Patent | Date |
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Buried Source Line Structure For Boosting Read Scheme App 20220254382 - Sakakibara; Kiyohiko ;   et al. | 2022-08-11 |
Block quality classification at testing for non-volatile memory, and multiple bad block flags for product diversity Grant 11,397,635 - Lee , et al. July 26, 2 | 2022-07-26 |
Threshold voltage setting with boosting read scheme Grant 11,348,649 - Sakakibara , et al. May 31, 2 | 2022-05-31 |
Non-volatile memory with switchable erase methods Grant 11,342,029 - Oowada , et al. May 24, 2 | 2022-05-24 |
Concurrent programming of multiple cells for non-volatile memory devices Grant 11,342,028 - Yang , et al. May 24, 2 | 2022-05-24 |
Buried source line structure for boosting read scheme Grant 11,342,006 - Sakakibara , et al. May 24, 2 | 2022-05-24 |
Three-dimensional Memory Device Containing A Shared Word Line Driver Across Different Tiers And Methods For Making The Same App 20220139878 - OGAWA; Hiroyuki ;   et al. | 2022-05-05 |
Three-dimensional Memory Device Containing A Shared Word Line Driver Across Different Tiers And Methods For Making The Same App 20220139441 - OGAWA; Hiroyuki ;   et al. | 2022-05-05 |
Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same Grant 11,322,483 - Ogawa , et al. May 3, 2 | 2022-05-03 |
Non-volatile Memory With Switchable Erase Methods App 20220101926 - Oowada; Ken ;   et al. | 2022-03-31 |
Boosting read scheme with back-gate bias Grant 11,227,663 - Sakakibara , et al. January 18, 2 | 2022-01-18 |
Double write/read throughput by CMOS adjacent array (CaA) NAND memory Grant 11,189,335 - Nishikawa , et al. November 30, 2 | 2021-11-30 |
Concurrent Programming Of Multiple Cells For Non-volatile Memory Devices App 20210358553 - Yang; Xiang ;   et al. | 2021-11-18 |
Three-dimensional memory device including different height memory stack structures and methods of making the same Grant 11,094,715 - Cui , et al. August 17, 2 | 2021-08-17 |
Concurrent Programming Of Multiple Cells For Non-volatile Memory Devices App 20210233589 - Yang; Xiang ;   et al. | 2021-07-29 |
Modulation of programming voltage during cycling Grant 11,049,580 - Gautam , et al. June 29, 2 | 2021-06-29 |
Block Quality Classification At Testing For Non-volatile Memory, And Multiple Bad Block Flags For Product Diversity App 20210173734 - Lee; Shih-Chung ;   et al. | 2021-06-10 |
Boosting Read Scheme With Back-gate Bias App 20210174881 - Sakakibara; Kiyohiko ;   et al. | 2021-06-10 |
Read operation for non-volatile memory with compensation for adjacent wordline Grant 11,024,393 - Zhang , et al. June 1, 2 | 2021-06-01 |
Double Write/read Throughput By Caa Nand App 20210142841 - Nishikawa; Masatoshi ;   et al. | 2021-05-13 |
Threshold voltage setting with boosting read scheme Grant 11,004,518 - Sakakibara , et al. May 11, 2 | 2021-05-11 |
Modulation of programming voltage during cycling Grant 11,004,525 - Gautam , et al. May 11, 2 | 2021-05-11 |
Buried Source Line Structure For Boosting Read Scheme App 20210125643 - Sakakibara; Kiyohiko ;   et al. | 2021-04-29 |
Adaptive VPASS for 3D flash memory with pair string structure Grant 10,978,152 - Gautam , et al. April 13, 2 | 2021-04-13 |
Concurrent programming of multiple cells for non-volatile memory devices Grant 10,978,156 - Yang , et al. April 13, 2 | 2021-04-13 |
Adaptive VPASS for 3D flash memory with pair string structure Grant 10,971,231 - Gautam , et al. April 6, 2 | 2021-04-06 |
Boosting read scheme with back-gate bias Grant 10,957,401 - Sakakibara , et al. March 23, 2 | 2021-03-23 |
