Patent | Date |
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Magnetic dynamic random access nonvolatile semiconductor memory (MRAM) Grant 8,933,519 - Pan January 13, 2 | 2015-01-13 |
Replacement metal gate transistors with reduced gate oxide leakage Grant 8,753,943 - Pan , et al. June 17, 2 | 2014-06-17 |
Strain enhanced semiconductor devices and methods for their fabrication Grant 8,124,473 - Pan , et al. February 28, 2 | 2012-02-28 |
Shallow trench isolation process and structure with minimized strained silicon consumption Grant 7,732,336 - Xiang , et al. June 8, 2 | 2010-06-08 |
Shallow trench isolation process and structure with minimized strained silicon consumption Grant 7,462,549 - Xiang , et al. December 9, 2 | 2008-12-09 |
Strain Enhanced Semiconductor Devices And Methods For Their Fabrication App 20080251851 - PAN; James N. ;   et al. | 2008-10-16 |
Shallow Trench Isolation Process And Structure With Minimized Strained Silicon Consumption App 20080213952 - Xiang; Qi ;   et al. | 2008-09-04 |
Low-power multiple-channel fully depleted quantum well CMOSFETs Grant 7,253,484 - Pan , et al. August 7, 2 | 2007-08-07 |
Low-power multiple-channel fully depleted quantum well CMOSFETs App 20060278938 - Pan; James N. ;   et al. | 2006-12-14 |
Method of fabricating an integrated circuit channel region Grant 7,138,302 - Xiang , et al. November 21, 2 | 2006-11-21 |
Formation of finFET using a sidewall epitaxial layer Grant 7,078,299 - Maszara , et al. July 18, 2 | 2006-07-18 |
Low-power multiple-channel fully depleted quantum well CMOSFETs Grant 7,074,657 - Pan , et al. July 11, 2 | 2006-07-11 |
Method for determining metal work function by formation of Schottky diodes with shadow mask Grant 7,045,384 - Pan , et al. May 16, 2 | 2006-05-16 |
Engineered metal gate electrode Grant 7,033,888 - Pan , et al. April 25, 2 | 2006-04-25 |
Strained silicon semiconductor on insulator MOSFET Grant 7,033,869 - Xiang , et al. April 25, 2 | 2006-04-25 |
Method of growing as a channel region to reduce source/drain junction capacitance Grant 6,955,969 - Djomehri , et al. October 18, 2 | 2005-10-18 |
Semiconductor on insulator MOSFET having strained silicon channel Grant 6,943,087 - Xiang , et al. September 13, 2 | 2005-09-13 |
Replacement gate strained silicon finFET process Grant 6,936,516 - Goo , et al. August 30, 2 | 2005-08-30 |
Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift Grant 6,929,992 - Djomehri , et al. August 16, 2 | 2005-08-16 |
Shallow trench isolation process and structure with minimized strained silicon consumption App 20050151222 - Xiang, Qi ;   et al. | 2005-07-14 |
Method of fabricating a strained silicon channel FinFET App 20050153486 - Xiang, Qi ;   et al. | 2005-07-14 |
Strained silicon MOSFETs having improved thermal dissipation Grant 6,900,143 - Pan , et al. May 31, 2 | 2005-05-31 |
Low-power multiple-channel fully depleted quantum well CMOSFETs App 20050104140 - Pan, James N. ;   et al. | 2005-05-19 |
One step deposition method for high-k dielectric and metal gate electrode Grant 6,893,910 - Woo , et al. May 17, 2 | 2005-05-17 |
Method of growing as a channel region to reduce source/drain junction capicitance App 20050048743 - Djomehri, Ihsan J. ;   et al. | 2005-03-03 |
Formation Of Finfet Using A Sidewall Epitaxial Layer App 20050048727 - Maszara, Witold P. ;   et al. | 2005-03-03 |
Methods for fabricating CMOS-compatible lateral bipolar junction transistors Grant 6,861,325 - Pan , et al. March 1, 2 | 2005-03-01 |
Self aligned double gate transistor having a strained channel region and process therefor Grant 6,855,982 - Xiang , et al. February 15, 2 | 2005-02-15 |
Engineered metal gate electrode App 20040175910 - Pan, James N. ;   et al. | 2004-09-09 |
Engineered metal gate electrode Grant 6,727,560 - Pan , et al. April 27, 2 | 2004-04-27 |