| Patent | Date |
|---|
Igbt Light Load Efficiency
App 20220262898 - Bobde; Madhur ; et al. | 2022-08-18 |
Improving IGBT light load efficiency
Grant 11,342,410 - Bobde , et al. May 24, 2 | 2022-05-24 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20210273046 - Zhang; Lei ; et al. | 2021-09-02 |
Method For Forming Super-junction Corner And Termination Structure With Graded Sidewalls
App 20210257461 - Bobde; Madhur ; et al. | 2021-08-19 |
Super-junction corner and termination structure with graded sidewalls
Grant 11,038,022 - Bobde , et al. June 15, 2 | 2021-06-15 |
Semiconductor device incorporating epitaxial layer field stop zone
Grant 11,031,465 - Zhang , et al. June 8, 2 | 2021-06-08 |
Improving Igbt Light Load Efficiency
App 20210098569 - Bobde; Madhur ; et al. | 2021-04-01 |
Combined IGBT and superjunction MOSFET device with tuned switching speed
Grant 10,931,276 - Suh , et al. February 23, 2 | 2021-02-23 |
Semiconductor device and method of forming including superjunction structure formed using angled implant process
Grant 10,755,931 - Padmanabhan , et al. A | 2020-08-25 |
Super-junction Corner And Termination Structure With Graded Sidewalls
App 20200161431 - Bobde; Madhur ; et al. | 2020-05-21 |
SGT superjunction MOSFET structure
Grant 10,644,102 - Padmanabhan , et al. | 2020-05-05 |
Super-junction corner and termination structure with improved breakdown and robustness
Grant 10,580,868 - Bobde , et al. | 2020-03-03 |
Method for forming a lateral super-junction MOSFET device and termination structure
Grant 10,446,679 - Bobde , et al. Oc | 2019-10-15 |
Super-junction Corner And Termination Structure With Improved Breakdown And Robustness
App 20190305088 - Bobde; Madhur ; et al. | 2019-10-03 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20190273131 - Zhang; Lei ; et al. | 2019-09-05 |
Semiconductor Device And Method Of Forming Including Superjunction Structure Formed Using Angled Implant Process
App 20190214261 - Padmanabhan; Karthik ; et al. | 2019-07-11 |
Novel Sgt Superjunction Mosfet Structure
App 20190206988 - Padmanabhan; Karthik ; et al. | 2019-07-04 |
Method For Forming A Lateral Super-junction Mosfet Device And Termination Structure
App 20190165169 - Bobde; Madhur ; et al. | 2019-05-30 |
Semiconductor device including superjunction structure formed using angled implant process
Grant 10,276,387 - Padmanabhan , et al. | 2019-04-30 |
Method for forming a lateral super-junction MOSFET device and termination structure
Grant 10,243,072 - Bobde , et al. | 2019-03-26 |
Semiconductor Device Incorporating Epitaxial Layer Field Stop Zone
App 20190006461 - Zhang; Lei ; et al. | 2019-01-03 |
Method For Forming A Lateral Super-junction Mosfet Device And Termination Structure
App 20180254342 - Bobde; Madhur ; et al. | 2018-09-06 |
Lateral super-junction MOSFET device and termination structure
Grant 9,991,380 - Bobde , et al. June 5, 2 | 2018-06-05 |
Lateral Super-junction Mosfet Device And Termination Structure
App 20170365710 - Bobde; Madhur ; et al. | 2017-12-21 |
Lateral super-junction MOSFET device and termination structure
Grant 9,722,073 - Bobde , et al. August 1, 2 | 2017-08-01 |
Semiconductor Device Including Superjunction Structure Formed Using Angled Implant Process
App 20170148632 - Padmanabhan; Karthik ; et al. | 2017-05-25 |
Semiconductor device including superjunction structure formed using angled implant process
Grant 9,595,609 - Padmanabhan , et al. March 14, 2 | 2017-03-14 |
Lateral Super-junction Mosfet Device And Termination Structure
App 20160380097 - Bobde; Madhur ; et al. | 2016-12-29 |
Normally on high voltage switch
Grant 9,530,885 - Bobde , et al. December 27, 2 | 2016-12-27 |
Termination design for nanotube MOSFET
Grant 9,508,805 - Guan , et al. November 29, 2 | 2016-11-29 |
Method for forming lateral super-junction structure
Grant 9,450,045 - Bobde , et al. September 20, 2 | 2016-09-20 |
Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
Grant 9,397,154 - Padmanabhan , et al. July 19, 2 | 2016-07-19 |
Lateral super-junction MOSFET device and termination structure
Grant 9,312,381 - Bobde , et al. April 12, 2 | 2016-04-12 |
Termination Design By Metal Strapping Guard Ring Trenches Shorted To A Body Region To Shrink Termination Area
App 20160099307 - Padmanabhan; Karthik ; et al. | 2016-04-07 |
Semiconductor Device Including Superjunction Structure Formed Using Angled Implant Process
App 20160087095 - Padmanabhan; Karthik ; et al. | 2016-03-24 |
Semiconductor device including superjunction structure formed using angled implant process
Grant 9,171,949 - Padmanabhan , et al. October 27, 2 | 2015-10-27 |
Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
Grant 9,153,653 - Padmanabhan , et al. October 6, 2 | 2015-10-06 |
Normally On High Voltage Switch
App 20150279989 - Bobde; Madhur ; et al. | 2015-10-01 |
Normally on high voltage switch
Grant 9,082,790 - Bobde , et al. July 14, 2 | 2015-07-14 |
Termination Design By Metal Strapping Guard Ring Trenches Shorted To A Body Region To Shrink Termination Area
App 20150162410 - Padmanabhan; Karthik ; et al. | 2015-06-11 |
Normally On High Voltage Switch
App 20150021682 - Bobde; Madhur ; et al. | 2015-01-22 |
High voltage fast recovery trench diode
Grant 8,907,414 - Hu , et al. December 9, 2 | 2014-12-09 |
Termination Design For Nanotube Mosfet
App 20140332919 - Guan; Lingpeng ; et al. | 2014-11-13 |
High Voltage Fast Recovery Trench Diode
App 20140239436 - Hu; Jun ; et al. | 2014-08-28 |
High voltage fast recovery trench diode
Grant 8,710,585 - Hu , et al. April 29, 2 | 2014-04-29 |
| 