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Patent applications and USPTO patent grants for OSHCHEPKOV; Ivan.The latest application filed is for "ultra-low temperature ald to form high-quality si-containing film".
Patent | Date |
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Ultra-low Temperature Ald To Form High-quality Si-containing Film App 20200373148 - NODA; Naoto ;   et al. | 2020-11-26 |
Vapor Disposition Of Silicon-containing Films Using Penta-substituted Disilanes App 20190027357 - Girard; Jean-Marc ;   et al. | 2019-01-24 |
Vapor Deposition Of Silicon-containing Films Using Penta-substituted Disilanes App 20170186597 - GIRARD; Jean-Marc ;   et al. | 2017-06-29 |
Vapor deposition of silicon-containing films using penta-substituted disilanes Grant 9,633,838 - Girard , et al. April 25, 2 | 2017-04-25 |
Vapor Deposition Of Silicon-containing Films Using Penta-substituted Disilanes App 20160111272 - GIRARD; Jean-Marc ;   et al. | 2016-04-21 |
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