Ozeki; Yoshihiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ozeki; Yoshihiko.The latest application filed is for "receiving device including impedance control circuit and semiconductor device including impedance control circuit".

Company Profile

0.15.12

Ozeki; Yoshihiko - Okazaki JP
Ozeki; Yoshihiko - Nukata-gun JP
Ozeki; Yoshihiko - Okazaki-city JP
Ozeki; Yoshihiko - Nukata JP
Ozeki; Yoshihiko - Anjo JP
Ozeki; Yoshihiko - Kariya JP
Ozeki, Yoshihiko - Anjo-City JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same Grant 8,710,568 - Ozeki , et al. April 29, 2	2014-04-29
Receiving device including impedance control circuit and semiconductor device including impedance control circuit Grant 8,396,164 - Suzuki , et al. March 12, 2	2013-03-12
Signal transmission circuit Grant 8,290,066 - Mori , et al. October 16, 2	2012-10-16
Semiconductor device having IGBT and diode Grant 8,102,025 - Ozeki , et al. January 24, 2	2012-01-24
Semiconductor device and method for manufacturing same Grant 8,026,572 - Ozeki , et al. September 27, 2	2011-09-27
Receiving device including impedance control circuit and semiconductor device including impedance control circuit App 20100177829 - Suzuki; Youichirou ; et al.	2010-07-15
Semiconductor device having IGBT element Grant 7,692,221 - Ozeki , et al. April 6, 2	2010-04-06
Trench gate type semiconductor device Grant 7,667,269 - Tsuzuki , et al. February 23, 2	2010-02-23
Signal transmission circuit App 20090279617 - Mori; Hiroyuki ; et al.	2009-11-12
Semiconductor device and method of manufacturing the same App 20090108288 - Ozeki; Yoshihiko ; et al.	2009-04-30
Trench gate type insulated gate bipolar transistor Grant 7,498,658 - Ozeki , et al. March 3, 2	2009-03-03
Semiconductor device having IGBT and diode Grant 7,456,484 - Ozeki , et al. November 25, 2	2008-11-25
Semiconductor device and method for manufacturing same App 20080135932 - Ozeki; Yoshihiko ; et al.	2008-06-12
Semiconductor device having IGBT element App 20070215898 - Ozeki; Yoshihiko ; et al.	2007-09-20
Semiconductor device having IGBT and diode App 20070200138 - Ozeki; Yoshihiko ; et al.	2007-08-30
Semiconductor device having IGBT and diode App 20070158680 - Ozeki; Yoshihiko ; et al.	2007-07-12
Trench gate type semiconductor device App 20060244053 - Tsuzuki; Yukio ; et al.	2006-11-02
Trench gate type insulated gate bipolar transistor App 20060244104 - Ozeki; Yoshihiko ; et al.	2006-11-02
Semiconductor equipment having a pair of heat radiation plates App 20060055056 - Miura; Shoji ; et al.	2006-03-16
Semiconductor device with peripheral portion for withstanding surge voltage Grant 6,765,266 - Ozeki , et al. July 20, 2	2004-07-20
Vertical type MOSFET Grant 6,603,173 - Okabe , et al. August 5, 2	2003-08-05
Semiconductor device with peripheral portion for withstanding surge voltage App 20030107102 - Ozeki, Yoshihiko ; et al.	2003-06-12
Method for manufacturing semiconductor device with power semiconductor element and diode App 20020022352 - Ozeki, Yoshihiko ; et al.	2002-02-21
Method of manufacturing a semiconductor device having an oxidation process for selectively forming an oxide film Grant 6,316,300 - Ozeki , et al. November 13, 2	2001-11-13
Insulated gate field effect transistor and manufacturing method of the same Grant 6,281,546 - Ozeki , et al. August 28, 2	2001-08-28

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