Otake; Nobuyuki
Patent Applications and Registrations
Patent applications and USPTO patent grants for Otake; Nobuyuki.The latest application filed is for "layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-iii nitride single crystal layer".
- Otake; Nobuyuki - Nukata-gun JP
- Otake; Nobuyuki - Tokyo JP
| Patent | Date |
|---|---|
| Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer Grant 9,728,609 - Narita , et al. August 8, 2 | 2017-08-08 |
| Layered Substrate With A Miscut Angle Comprising A Silicon Single Crystal Substrate And A Group-iii Nitride Single Crystal Layer App 20150053996 - Narita; Tetsuo ; et al. | 2015-02-26 |
| Laser equipment Grant 7,843,987 - Otake , et al. November 30, 2 | 2010-11-30 |
| Laser equipment App 20090238221 - Otake; Nobuyuki ; et al. | 2009-09-24 |
| Laser equipment Grant 7,564,890 - Otake , et al. July 21, 2 | 2009-07-21 |
| Laser apparatus App 20080212630 - Otake; Nobuyuki ; et al. | 2008-09-04 |
| Laser equipment App 20070217473 - Abe; Katsunori ; et al. | 2007-09-20 |
| Laser equipment App 20070217474 - Otake; Nobuyuki ; et al. | 2007-09-20 |
| Pen points for writing instruments Grant RE30,659 - Otake , et al. June 30, 1 | 1981-06-30 |
| Pen points for writing instruments Grant 4,076,428 - Otake , et al. February 28, 1 | 1978-02-28 |
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