Pan; Hsien-Yu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Pan; Hsien-Yu.The latest application filed is for "method and system to balance ground bounce".
Company Profile
25.27.29
- Pan; Hsien-Yu - Hsinchu TW
- Pan; Hsien-Yu - Hsinchu City TW
- PAN; Hsien-Yu - Hsinchu City 300 TW
- Pan; Hsien-Yu - Hsin-Chu TW
- Pan; Hsien-Yu - Pingtung County TW
Patent Activity
| Patent | Date |
|---|---|
| Static random access memory with write assist circuit Grant 11,423,977 - Fujiwara , et al. August 23, 2 | 2022-08-23 |
| Multi word line assertion Grant 11,322,198 - Fujiwara , et al. May 3, 2 | 2022-05-03 |
| Memory cell Grant 11,176,997 - Fujiwara , et al. November 16, 2 | 2021-11-16 |
| Method And System To Balance Ground Bounce App 20210350849 - Fujiwara; Hidehiro ; et al. | 2021-11-11 |
| Semiconductor Chip Having Memory And Logic Cells App 20210343317 - Fujiwara; Hidehiro ; et al. | 2021-11-04 |
| Memory Array Circuit And Method Of Manufacturing Same App 20210272967 - FUJIWARA; Hidehiro ; et al. | 2021-09-02 |
| Method and system to balance ground bounce Grant 11,074,966 - Fujiwara , et al. July 27, 2 | 2021-07-27 |
| Memory Array Circuit And Method Of Manufacturing Same App 20210217742 - FUJIWARA; Hidehiro ; et al. | 2021-07-15 |
| Semiconductor chip having memory and logic cells Grant 11,062,739 - Fujiwara , et al. July 13, 2 | 2021-07-13 |
| Memory Cell App 20210201999 - Fujiwara; Hidehiro ; et al. | 2021-07-01 |
| Memory cell and method of manufacturing the same Grant 11,018,142 - Fujiwara , et al. May 25, 2 | 2021-05-25 |
| SRAM cell for interleaved wordline scheme Grant 10,971,217 - Fujiwara , et al. April 6, 2 | 2021-04-06 |
| Multi Word Line Assertion App 20210098054 - Fujiwara; Hidehiro ; et al. | 2021-04-01 |
| Memory array circuit and method of manufacturing the same Grant 10,964,683 - Fujiwara , et al. March 30, 2 | 2021-03-30 |
| Memory cell Grant 10,964,389 - Fujiwara , et al. March 30, 2 | 2021-03-30 |
| Memory device Grant 10,943,667 - Fujiwara , et al. March 9, 2 | 2021-03-09 |
| Multi word line assertion Grant 10,892,008 - Fujiwara , et al. January 12, 2 | 2021-01-12 |
| Static Random Access Memory with Write Assist Circuit App 20200411084 - FUJIWARA; Hidehiro ; et al. | 2020-12-31 |
| Semiconductor Chip App 20200411063 - Fujiwara; Hidehiro ; et al. | 2020-12-31 |
| Sram Cell For Interleaved Wordline Scheme App 20200372951 - Fujiwara; Hidehiro ; et al. | 2020-11-26 |
| Variation tolerant read assist circuit for SRAM Grant 10,832,765 - Fujiwara , et al. November 10, 2 | 2020-11-10 |
| Memory Cell App 20200321054 - Fujiwara; Hidehiro ; et al. | 2020-10-08 |
| SRAM cell for interleaved wordline scheme Grant 10,770,131 - Fujiwara , et al. Sep | 2020-09-08 |
| Static random access memory with write assist circuit Grant 10,734,066 - Fujiwara , et al. | 2020-08-04 |
| Memory cell Grant 10,714,181 - Fujiwara , et al. | 2020-07-14 |
| Method And System To Balance Ground Bounce App 20200135268 - Fujiwara; Hidehiro ; et al. | 2020-04-30 |
| Memory Device App 20200135288 - Fujiwara; Hidehiro ; et al. | 2020-04-30 |
| Memory Cell And Method Of Manufacturing The Same App 20200020699 - FUJIWARA; Hidehiro ; et al. | 2020-01-16 |
| Variation Tolerant Read Assist Circuit for SRAM App 20200005858 - FUJIWARA; Hidehiro ; et al. | 2020-01-02 |
| Multi Word Line Assertion App 20190385671 - Fujiwara; Hidehiro ; et al. | 2019-12-19 |
| Method of providing layout design of SRAM cell Grant 10,510,739 - Fujiwara , et al. Dec | 2019-12-17 |
| Sram Cell For Interleaved Wordline Scheme App 20190237134 - Fujiwara; Hidehiro ; et al. | 2019-08-01 |
| Layout design for manufacturing a memory cell Grant 10,276,579 - Fujiwara , et al. | 2019-04-30 |
| SRAM cell for interleaved wordline scheme Grant 10,276,231 - Fujiwara , et al. | 2019-04-30 |
| Memory Array Circuit And Method Of Manufacturing The Same App 20190067264 - FUJIWARA; Hidehiro ; et al. | 2019-02-28 |
| Static Random Access Memory With Write Assist Circuit App 20190035455 - FUJIWARA; Hidehiro ; et al. | 2019-01-31 |
| Method Of Providing Layout Design Of Sram Cell App 20180166433 - FUJIWARA; HIDEHIRO ; et al. | 2018-06-14 |
| Sram Cell For Interleaved Wordline Scheme App 20180158510 - Fujiwara; Hidehiro ; et al. | 2018-06-07 |
| Memory Cell App 20180151226 - FUJIWARA; Hidehiro ; et al. | 2018-05-31 |
| SRAM cell for interleaved wordline scheme Grant 9,886,996 - Fujiwara , et al. February 6, 2 | 2018-02-06 |
| Layout scheme and method for forming device cells in semiconductor devices Grant 9,853,035 - Pan , et al. December 26, 2 | 2017-12-26 |
| Layout Design for Manufacturing a Memory Cell App 20170271342 - Fujiwara; Hidehiro ; et al. | 2017-09-21 |
| Sram Cell For Interleaved Wordline Scheme App 20170110181 - Fujiwara; Hidehiro ; et al. | 2017-04-20 |
| Layout Scheme And Method For Forming Device Cells In Semiconductor Devices App 20150118803 - PAN; Hsien-Yu ; et al. | 2015-04-30 |
| Layout scheme and method for forming device cells in semiconductor devices Grant 8,928,113 - Pan , et al. January 6, 2 | 2015-01-06 |
| Semiconductor memories Grant 8,576,655 - Chan , et al. November 5, 2 | 2013-11-05 |
| Sense amplifier with low sensing margin and high device variation tolerance Grant 8,570,823 - Chen , et al. October 29, 2 | 2013-10-29 |
| Semiconductor Memories App 20120327704 - CHAN; Wei Min ; et al. | 2012-12-27 |
| Layout Scheme And Method For Forming Device Cells In Semiconductor Devices App 20120256235 - Pan; Hsien-Yu ; et al. | 2012-10-11 |
| Distributed VDC for SRAM memory Grant 8,077,517 - Wang , et al. December 13, 2 | 2011-12-13 |
| Sense Amplifier With Low Sensing Margin And High Device Variation Tolerance App 20110199847 - CHEN; Yen-Huei ; et al. | 2011-08-18 |
| Distributed VDC for SRAM Memory App 20100157692 - Wang; Li-Wen ; et al. | 2010-06-24 |
| Low-power reading reference circuit for split-gate flash memory App 20070133275 - Chang; Meng-Fan ; et al. | 2007-06-14 |
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