Ou; Wendy

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ou; Wendy.The latest application filed is for "vread bias allocation on word lines for read disturb reduction in 3d non-volatile memory".

Company Profile

0.6.6

Ou; Wendy - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Pre-charge during programming for 3D memory using gate-induced drain leakage Grant 8,988,937 - Dunga , et al. March 24, 2	2015-03-24
Pre-charge during programming for 3D memory using gate-induced drain leakage Grant 8,988,939 - Dunga , et al. March 24, 2	2015-03-24
Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory Grant 8,982,637 - Dong , et al. March 17, 2	2015-03-17
Program and read operations for 3D non-volatile memory based on memory hole diameter Grant 8,982,626 - Dong , et al. March 17, 2	2015-03-17
Vread Bias Allocation On Word Lines For Read Disturb Reduction In 3d Non-volatile Memory App 20150070998 - Dong; Yingda ; et al.	2015-03-12
Program And Read Operations For 3D Non-Volatile Memory Based On Memory Hole Diameter App 20140362641 - Dong; Yingda ; et al.	2014-12-11
3D Non-Volatile Memory With Control Gate Length Based On Memory Hole Diameter App 20140362645 - Dong; Yingda ; et al.	2014-12-11
3D Non-Volatile Memory With Control Gate Length Based On Memory Hole Diameter App 20140362642 - Dong; Yingda ; et al.	2014-12-11
Dynamic erase voltage step size selection for 3D non-volatile memory Grant 8,891,308 - Ou , et al. November 18, 2	2014-11-18
Dynamic erase voltage step size selection for 3D non-volatile memory Grant 8,873,293 - Ou , et al. October 28, 2	2014-10-28
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage App 20140247670 - Dunga; Mohan ; et al.	2014-09-04
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage App 20140112075 - Dunga; Mohan ; et al.	2014-04-24

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