Boosting read scheme with back-gate bias Grant 10,950,311 - Sakakibara , et al. March 16, 2 | 2021-03-16 |
Boosting Read Scheme With Back-gate Bias App 20200411112 - Sakakibara; Kiyohiko ;   et al. | 2020-12-31 |
Boosting Read Scheme With Back-gate Bias App 20200411115 - Sakakibara; Kiyohiko ;   et al. | 2020-12-31 |
Threshold Voltage Setting With Boosting Read Scheme App 20200411113 - Sakakibara; Kiyohiko ;   et al. | 2020-12-31 |
Threshold Voltage Setting With Boosting Read Scheme App 20200411114 - Sakakibara; Kiyohiko ;   et al. | 2020-12-31 |
Three-dimensional Memory Device Including Different Height Memory Stack Structures And Methods Of Making The Same App 20200335518 - Cui; Zhixin ;   et al. | 2020-10-22 |
Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same Grant 10,756,106 - Nishikawa , et al. A | 2020-08-25 |
Three-dimensional memory device including different height memory stack structures and methods of making the same Grant 10,741,579 - Cui , et al. A | 2020-08-11 |
Three-dimensional Memory Device Including Different Height Memory Stack Structures And Methods Of Making The Same App 20200185405 - CUI; Zhixin ;   et al. | 2020-06-11 |
Three-dimensional Memory Device With Locally Modulated Threshold Voltages At Drain Select Levels And Methods Of Making The Same App 20200168623 - NISHIKAWA; Masatoshi ;   et al. | 2020-05-28 |
Concurrent Programming Of Multiple Cells For Non-volatile Memory Devices App 20200005871 - YANG; Xiang ;   et al. | 2020-01-02 |
Program sequencing Grant 9,865,352 - Miao , et al. January 9, 2 | 2018-01-09 |
Program Sequencing App 20170125101 - Miao; Xiaochang ;   et al. | 2017-05-04 |
Non-volatile memory with prior state sensing Grant 9,548,130 - Dutta , et al. January 17, 2 | 2017-01-17 |
Partial block erase for block programming in non-volatile memory Grant 9,543,023 - Lai , et al. January 10, 2 | 2017-01-10 |
Verification process for non-volatile storage Grant RE46,264 - Hemink , et al. January 3, 2 | 2017-01-03 |
Multiple Bit Line Voltage Sensing For Non-volatile Memory App 20160300620 - Dutta; Deepanshu ;   et al. | 2016-10-13 |
Non-volatile Memory With Prior State Sensing App 20160300619 - Dutta; Deepanshu ;   et al. | 2016-10-13 |
Partial Block Erase For Block Programming In Non-Volatile Memory App 20160217860 - Lai; Chun-hung ;   et al. | 2016-07-28 |
Nonvolatile memory and method for improved programming with reduced verify Grant 9,324,418 - Dong , et al. April 26, 2 | 2016-04-26 |
Programming non-volatile storage including reducing impact from other memory cells Grant RE45,910 - Dong , et al. March 1, 2 | 2016-03-01 |
Dynamic erase depth for improved endurance of non-volatile memory Grant 9,214,240 - Dutta , et al. December 15, 2 | 2015-12-15 |
Optimizing pass voltage and initial program voltage based on performance of non-volatile memory Grant 9,123,424 - Oowada , et al. September 1, 2 | 2015-09-01 |
Optimizing Pass Voltage And Initial Program Voltage Based On Performance Of Non-Volatile Memory App 20150170746 - Oowada; Ken ;   et al. | 2015-06-18 |
Dynamic bit line bias for programming non-volatile memory Grant 9,013,928 - Dutta , et al. April 21, 2 | 2015-04-21 |
Dynamic Bit Line Bias For Programming Non-Volatile Memory App 20150092496 - Dutta; Deepanshu ;   et al. | 2015-04-02 |
Partitioned erase and erase verification in non-volatile memory Grant 8,958,249 - Dutta , et al. February 17, 2 | 2015-02-17 |
Dynamic bit line bias for programming non-volatile memory Grant 8,953,386 - Dutta , et al. February 10, 2 | 2015-02-10 |
