loadpatents
name:-0.029884815216064
name:-0.027072906494141
name:-0.0047681331634521
Oxland; Richard Kenneth Patent Filings

Oxland; Richard Kenneth

Patent Applications and Registrations

Patent applications and USPTO patent grants for Oxland; Richard Kenneth.The latest application filed is for "nanowire field effect transistor device having a replacement gate".

Company Profile
4.28.31
  • Oxland; Richard Kenneth - Brussels BE
  • Oxland; Richard Kenneth - Leuven BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Elongated semiconductor structure planarization
Grant 10,861,933 - Oxland , et al. December 8, 2
2020-12-08
Nanowire field effect transistor device having a replacement gate
Grant 10,522,621 - Oxland Dec
2019-12-31
FinFET with two fins on STI
Grant 10,510,853 - Vellianitis , et al. Dec
2019-12-17
Nanowire Field Effect Transistor Device Having A Replacement Gate
App 20190229186 - OXLAND; Richard Kenneth
2019-07-25
FinFET with Two Fins on STI
App 20190131413 - Vellianitis; Georgios ;   et al.
2019-05-02
Nanowire field effect transistor having a metal gate surrounding semiconductor nanowire
Grant 10,276,660 - Oxland
2019-04-30
Elongated Semiconductor Structure Planarization
App 20190074355 - Oxland; Richard Kenneth ;   et al.
2019-03-07
FinFET with two fins on STI
Grant 10,164,031 - Vellianitis , et al. Dec
2018-12-25
Heterostructures for semiconductor devices and methods of forming the same
Grant 10,164,024 - Holland , et al. Dec
2018-12-25
Elongated semiconductor structure planarization
Grant 10,121,858 - Oxland , et al. November 6, 2
2018-11-06
Vertical CMOS structure and method
Grant 10,049,946 - Oxland August 14, 2
2018-08-14
Nanowire Field Effect Transistor Device Having A Replacement Gate
App 20180174821 - OXLAND; Richard Kenneth
2018-06-21
Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer
Grant 9,911,599 - Oxland March 6, 2
2018-03-06
Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer
Grant 9,887,272 - Oxland , et al. February 6, 2
2018-02-06
Semiconductor devices and FinFET devices
Grant 9,768,263 - Holland , et al. September 19, 2
2017-09-19
III-V compound semiconductor device having dopant layer and method of making the same
Grant 9,685,514 - Oxland , et al. June 20, 2
2017-06-20
Nickelide source/drain structures for CMOS transistors
Grant 9,680,027 - Oxland , et al. June 13, 2
2017-06-13
Elongated Semiconductor Structure Planarization
App 20170125518 - Oxland; Richard Kenneth ;   et al.
2017-05-04
Fin Structure For A Finfet Device
App 20170069728 - Vellianitis; Georgios ;   et al.
2017-03-09
Graded heterojunction nanowire device
Grant 9,590,084 - Oxland March 7, 2
2017-03-07
Vertical CMOS Structure and Method
App 20170033021 - Oxland; Richard Kenneth
2017-02-02
Nanowire Field Effect Transistor Device Having a Replacement Gate
App 20170025538 - Oxland; Richard Kenneth
2017-01-26
Forming fins on the sidewalls of a sacrificial fin to form a FinFET
Grant 9,502,541 - Vellianitis , et al. November 22, 2
2016-11-22
Vertical CMOS structure and method
Grant 9,472,551 - Oxland October 18, 2
2016-10-18
Nanowire field effect transistor device having a replacement gate
Grant 9,472,618 - Oxland October 18, 2
2016-10-18
Heterostructures for Semiconductor Devices and Methods of Forming the Same
App 20160300911 - Holland; Martin Christopher ;   et al.
2016-10-13
Vertical Cmos Structure And Method
App 20160240533 - Oxland; Richard Kenneth
2016-08-18
Semiconductor Devices And Finfet Devices
App 20160225858 - Holland; Martin Christopher ;   et al.
2016-08-04
Transistors, semiconductor devices, and methods of manufacture thereof
Grant 9,406,791 - Doornbos , et al. August 2, 2
2016-08-02
III-V compound semiconductor device having metal contacts and method of making the same
Grant 9,391,153 - Oxland July 12, 2
2016-07-12
Heterostructures for semiconductor devices and methods of forming the same
Grant 9,385,198 - Holland , et al. July 5, 2
2016-07-05
Methods of forming semiconductor devices and FinFET devices, and FinFET devices
Grant 9,355,920 - Holland , et al. May 31, 2
2016-05-31
Graded Heterojunction Nanowire Device
App 20160149001 - Oxland; Richard Kenneth
2016-05-26
Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
App 20160118487 - Doornbos; Gerben ;   et al.
2016-04-28
Counterdoped Semiconductor Device
App 20160118475 - Oxland; Richard Kenneth ;   et al.
2016-04-28
Iii-v Compound Semiconductor Device Having Dopant Layer And Method Of Making The Same
App 20160049477 - OXLAND; Richard Kenneth ;   et al.
2016-02-18
Replacement Gate Nanowire Device
App 20160027871 - OXLAND; RICHARD KENNETH
2016-01-28
Asymmetric semiconductor device
Grant 9,231,102 - Oxland , et al. January 5, 2
2016-01-05
Barrier layer for FinFET channels
Grant 9,214,555 - Oxland , et al. December 15, 2
2015-12-15
Method for forming a nanowire field effect transistor device having a replacement gate
Grant 9,136,332 - Oxland September 15, 2
2015-09-15
Methods of Forming Semiconductor Devices and FinFET Devices, and FinFET Devices
App 20150255545 - Holland; Martin Christopher ;   et al.
2015-09-10
Iii-v Compound Semiconductor Device Having Metal Contacts And Method Of Making The Same
App 20150243750 - Oxland; Richard Kenneth
2015-08-27
Replacement Gate Nanowire Device
App 20150162403 - OXLAND; RICHARD KENNETH
2015-06-11
III-V compound semiconductor device having metal contacts and method of making the same
Grant 9,054,186 - Oxland June 9, 2
2015-06-09
Fin Structure for a FinFET Device
App 20150132920 - Vellianitis; Georgios ;   et al.
2015-05-14
Asymmetric Semiconductor Device
App 20150061005 - Oxland; Richard Kenneth ;   et al.
2015-03-05
Iii-v Compound Semiconductor Device Having Metal Contacts And Method Of Making The Same
App 20150014792 - OXLAND; Richard Kenneth
2015-01-15
III-V compound semiconductor device having metal contacts and method of making the same
Grant 8,866,195 - Oxland October 21, 2
2014-10-21
Heterostructures for Semiconductor Devices and Methods of Forming the Same
App 20140264438 - Holland; Martin Christopher ;   et al.
2014-09-18
Barrier Layer for FinFET Channels
App 20140264592 - Oxland; Richard Kenneth ;   et al.
2014-09-18
FinFET with Channel Backside Passivation Layer Device and Method
App 20140252478 - Doornbos; Gerben ;   et al.
2014-09-11
Iii-v Compound Semiconductor Device Having Metal Contacts And Method Of Making The Same
App 20140008699 - OXLAND; Richard Kenneth
2014-01-09
Iii-v Compound Semiconductor Device Having Dopant Layer And Method Of Making The Same
App 20130299895 - OXLAND; Richard Kenneth ;   et al.
2013-11-14
Nickelide Source/drain Structures For Cmos Transistors
App 20130234205 - Oxland; Richard Kenneth ;   et al.
2013-09-12

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