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name:-0.03593111038208
name:-0.028784036636353
name:-0.017519950866699
Ouvrard; Cedric Patent Filings

Ouvrard; Cedric

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ouvrard; Cedric.The latest application filed is for "mosfet having a drift region with a graded doping profile and methods of manufacturing thereof".

Company Profile
13.24.29
  • Ouvrard; Cedric - Munich DE
  • Ouvrard; Cedric - Munchen DE
  • Ouvrard; Cedric - Villach AT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device
Grant 11,296,218 - Siemieniec , et al. April 5, 2
2022-04-05
Mosfet Having A Drift Region With A Graded Doping Profile And Methods Of Manufacturing Thereof
App 20220013665 - Siemieniec; Ralf ;   et al.
2022-01-13
Semiconductor Device And Method Of Manufacturing The Same
App 20210367045 - Laforet; David ;   et al.
2021-11-25
Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof
Grant 11,158,735 - Siemieniec , et al. October 26, 2
2021-10-26
Charge Compensation MOSFET with Graded Epi Profile and Methods of Manufacturing Thereof
App 20210242340 - Siemieniec; Ralf ;   et al.
2021-08-05
Semiconductor Device Having A Transistor Cell Region And A Termination Region With Needle-shaped Field Plate Structures
App 20210066459 - Siemieniec; Ralf ;   et al.
2021-03-04
Needle cell trench MOSFET
Grant 10,879,363 - Blank , et al. December 29, 2
2020-12-29
Semiconductor device with needle-shaped field plate structures
Grant 10,872,957 - Siemieniec , et al. December 22, 2
2020-12-22
Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
Grant 10,868,173 - Ouvrard , et al. December 15, 2
2020-12-15
Semiconductor Device
App 20200365724 - Siemieniec; Ralf ;   et al.
2020-11-19
Transistor device with gate resistor
Grant 10,811,531 - Laforet , et al. October 20, 2
2020-10-20
Semiconductor Device Having An Edge Termination Area With Trench Electrodes At Different Electric Potentials, And Method For Manufacturing Thereof
App 20200328303 - Ouvrard; Cedric ;   et al.
2020-10-15
Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof
Grant 10,727,331 - Ouvrard , et al.
2020-07-28
Semiconductor Device with Needle-Shaped Field Plate Structures
App 20200127102 - Siemieniec; Ralf ;   et al.
2020-04-23
Power semiconductor device having different gate crossings, and method for manufacturing thereof
Grant 10,629,595 - Ouvrard , et al.
2020-04-21
Semiconductor transistor and method for forming the semiconductor transistor
Grant 10,573,731 - Yip , et al. Feb
2020-02-25
Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
Grant 10,510,846 - Siemieniec , et al. Dec
2019-12-17
Methods of manufacturing a power MOSFET
Grant 10,453,929 - Laforet , et al. Oc
2019-10-22
Needle Cell Trench MOSFET
App 20190305092 - Blank; Oliver ;   et al.
2019-10-03
Transistor Device with Gate Resistor
App 20190267487 - Laforet; David ;   et al.
2019-08-29
Semiconductor device having a trench gate
Grant 10,269,953 - Laforet , et al.
2019-04-23
Reduced gate charge field-effect transistor
Grant 10,205,015 - Laforet , et al. Feb
2019-02-12
Power Semiconductor Device Having Different Gate Crossings, and Method for Manufacturing Thereof
App 20190006357 - Ouvrard; Cedric ;   et al.
2019-01-03
Semiconductor Device Having a Reduced Surface Doping in an Edge Termination Area, and Method for Manufacturing Thereof
App 20190006513 - Ouvrard; Cedric ;   et al.
2019-01-03
Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
Grant 10,050,113 - Siemieniec , et al. August 14, 2
2018-08-14
Semiconductor Device Having a Trench Gate
App 20180122934 - Laforet; David ;   et al.
2018-05-03
Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer
Grant 9,865,726 - Laforet , et al. January 9, 2
2018-01-09
Reduced Gate Charge Field-Effect Transistor
App 20170345924 - Laforet; David ;   et al.
2017-11-30
Semiconductor device with field electrode and contact structure
Grant 9,799,738 - Siemieniec , et al. October 24, 2
2017-10-24
Semiconductor Transistor and Method for Forming the Semiconductor Transistor
App 20170271491 - Yip; Li Juin ;   et al.
2017-09-21
Reduced gate charge field-effect transistor
Grant 9,755,066 - Laforet , et al. September 5, 2
2017-09-05
Semiconductor Device with Needle-Shaped Field Plate Structures in a Transistor Cell Region and in an Inner Termination Region
App 20170250255 - Siemieniec; Ralf ;   et al.
2017-08-31
Semiconductor Device with Needle-Shaped Field Plates and a Gate Structure with Edge and Node Portions
App 20170250256 - Siemieniec; Ralf ;   et al.
2017-08-31
Methods of Manufacturing a Power MOSFET
App 20170236910 - Laforet; David ;   et al.
2017-08-17
JFET and method of manufacturing thereof
Grant 9,711,660 - Konrath , et al. July 18, 2
2017-07-18
Power MOSFET with seperate gate and field plate trenches
Grant 9,680,004 - Laforet , et al. June 13, 2
2017-06-13
Reduced Gate Charge Field-Effect Transistor
App 20170154993 - Laforet; David ;   et al.
2017-06-01
Semiconductor Device
App 20170154965 - Siemieniec; Ralf ;   et al.
2017-06-01
Method of manufacturing a vertical junction field effect transistor
Grant 9,666,696 - Esteve , et al. May 30, 2
2017-05-30
Method of Manufacturing a Semiconductor Device with Trench Gate by Using a Screen Oxide Layer
App 20170110573 - Laforet; David ;   et al.
2017-04-20
Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
App 20170077227 - Laforet; David ;   et al.
2017-03-16
Semiconductor Device with Field Electrode and Contact Structure
App 20160064496 - Siemieniec; Ralf ;   et al.
2016-03-03
Method of Manufacturing a Vertical Junction Field Effect Transistor
App 20160064534 - Esteve; Romain ;   et al.
2016-03-03
Junction field effect transistor with vertical PN junction
Grant 9,276,135 - Siemieniec , et al. March 1, 2
2016-03-01
Power MOSFET and Method of Manufacturing a Power MOSFET
App 20160020319 - Laforet; David ;   et al.
2016-01-21
Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer
Grant 9,209,318 - Esteve , et al. December 8, 2
2015-12-08
Jfet And Method Of Manufacturing Thereof
App 20150263178 - Konrath; Jens Peter ;   et al.
2015-09-17
Semiconductor device, junction field effect transistor and vertical field effect transistor
Grant 9,029,974 - Esteve , et al. May 12, 2
2015-05-12
Junction Field Effect Transistor with Vertical PN Junction
App 20150076568 - Siemieniec; Ralf ;   et al.
2015-03-19
Semiconductor Device, Junction Field Effect Transistor And Vertical Field Effect Transistor
App 20150069411 - Esteve; Romain ;   et al.
2015-03-12
Reduced charge transistor
Grant 8,946,787 - Siemieniec , et al. February 3, 2
2015-02-03
Vertical JFET with Integrated Body Diode
App 20140231883 - Esteve; Romain ;   et al.
2014-08-21
Reduced Charge Transistor
App 20140097478 - SIEMIENIEC; Ralf ;   et al.
2014-04-10

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