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Apparatus having a layer of material configured as a reservoir having an interior capable of holding a liquid
Grant 7,659,591 - Aksyuk , et al. February 9, 2 | 2010-02-09 |
Structure For Protecting Features During The Removal Of Sacrificial Materials
App 20080316563 - Aksyuk; Vladimir A. ; et al. | 2008-12-25 |
Process for manufacturing an apparatus that protects features during the removal of sacrificial materials
Grant 7,452,741 - Aksyuk , et al. November 18, 2 | 2008-11-18 |
Light-mediated micro-chemical reactors
Grant 7,435,391 - Pai , et al. October 14, 2 | 2008-10-14 |
Structure For Protecting Feataures During The Removal Of Sacrificial Materials And A Method Of Manufacture Therefor
App 20070292981 - Aksyuk; Vladimir A. ; et al. | 2007-12-20 |
Wafer-based ion traps
Grant 7,081,623 - Pai , et al. July 25, 2 | 2006-07-25 |
Mass spectrometers on wafer-substrates
Grant 6,967,326 - Pai , et al. November 22, 2 | 2005-11-22 |
Mass spectrometers on wafer-substrates
App 20050189488 - Pai, Chien-Shing ; et al. | 2005-09-01 |
Wafer-based ion traps
App 20050061767 - Pai, Chien-Shing ; et al. | 2005-03-24 |
Semiconductor device having a low dielectric constant dielectric material and process for its manufacture
Grant 6,852,648 - Nalamasu , et al. February 8, 2 | 2005-02-08 |
Devices and method of their manufacture
App 20040245216 - Pai, Chien-Shing ; et al. | 2004-12-09 |
Light-mediated micro-chemical reactors
App 20040234424 - Pai, Chien-Shing ; et al. | 2004-11-25 |
Semiconductor device with tapered gate and process for fabricating the device
App 20040137688 - Chang, Chorng-Ping ; et al. | 2004-07-15 |
Semiconductor device having a low dielectric constant dielectric material and process for its manufacture
App 20030207595 - Ralamasu, Omkaram ; et al. | 2003-11-06 |
Process for device fabrication
Grant 6,566,224 - Chang , et al. May 20, 2 | 2003-05-20 |
Device comprising thermally stable, low dielectric constant material
Grant 6,469,390 - Chang , et al. October 22, 2 | 2002-10-22 |
Process of making semiconductor device having regions of insulating material formed in a semiconductor substrate
Grant 6,350,659 - Liu , et al. February 26, 2 | 2002-02-26 |
Device Comprising Thermally Stable, Low Dielectric Constant Material
App 20020000669 - CHANG, CHORNG-PING ; et al. | 2002-01-03 |
Article comprising fluorinated diamond-like carbon and method for fabricating article
Grant 6,312,766 - Pai , et al. November 6, 2 | 2001-11-06 |
Article comprising fluorinated amorphous carbon and method for fabricating article
Grant 6,149,778 - Jin , et al. November 21, 2 | 2000-11-21 |
Process for fabricating integrating circuits
Grant 5,616,518 - Foo , et al. April 1, 1 | 1997-04-01 |
Method of forming interlevel dielectric for integrated circuits
Grant 5,344,797 - Pai , et al. September 6, 1 | 1994-09-06 |
Neutral impurities to increase lifetime of operation of semiconductor devices
Grant 5,134,447 - Ng , et al. July 28, 1 | 1992-07-28 |
Method of forming oxide layers by bias ECR plasma deposition
Grant 5,124,014 - Foo , et al. * June 23, 1 | 1992-06-23 |
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