Bit line current trip point modulation for reading nonvolatile storage elements Grant 8,942,047 - Mui , et al. January 27, 2 | 2015-01-27 |
Programming select gate transistors and memory cells using dynamic verify level Grant 8,929,142 - Dong , et al. January 6, 2 | 2015-01-06 |
Programming select gate transistors and memory cells using dynamic verify level Grant 8,913,432 - Dong , et al. December 16, 2 | 2014-12-16 |
Double verify method in multi-pass programming to suppress read noise Grant 8,908,441 - Dutta , et al. December 9, 2 | 2014-12-09 |
Double verify method with soft programming to suppress read noise Grant 8,902,668 - Dutta , et al. December 2, 2 | 2014-12-02 |
Erase for non-volatile storage Grant 8,885,420 - Oowada , et al. November 11, 2 | 2014-11-11 |
Bit line current trip point modulation for reading nonvolatile storage elements Grant 8,885,416 - Mui , et al. November 11, 2 | 2014-11-11 |
Bit Line Current Trip Point Modulation For Reading Nonvolatile Storage Elements App 20140269083 - Mui; Man L. ;   et al. | 2014-09-18 |
Programming Select Gate Transistors And Memory Cells Using Dynamic Verify Level App 20140254283 - Dong; Yingda ;   et al. | 2014-09-11 |
Partitioned Erase And Erase Verification In Non-volatile Memory App 20140247667 - Dutta; Deepanshu ;   et al. | 2014-09-04 |
Dynamic Erase Depth For Improved Endurance Of Non-volatile Memory App 20140247666 - Dutta; Deepanshu ;   et al. | 2014-09-04 |
Non-volatile memory and method with improved first pass programming Grant 8,811,091 - Li , et al. August 19, 2 | 2014-08-19 |
Programming Select Gate Transistors And Memory Cells Using Dynamic Verify Level App 20140219027 - Dong; Yingda ;   et al. | 2014-08-07 |
Bit Line Current Trip Point Modulation For Reading Nonvolatile Storage Elements App 20140211568 - Mui; Man L. ;   et al. | 2014-07-31 |
Optimized erase operation for non-volatile memory with partially programmed block Grant 8,787,088 - Dutta , et al. July 22, 2 | 2014-07-22 |
Erase For Non-volatile Storage App 20140185382 - Oowada; Ken ;   et al. | 2014-07-03 |
Temperature based compensation during verify operations for non-volatile storage Grant 8,755,234 - Oowada , et al. June 17, 2 | 2014-06-17 |
Read compensation for partially programmed blocks of non-volatile storage Grant 8,743,615 - Lee , et al. June 3, 2 | 2014-06-03 |
Dynamic Bit Line Bias For Programming Non-Volatile Memory App 20140119126 - Dutta; Deepanshu ;   et al. | 2014-05-01 |
Temperature Based Compensation During Verify Operations For Non-volatile Storage App 20140036601 - Oowada; Ken ;   et al. | 2014-02-06 |
Optimized Erase Operation For Non-Volatile Memory With Partially Programmed Block App 20140003147 - Dutta; Deepanshu ;   et al. | 2014-01-02 |
Temperature based compensation during verify operations for non-volatile storage Grant 8,582,381 - Oowada , et al. November 12, 2 | 2013-11-12 |
Nonvolatile Memory And Method For Improved Programming With Reduced Verify App 20130279263 - Dong; Yingda ;   et al. | 2013-10-24 |
Temperature Based Compensation During Verify Operations For Non-volatile Storage App 20130223155 - Oowada; Ken ;   et al. | 2013-08-29 |
Nonvolatile memory and method for improved programming with reduced verify Grant 8,472,257 - Dong , et al. June 25, 2 | 2013-06-25 |
Non-Volatile Memory And Method With Improved First Pass Programming App 20130155769 - Li; Yan ;   et al. | 2013-06-20 |
Read Compensation For Partially Programmed Blocks Of Non-volatile Storage App 20130051148 - Lee; Dana ;   et al. | 2013-02-28 |
Nonvolatile Memory and Method for Improved Programming With Reduced Verify App 20120243323 - Dong; Yingda ;   et al. | 2012-09-27 |
