Oshika; Yoshikazu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Oshika; Yoshikazu.The latest application filed is for "submount and method of manufacturing the same".

Company Profile

0.14.9

Oshika; Yoshikazu - Tokyo N/A JP
Oshika; Yoshikazu - Chiyoda-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingot Grant 8,986,446 - Oshika March 24, 2	2015-03-24
Solder layer and device bonding substrate using the same and method for manufacturing such a substrate Grant 8,747,579 - Oshika , et al. June 10, 2	2014-06-10
Submount Grant 8,581,106 - Oshika , et al. November 12, 2	2013-11-12
Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrate Grant 8,516,692 - Oshika , et al. August 27, 2	2013-08-27
Submount and method of manufacturing the same Grant 8,472,208 - Oshika , et al. June 25, 2	2013-06-25
Solder layer and electronic device bonding substrate and submount using the same Grant 8,404,359 - Oshika , et al. March 26, 2	2013-03-26
Solder layer, heat sink using such a solder layer and method for manufacturing such a heat sink Grant 8,310,047 - Nakano , et al. November 13, 2	2012-11-13
Submount and Method of Manufacturing the Same App 20120012373 - Oshika; Yoshikazu ; et al.	2012-01-19
Si-Doped GaAs single crystal ingot and process for producing the same, and Si-Doped GaAs single crystal wafer produced from Si-Doped GaAs single crystal ingot App 20110059294 - Oshika; Yoshikazu	2011-03-10
Solder Layer, Heat Sink Using Such A Solder Layer And Method For Manufacturing Such A Heat Sink App 20100263849 - Nakano; Masayuki ; et al.	2010-10-21
Light emitting semiconductor Grant 7,800,096 - Ohta , et al. September 21, 2	2010-09-21
Submount and Method of Manufacturing the Same App 20090207580 - Oshika; Yoshikazu ; et al.	2009-08-20
Metal-ceramic Composite Substrate And Method Of Its Manufacture App 20090151982 - Oshika; Yoshikazu	2009-06-18
Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot App 20090098377 - Oshika; Yoshikazu	2009-04-16
Solder Layer, Substrate For Device Joining Utilizing The Same And Method Of Manufacturing The Substrate App 20090095513 - Oshika; Yoshikazu ; et al.	2009-04-16
Solder Layer And Device Bonding Substrate Using The Same And Method For Manufacturing Such A Substrate App 20080205013 - OSHIKA; Yoshikazu ; et al.	2008-08-28
Solder Layer And Electronic Device Bonding Substrate And Submount Using The Same App 20070228105 - Oshika; Yoshikazu ; et al.	2007-10-04

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.