| Patent | Date |
|---|
Type III-V Semiconductor Device with Improved Leakage
App 20220285539 - Koller; Christian ; et al. | 2022-09-08 |
Group III Nitride-Based Transistor Device
App 20220271147 - Ostermaier; Clemens ; et al. | 2022-08-25 |
Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device
Grant 11,349,012 - Ostermaier , et al. May 31, 2 | 2022-05-31 |
High-electron-mobility transistor having a buried field plate
Grant 11,114,554 - Prechtl , et al. September 7, 2 | 2021-09-07 |
Group III Nitride-Based Transistor Device and Method of Fabricating a Gate Structure for a Group III Nitride-Based Transistor Device
App 20200321447 - Ostermaier; Clemens ; et al. | 2020-10-08 |
Semiconductor device
Grant 10,600,710 - Prechtl , et al. | 2020-03-24 |
Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage
Grant 10,304,923 - Ostermaier , et al. | 2019-05-28 |
Semiconductor Device
App 20190096779 - Prechtl; Gerhard ; et al. | 2019-03-28 |
Semiconductor wafer and method
Grant 10,199,216 - Ostermaier , et al. Fe | 2019-02-05 |
Semiconductor device
Grant 10,177,061 - Prechtl , et al. J | 2019-01-08 |
Semiconductor Probe Test Card with Integrated Hall Measurement Features
App 20180328981 - Ostermaier; Clemens ; et al. | 2018-11-15 |
Method of Forming a Vertical Potential Short in a Periphery Region of a III-Nitride Stack for Preventing Lateral Leakage
App 20180331175 - Ostermaier; Clemens ; et al. | 2018-11-15 |
Semiconductor probe test card with integrated hall measurement features
Grant 10,126,355 - Ostermaier , et al. November 13, 2 | 2018-11-13 |
Method of conditioning an etch chamber for contaminant free etching of a semiconductor device
Grant 10,128,133 - Haghofer , et al. November 13, 2 | 2018-11-13 |
Non-planar normally off compound semiconductor device
Grant 10,090,406 - Prechtl , et al. October 2, 2 | 2018-10-02 |
High electron mobility transistor with carrier injection mitigation gate structure
Grant 10,038,085 - Curatola , et al. July 31, 2 | 2018-07-31 |
Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage
Grant 10,038,051 - Ostermaier , et al. July 31, 2 | 2018-07-31 |
Semiconductor structure having a test structure formed in a group III nitride layer
Grant 9,947,600 - Heider , et al. April 17, 2 | 2018-04-17 |
High-Electron-Mobility Transistor Having a Buried Field Plate
App 20170365702 - Prechtl; Gerhard ; et al. | 2017-12-21 |
Semiconductor device
Grant 9,847,394 - Prechtl , et al. December 19, 2 | 2017-12-19 |
Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
Grant 9,837,520 - Ostermaier , et al. December 5, 2 | 2017-12-05 |
III-nitride bidirectional device
Grant 9,837,522 - Prechtl , et al. December 5, 2 | 2017-12-05 |
Semiconductor Structure Having a Test Structure Formed in a Group III Nitride Layer
App 20170330808 - Heider; Franz ; et al. | 2017-11-16 |
Vertical Potential Short in the Periphery Region of a III-Nitride Stack for Preventing Lateral Leakage
App 20170243936 - Ostermaier; Clemens ; et al. | 2017-08-24 |
Semiconductor structure and methods
Grant 9,728,470 - Heider , et al. August 8, 2 | 2017-08-08 |
High-electron-mobility transistor having a buried field plate
Grant 9,728,630 - Prechtl , et al. August 8, 2 | 2017-08-08 |
High Electron Mobility Transistor with Carrier Injection Mitigation Gate Structure
App 20170200817 - Curatola; Gilberto ; et al. | 2017-07-13 |
Semiconductor wafer and method
App 20170186600 - Ostermaier; Clemens ; et al. | 2017-06-29 |
Contact structures for compound semiconductor devices
Grant 9,666,705 - Prechtl , et al. May 30, 2 | 2017-05-30 |
Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
Grant 9,647,104 - Ostermaier , et al. May 9, 2 | 2017-05-09 |
III-Nitride Bidirectional Device
App 20170125562 - Prechtl; Gerhard ; et al. | 2017-05-04 |
Semiconductor Device
App 20170104076 - Prechtl; Gerhard ; et al. | 2017-04-13 |
Switch Circuit, Semiconductor Device and Method
App 20170103978 - Prechtl; Gerhard ; et al. | 2017-04-13 |
Electronic device
Grant 9,590,048 - Prechtl , et al. March 7, 2 | 2017-03-07 |
Surface treatment of semiconductor substrate using free radical state fluorine particles
Grant 9,515,162 - Reiner , et al. December 6, 2 | 2016-12-06 |
Surface Treatment Of Semiconductor Substrate Using Free Radical State Fluorine Particles
App 20160260817 - Reiner; Maria ; et al. | 2016-09-08 |
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-Heterojunction Fin Structure
App 20160247905 - Ostermaier; Clemens ; et al. | 2016-08-25 |
Semiconductor Device
App 20160240645 - Prechtl; Gerhard ; et al. | 2016-08-18 |
Method of manufacturing HEMTs with an integrated Schottky diode
Grant 9,412,834 - Prechtl , et al. August 9, 2 | 2016-08-09 |
III-Nitride Device Having a Buried Insulating Region
App 20160155834 - Ostermaier; Clemens ; et al. | 2016-06-02 |
Method of manufacturing a multi-channel HEMT
Grant 9,349,829 - Ostermaier , et al. May 24, 2 | 2016-05-24 |
Group III-nitride-based enhancement mode transistor
Grant 9,337,279 - Ostermaier , et al. May 10, 2 | 2016-05-10 |
Non-Planar Normally Off Compound Semiconductor Device
App 20160087089 - Prechtl; Gerhard ; et al. | 2016-03-24 |
High-Electron-Mobility Transistor Having a Buried Field Plate
App 20160071967 - Prechtl; Gerhard ; et al. | 2016-03-10 |
Method of manufacturing a high breakdown voltage III-nitride device
Grant 9,263,545 - Ostermaier , et al. February 16, 2 | 2016-02-16 |
Method of Manufacturing a High Breakdown Voltage III-Nitride Device
App 20150311312 - Ostermaier; Clemens ; et al. | 2015-10-29 |
High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode
Grant 9,142,550 - Prechtl , et al. September 22, 2 | 2015-09-22 |
Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure
App 20150255590 - Ostermaier; Clemens ; et al. | 2015-09-10 |
Group III-Nitride-Based Enhancement Mode Transistor
App 20150249134 - Ostermaier; Clemens ; et al. | 2015-09-03 |
Method Of Manufacturing A Multi-channel Hemt
App 20150221748 - Ostermaier; Clemens ; et al. | 2015-08-06 |
High breakdown voltage III-nitride device
Grant 9,076,763 - Ostermaier , et al. July 7, 2 | 2015-07-07 |
Group III-nitride-based enhancement mode transistor
Grant 9,048,303 - Ostermaier , et al. June 2, 2 | 2015-06-02 |
Multi-channel HEMT
Grant 9,035,355 - Ostermaier , et al. May 19, 2 | 2015-05-19 |
Electronic Device
App 20150115326 - Prechtl; Gerhard ; et al. | 2015-04-30 |
Method of Manufacturing HEMTs with an Integrated Schottky Diode
App 20150011058 - Prechtl; Gerhard ; et al. | 2015-01-08 |
High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode
App 20140367700 - Prechtl; Gerhard ; et al. | 2014-12-18 |
Integrated Schottky diode for HEMTs
Grant 8,872,235 - Prechtl , et al. October 28, 2 | 2014-10-28 |
High Breakdown Voltage III-Nitride Device
App 20140042448 - Ostermaier; Clemens ; et al. | 2014-02-13 |
Multi-Channel HEMT
App 20130334573 - Ostermaier; Clemens ; et al. | 2013-12-19 |
Contact Structures for Compound Semiconductor Devices
App 20130299842 - Prechtl; Gerhard ; et al. | 2013-11-14 |
Integrated Schottky Diode for HEMTs
App 20130221363 - Prechtl; Gerhard ; et al. | 2013-08-29 |
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