| Patent | Date |
|---|
Semiconductor Manufacturing Apparatus And Semiconductor Wafer Holder
App 20170044686 - Higashi; Shinya ; et al. | 2017-02-16 |
Semiconductor Manufacturing Apparatus And Semiconductor Wafer Holder
App 20140283748 - Higashi; Shinya ; et al. | 2014-09-25 |
Power MOS transistor having trench gate
Grant 7,227,223 - Matsuda , et al. June 5, 2 | 2007-06-05 |
Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
App 20060145290 - Okumura; Hideki ; et al. | 2006-07-06 |
Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
Grant 6,995,426 - Okumura , et al. February 7, 2 | 2006-02-07 |
Semiconductor device
Grant 6,740,931 - Kouzuki , et al. May 25, 2 | 2004-05-25 |
Semiconductor device
App 20040016962 - Okumura, Hideki ; et al. | 2004-01-29 |
Semiconductor device
App 20040012038 - Kouzuki, Shigeo ; et al. | 2004-01-22 |
Power MOS transistor having trench gate
App 20040012051 - Matsuda, Noboru ; et al. | 2004-01-22 |
Semiconductor device and method of manufacturing the same
Grant 6,627,499 - Osawa September 30, 2 | 2003-09-30 |
Semiconductor device having vertical metal insulator semiconductor transistor and method of manufacturing the same
App 20030122222 - Okumura, Hideki ; et al. | 2003-07-03 |
Semiconductor device and method of manufacturing the same
App 20030075760 - Osawa, Akihiko | 2003-04-24 |
Semiconductor device and method of manufacturing the same
App 20020130359 - Okumura, Hideki ; et al. | 2002-09-19 |
Semiconductor device and method of manufacturing the same
App 20010025984 - Osawa, Akihiko | 2001-10-04 |
Semiconductor gate trench with covered open ends
Grant 6,239,464 - Tsuchitani , et al. May 29, 2 | 2001-05-29 |
Semiconductor device
Grant 6,060,747 - Okumura , et al. May 9, 2 | 2000-05-09 |
Semiconductor device and method of manufacturing the same with stable control of lifetime carriers
Grant 6,031,276 - Osawa , et al. February 29, 2 | 2000-02-29 |
Method of manufacturing semiconductor bonded substrate
Grant 6,010,950 - Okumura , et al. January 4, 2 | 2000-01-04 |
Vertical power MOSFET and process of fabricating the same
Grant 5,578,508 - Baba , et al. November 26, 1 | 1996-11-26 |
Semiconductor device and method of increasing device breakdown voltage of semiconductor device
Grant 5,554,872 - Baba , et al. September 10, 1 | 1996-09-10 |
Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
Grant 5,250,446 - Osawa , et al. October 5, 1 | 1993-10-05 |
Semiconductor device with overvoltage protective function
Grant 5,243,205 - Kitagawa , et al. September 7, 1 | 1993-09-07 |
Method of production of vertical MOS transistor
Grant 5,242,845 - Baba , et al. September 7, 1 | 1993-09-07 |
Vertical MOS transistor and its production method
Grant 5,126,807 - Baba , et al. June 30, 1 | 1992-06-30 |
Dielectrically isolated structure for use in soi-type semiconductor device
Grant 5,126,817 - Baba , et al. June 30, 1 | 1992-06-30 |
Semiconductor device having a semiconductive protection layer
Grant 5,029,324 - Osawa , et al. July 2, 1 | 1991-07-02 |
Bonded substrate of semiconductor elements having a high withstand voltage
Grant 4,984,052 - Koshino , et al. January 8, 1 | 1991-01-08 |
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