiconductor Device With Termination Structure For Power Mosfet Applications App 20150333174 - Lee; Yeeheng ;   et al. | 2015-11-19 |
Termination trench for power MOSFET applications Grant 9,105,494 - Lee , et al. August 11, 2 | 2015-08-11 |
Method Of Making Integrated Mosfet-schottky Diode Device With Reduced Source And Body Kelvin Contact Impedance And Breakdown Voltage App 20150171192 - Pan; Ji | 2015-06-18 |
Junction barrier schottky (JBS) with floating islands Grant 9,059,147 - Pan , et al. June 16, 2 | 2015-06-16 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Grant 9,006,053 - Pan , et al. April 14, 2 | 2015-04-14 |
Integrated MOSFET-Schottky diode device with reduced source and body Kelvin contact impedance and breakdown voltage Grant 8,969,950 - Pan March 3, 2 | 2015-03-03 |
MOS device with low injection diode Grant 8,928,079 - Bhalla , et al. January 6, 2 | 2015-01-06 |
Fabrication Of Mos Device With Schottky Barrier Controlling Layer App 20140357030 - Bhalla; Anup ;   et al. | 2014-12-04 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact App 20140319605 - Yilmaz; Hamza ;   et al. | 2014-10-30 |
Integrated Snubber In A Single Poly Mosfet App 20140252494 - Lui; Sik ;   et al. | 2014-09-11 |
Termination Trench For Power Mosfet Applications App 20140239388 - Lee; Yeeheng ;   et al. | 2014-08-28 |
Method of Making MOSFET Integrated with Schottky Diode with Simplified One-time Top-Contact Trench Etching App 20140235024 - Pan; Ji ;   et al. | 2014-08-21 |
Fabrication of MOS device with schottky barrier controlling layer Grant 8,809,143 - Bhalla , et al. August 19, 2 | 2014-08-19 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Grant 8,785,278 - Yilmaz , et al. July 22, 2 | 2014-07-22 |
Method Of Making Mosfet Integrated With Schottky Diode With Simplified One-time Top-contact Trench Etching App 20140179074 - Pan; Ji ;   et al. | 2014-06-26 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Grant 8,748,268 - Pan , et al. June 10, 2 | 2014-06-10 |
Fabrication of MOS device with integrated Schottky diode in active region contact trench Grant 8,728,890 - Bhalla , et al. May 20, 2 | 2014-05-20 |
Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application Grant 8,692,322 - Pan , et al. April 8, 2 | 2014-04-08 |
Junction barrier Schottky (JBS) with floating islands Grant 8,680,643 - Pan , et al. March 25, 2 | 2014-03-25 |
Mosfet Device With Reduced Breakdown Voltage App 20140054687 - Pan; Ji ;   et al. | 2014-02-27 |
Integrated snubber in a single poly MOSFET Grant 8,643,071 - Pan , et al. February 4, 2 | 2014-02-04 |
Integrated Snubber In A Single Poly Mosfet App 20130334599 - Pan; Ji ;   et al. | 2013-12-19 |
Fabrication of MOSFET device with reduced breakdown voltage Grant 8,586,435 - Pan , et al. November 19, 2 | 2013-11-19 |
Fabrication Of Mos Device With Integrated Schottky Diode In Active Region Contact Trench App 20130280870 - Bhalla; Anup ;   et al. | 2013-10-24 |
Fabrication Of Mosfet Device With Reduced Breakdown Voltage App 20130203224 - Pan; Ji ;   et al. | 2013-08-08 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact App 20130200451 - Yilmaz; Hamza ;   et al. | 2013-08-08 |
Fabrication Of Mos Device With Schottky Barrier Controlling Layer App 20130203225 - Bhalla; Anup ;   et al. | 2013-08-08 |
MOS device with varying contact trench lengths Grant 8,450,794 - Bhalla , et al. May 28, 2 | 2013-05-28 |
MOS device with Schottky barrier controlling layer Grant 8,362,547 - Bhalla , et al. January 29, 2 | 2013-01-29 |
MOSFET device with reduced breakdown voltage Grant 8,362,552 - Pan , et al. January 29, 2 | 2013-01-29 |
Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging Grant 8,362,585 - Bhalla , et al. January 29, 2 | 2013-01-29 |
Junction Barrier Schottky Diode With Enforced Upper Contact Structure And Method For Robust Packaging App 20130015550 - Bhalla; Anup ;   et al. | 2013-01-17 |
Mos Device With Low Injection Diode App 20130009242 - Bhalla; Anup ;   et al. | 2013-01-10 |
Flexible Crss Adjustment In A Sgt Mosfet To Smooth Waveforms And To Avoid Emi In Dc-dc Application App 20130001683 - Pan; Ji ;   et al. | 2013-01-03 |
Junction Barrier Schottky (jbs) With Floating Islands App 20120306043 - Pan; Ji ;   et al. | 2012-12-06 |
MOS device with low injection diode Grant 8,283,723 - Bhalla , et al. October 9, 2 | 2012-10-09 |
Junction barrier Schottky (JBS) with floating islands Grant 8,227,330 - Pan , et al. July 24, 2 | 2012-07-24 |
Mos Device With Varying Contact Trench Lengths App 20120080751 - Bhalla; Anup ;   et al. | 2012-04-05 |
Integrated MOSFET Device and Method with Reduced Kelvin Contact Impedance and Breakdown Voltage App 20120068262 - Pan; Ji | 2012-03-22 |
MOS device with integrated schottky diode in active region contact trench Grant 8,093,651 - Bhalla , et al. January 10, 2 | 2012-01-10 |
Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device Grant 8,053,808 - Su , et al. November 8, 2 | 2011-11-08 |
MOSFET device with reduced breakdown voltage App 20110042727 - Pan; Ji ;   et al. | 2011-02-24 |
Junction barrier Schottky (JBS) with floating islands App 20100155876 - Pan; Ji ;   et al. | 2010-06-24 |
Junction barrier Schottky (JBS) with floating islands Grant 7,671,439 - Pan , et al. March 2, 2 | 2010-03-02 |
MOS device with low injection diode App 20090065861 - Bhalla; Anup ;   et al. | 2009-03-12 |
MOS device with schottky barrier controlling layer App 20090065814 - Bhalla; Anup ;   et al. | 2009-03-12 |
MOS device with integrated schottky diode in active region contact trench App 20090065855 - Bhalla; Anup ;   et al. | 2009-03-12 |
Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device App 20080290367 - Su; Yi ;   et al. | 2008-11-27 |
Junction barrier schottky (JBS) with floating islands App 20070075392 - Pan; Ji ;   et al. | 2007-04-05 |