Ortolland; Claude

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ortolland; Claude.The latest application filed is for "heterojunction bipolar transistor with marker layer".

Company Profile

6.28.30

Ortolland; Claude - Garrison NY
Ortolland; Claude - Austin TX
Ortolland; Claude - Peekskill NY
Ortolland; Claude - Hopewell Junction NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Virtual bulk in semiconductor on insulator technology Grant 11,374,092 - Pekarik , et al. June 28, 2	2022-06-28
Heterojunction bipolar transistor with marker layer Grant 11,217,685 - Ho , et al. January 4, 2	2022-01-04
Heterojunction bipolar transistor Grant 11,145,725 - Liu , et al. October 12, 2	2021-10-12
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 11,101,357 - Chou , et al. August 24, 2	2021-08-24
Heterojunction Bipolar Transistor With Marker Layer App 20210091214 - HO; Herbert ; et al.	2021-03-25
Heterojunction Bipolar Transistor App 20210091189 - LIU; Qizhi ; et al.	2021-03-25
Virtual Bulk In Semiconductor On Insulator Technology App 20210091180 - PEKARIK; John J. ; et al.	2021-03-25
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20200365702 - Chou; Anthony I. ; et al.	2020-11-19
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 10,734,492 - Chou , et al.	2020-08-04
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20190296120 - CHOU; Anthony I. ; et al.	2019-09-26
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 10,381,452 - Chou , et al. A	2019-08-13
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 10,374,048 - Chou , et al.	2019-08-06
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 10,367,072 - Chou , et al. July 30, 2	2019-07-30
Self-aligned nanotube structures Grant 10,170,304 - Kwon , et al. J	2019-01-01
Methods of modulating the morphology of epitaxial semiconductor material Grant 9,953,873 - Chandra , et al. April 24, 2	2018-04-24
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,922,831 - Chou , et al. March 20, 2	2018-03-20
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20180076039 - CHOU; Anthony I. ; et al.	2018-03-15
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20180061645 - CHOU; Anthony I. ; et al.	2018-03-01
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20180061646 - CHOU; Anthony I. ; et al.	2018-03-01
Field-effect transistors with a non-relaxed strained channel Grant 9,871,057 - Nummy , et al. January 16, 2	2018-01-16
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,859,122 - Chou , et al. January 2, 2	2018-01-02
Asymmetric high-K dielectric for reducing gate induced drain leakage Grant 9,837,319 - Chou , et al. December 5, 2	2017-12-05
Modulation Of The Morphology Of Epitaxial Semiconductor Material App 20170345719 - Chandra; Bhupesh ; et al.	2017-11-30
Hydroxyl group termination for nucleation of a dielectric metallic oxide Grant 9,831,084 - Ando , et al. November 28, 2	2017-11-28
Asymmetric high-K dielectric for reducing gate induced drain leakage Grant 9,768,071 - Chou , et al. September 19, 2	2017-09-19
Field-effect Transistors With A Non-relaxed Strained Channel App 20170256565 - Nummy; Karen A. ; et al.	2017-09-07
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,721,843 - Chou , et al. August 1, 2	2017-08-01
Buffer layer for modulating Vt across devices Grant 9,722,045 - Chandra , et al. August 1, 2	2017-08-01
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20170178913 - CHOU; Anthony I. ; et al.	2017-06-22
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,685,379 - Chou , et al. June 20, 2	2017-06-20
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20170125542 - CHOU; Anthony I. ; et al.	2017-05-04
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES App 20170117387 - Chandra; Bhupesh ; et al.	2017-04-27
Control of O-ingress into gate stack dielectric layer using oxygen permeable layer Grant 9,620,384 - Ando , et al. April 11, 2	2017-04-11
Asymmetric high-K dielectric for reducing gate induced drain leakage Grant 9,577,061 - Chou , et al. February 21, 2	2017-02-21
Asymmetric high-K dielectric for reducing gate induced drain leakage Grant 9,570,354 - Chou , et al. February 14, 2	2017-02-14
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,559,010 - Chou , et al. January 31, 2	2017-01-31
Asymmetric high-k dielectric for reducing gate induced drain leakage Grant 9,543,213 - Chou , et al. January 10, 2	2017-01-10
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160268390 - CHOU; Anthony I. ; et al.	2016-09-15
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160260618 - CHOU; Anthony I. ; et al.	2016-09-08
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160260638 - CHOU; Anthony I. ; et al.	2016-09-08
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160204209 - CHOU; Anthony I. ; et al.	2016-07-14
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160204214 - CHOU; Anthony I. ; et al.	2016-07-14
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160203986 - CHOU; Anthony I. ; et al.	2016-07-14
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160203985 - CHOU; Anthony I. ; et al.	2016-07-14
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160203987 - CHOU; Anthony I. ; et al.	2016-07-14
Hydroxyl group termination for nucleation of a dielectric metallic oxide Grant 9,373,501 - Ando , et al. June 21, 2	2016-06-21
Asymmetric High-k Dielectric For Reducing Gate Induced Drain Leakage App 20160149013 - CHOU; Anthony I. ; et al.	2016-05-26
Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors Grant 9,269,786 - Chou , et al. February 23, 2	2016-02-23
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide App 20160027640 - Ando; Takashi ; et al.	2016-01-28
Control Of O-ingress Into Gate Stack Dielectric Layer Using Oxygen Permeable Layer App 20160005620 - Ando; Takashi ; et al.	2016-01-07
Gate electrode with stabilized metal semiconductor alloy-semiconductor stack Grant 9,166,014 - Breil , et al. October 20, 2	2015-10-20
Gate electrode with stabilized metal semiconductor alloy-semiconductor stack Grant 9,034,749 - Breil , et al. May 19, 2	2015-05-19
Silicon Nitride Layer Deposited at Low Temperature to Prevent Gate Dielectric Regrowth High-K Metal Gate Field Effect Transistors App 20150084132 - Chou; Anthony I-Chih ; et al.	2015-03-26
Gate Electrode With Stabilized Metal Semiconductor Alloy-semiconductor Stack App 20140361351 - Breil; Nicolas L. ; et al.	2014-12-11
Gate Electrode With Stabilized Metal Semiconductor Alloy-semiconductor Stack App 20140363964 - Breil; Nicolas L. ; et al.	2014-12-11
Hydroxyl Group Termination For Nucleation Of A Dielectric Metallic Oxide App 20140308821 - Ando; Takashi ; et al.	2014-10-16
Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate App 20130087856 - Ortolland; Claude ; et al.	2013-04-11

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