Palmour; John W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Palmour; John W..The latest application filed is for "methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen".

Company Profile

0.36.13

Palmour; John W. - Cary NC
Palmour; John W. - Raleigh NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 8,119,539 - Das , et al. February 21, 2	2012-02-21
Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen App 20100009545 - Das; Mrinal K. ; et al.	2010-01-14
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,615,801 - Ryu , et al. November 10, 2	2009-11-10
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 7,572,741 - Das , et al. August 11, 2	2009-08-11
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen App 20090004883 - Das; Mrinal K. ; et al.	2009-01-01
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Grant 7,414,268 - Ryu , et al. August 19, 2	2008-08-19
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,391,057 - Ryu , et al. June 24, 2	2008-06-24
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261345 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261347 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261348 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261346 - Ryu; Sei-Hyung ; et al.	2006-11-23
Manufacturing methods for large area silicon carbide devices Grant 7,135,359 - Agarwal , et al. November 14, 2	2006-11-14
Methods of fabricating silicon carbide metal-semiconductor field effect transistors Grant 7,067,361 - Allen , et al. June 27, 2	2006-06-27
Methods of fabricating high voltage, high temperature capacitor and interconnection structures Grant 6,998,322 - Das , et al. February 14, 2	2006-02-14
High voltage, high temperature capacitor and interconnection structures Grant 6,972,436 - Das , et al. December 6, 2	2005-12-06
Silicon Carbide Power Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel And Methods Of Fabricating Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel Grant 6,956,238 - Ryu , et al. October 18, 2	2005-10-18
Manufacturing methods for large area silicon carbide devices App 20040206976 - Agarwal, Anant ; et al.	2004-10-21
Methods of fabricating silicon carbide metal-semiconductor field effect transistors App 20040159865 - Allen, Scott T. ; et al.	2004-08-19
Large area silicon carbide devices Grant 6,770,911 - Agarwal , et al. August 3, 2	2004-08-03
Method of N2O growth of an oxide layer on a silicon carbide layer Grant 6,767,843 - Lipkin , et al. July 27, 2	2004-07-27
Silicon carbide metal-semiconductor field effect transistors Grant 6,686,616 - Allen , et al. February 3, 2	2004-02-03
Methods of fabricating high voltage, high temperature capacitor and interconnection structures App 20030160274 - Das, Mrinal Kanti ; et al.	2003-08-28
Large area silicon carbide devices App 20030047748 - Agarwal, Anant ; et al.	2003-03-13
Large area silicon carbide devices and manufacturing methods therefor Grant 6,514,779 - Ryu , et al. February 4, 2	2003-02-04
Method of N2O growth of an oxide layer on a silicon carbide layer App 20020072247 - Lipkin, Lori A. ; et al.	2002-06-13
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel App 20020038891 - Ryu, Sei-Hyung ; et al.	2002-04-04
High voltage, high temperature capacitor structures and methods of fabricating same App 20020030191 - Das, Mrinal Kanti ; et al.	2002-03-14
Silicon carbide CMOS devices Grant 6,344,663 - Slater, Jr. , et al. February 5, 2	2002-02-05
Latch-up free power MOS-bipolar transistor Grant 6,121,633 - Singh , et al. September 19, 2	2000-09-19
Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Grant 6,107,142 - Suvorov , et al. August 22, 2	2000-08-22
Methods of fabricating silicon carbide power devices by controlled annealing Grant 6,100,169 - Suvorov , et al. August 8, 2	2000-08-08
Process for reducing defects in oxide layers on silicon carbide Grant 5,972,801 - Lipkin , et al. October 26, 1	1999-10-26
Silicon carbide metal-insulator semiconductor field effect transistor Grant 5,831,288 - Singh , et al. November 3, 1	1998-11-03
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,776,837 - Palmour July 7, 1	1998-07-07
Silicon carbide metal-insulator semiconductor field effect transistor Grant 5,719,409 - Singh , et al. February 17, 1	1998-02-17
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,629,531 - Palmour May 13, 1	1997-05-13
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,612,260 - Palmour March 18, 1	1997-03-18
Silicon carbide thyristor Grant 5,539,217 - Edmond , et al. July 23, 1	1996-07-23
Power MOSFET in silicon carbide Grant 5,506,421 - Palmour April 9, 1	1996-04-09
Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate Grant 5,465,249 - Cooper, Jr. , et al. November 7, 1	1995-11-07
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,459,107 - Palmour October 17, 1	1995-10-17
Method of forming platinum ohmic contact to p-type silicon carbide Grant 5,409,859 - Glass , et al. April 25, 1	1995-04-25
Platinum ohmic contact to p-type silicon carbide Grant 5,323,022 - Glass , et al. June 21, 1	1994-06-21
High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide Grant 5,270,554 - Palmour December 14, 1	1993-12-14
Junction field-effect transistor formed in silicon carbide Grant 5,264,713 - Palmour November 23, 1	1993-11-23
Dry etching of silicon carbide Grant 4,981,551 - Palmour January 1, 1	1991-01-01
Method of preparing silicon carbide surfaces for crystal growth Grant 4,946,547 - Palmour , et al. August 7, 1	1990-08-07
Bipolar junction transistor on silicon carbide Grant 4,945,394 - Palmour , et al. July 31, 1	1990-07-31
Metal-insulator-semiconductor capacitor formed on silicon carbide Grant 4,875,083 - Palmour October 17, 1	1989-10-17

Company Registrations

SEC

0001182185

PALMOUR JOHN W

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.