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Patent applications and USPTO patent grants for Ouchi; Yoshiaki.The latest application filed is for "impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region".
Patent | Date |
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Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region Grant 6,304,024 - Uda , et al. October 16, 2 | 2001-10-16 |
Bi-CMOS semiconductor memory device, including improved layout structure and testing method Grant 5,150,325 - Yanagisawa , et al. September 22, 1 | 1992-09-22 |
Thermal head Grant 4,835,548 - Nikadio , et al. May 30, 1 | 1989-05-30 |
Resistor and an electron tube incorporating the same Grant 4,760,370 - Nikaido , et al. July 26, 1 | 1988-07-26 |
Semiconductor memory device Grant 4,562,555 - Ouchi , et al. December 31, 1 | 1985-12-31 |
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