Oshio; Hidetaka
Patent Applications and Registrations
Patent applications and USPTO patent grants for Oshio; Hidetaka.The latest application filed is for "method for forming and patterning a layer and/or substrate".
- Oshio; Hidetaka - Tokyo JP
- Oshio, Hidetaka - Narita-shi JP
| Patent | Date |
|---|---|
| Multiple spacer patterning schemes Grant 11,315,787 - Yang , et al. April 26, 2 | 2022-04-26 |
| Method for forming and patterning a layer and/or substrate Grant 11,145,509 - Koshizawa , et al. October 12, 2 | 2021-10-12 |
| Method For Forming And Patterning A Layer And/or Substrate App 20200373159 - KOSHIZAWA; Takehito ; et al. | 2020-11-26 |
| Highly Etch Selective Amorphous Carbon Film App 20200357640 - PRASAD; Rajesh ; et al. | 2020-11-12 |
| Multiple Spacer Patterning Schemes App 20200335339 - YANG; Tzu-shun ; et al. | 2020-10-22 |
| Multiple Spacer Patterning Schemes App 20200335338 - YANG; Tzu-Shun ; et al. | 2020-10-22 |
| Highly etch selective amorphous carbon film Grant 10,727,059 - Bobek , et al. | 2020-07-28 |
| Highly Etch Selective Amorphous Carbon Film App 20190172714 - BOBEK; Sarah ; et al. | 2019-06-06 |
| Method of forming a damascene structure App 20040192051 - Tanaka, Hiroya ; et al. | 2004-09-30 |
| Apparatus for adjustable gas distribution for semiconductor substrate processing App 20040082251 - Bach, Joseph ; et al. | 2004-04-29 |
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