Verification process for non-volatile storage Grant 8,218,367 - Hemink , et al. July 10, 2 | 2012-07-10 |
Programming non-volatile storage including reducing impact from other memory cells Grant 8,218,366 - Dong , et al. July 10, 2 | 2012-07-10 |
Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage Grant 8,130,551 - Oowada , et al. March 6, 2 | 2012-03-06 |
Programming Non-volatile Storage Includng Reducing Impact From Other Memory Cells App 20110255345 - Dong; Yingda ;   et al. | 2011-10-20 |
Extra Dummy Erase Pulses After Shallow Erase-verify To Avoid Sensing Deep Erased Threshold Voltage App 20110242899 - Oowada; Ken ;   et al. | 2011-10-06 |
Verification Process For Non-volatile Storage App 20110235423 - Hemink; Gerrit Jan ;   et al. | 2011-09-29 |
Program voltage compensation with word line bias change to suppress charge trapping in memory Grant 7,995,394 - Dong , et al. August 9, 2 | 2011-08-09 |
Verification process for non-volatile storage Grant 7,978,527 - Hemink , et al. July 12, 2 | 2011-07-12 |
Program Voltage Compensation With Word Line Bias Change To Suppress Charge Trapping In Memory App 20110026331 - Dong; Yingda ;   et al. | 2011-02-03 |
Self-boosting system with suppression of high lateral electric fields Grant 7,864,570 - Oowada January 4, 2 | 2011-01-04 |
Verification Process For Non-volatile Storage App 20090296475 - Hemink; Gerrit Jan ;   et al. | 2009-12-03 |
Self-boosting System With Suppression Of High Lateral Electric Fields App 20090147571 - Oowada; Ken | 2009-06-11 |
Self-boosting system with suppression of high lateral electric fields Grant 7,511,995 - Oowada March 31, 2 | 2009-03-31 |
Non-volatile storage with boosting using channel isolation switching Grant 7,463,522 - Dong , et al. December 9, 2 | 2008-12-09 |
Boosting for non-volatile storage using channel isolation switching Grant 7,460,404 - Dong , et al. December 2, 2 | 2008-12-02 |
Boosting For Non-volatile Storage Using Channel Isolation Switching App 20080279007 - Dong; Yingda ;   et al. | 2008-11-13 |
Non-volatile Storage With Boosting Using Channel Isolation Switching App 20080279008 - Dong; Yingda ;   et al. | 2008-11-13 |
Selective program voltage ramp rates in non-volatile memory Grant 7,447,086 - Wan , et al. November 4, 2 | 2008-11-04 |
Self-boosting method with suppression of high lateral electric fields Grant 7,428,165 - Oowada September 23, 2 | 2008-09-23 |
Method for programming non-volatile memory with reduced program disturb using modified pass voltages Grant 7,355,889 - Hemink , et al. April 8, 2 | 2008-04-08 |
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages Grant 7,355,888 - Hemink , et al. April 8, 2 | 2008-04-08 |
Selective Program Voltage Ramp Rates in Non-Volatile Memory App 20080019180 - Wan; Jun ;   et al. | 2008-01-24 |
Selective application of program inhibit schemes in non-volatile memory Grant 7,295,478 - Wan , et al. November 13, 2 | 2007-11-13 |
Self-boosting system with suppression of high lateral electric fields App 20070236993 - Oowada; Ken | 2007-10-11 |
Self-boosting method with suppression of high lateral electric fields App 20070236992 - Oowada; Ken | 2007-10-11 |
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages App 20070171718 - Hemink; Gerrit Jan ;   et al. | 2007-07-26 |
Method for programming non-volatile memory with reduced program disturb using modified pass voltages App 20070171719 - Hemink; Gerrit Jan ;   et al. | 2007-07-26 |
Selective application of program inhibit schemes in non-volatile memory App 20060279990 - Wan; Jun ;   et al. | 2006-12-14 |