Ooshika; Yoshikazu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ooshika; Yoshikazu.The latest application filed is for "iii nitride semiconductor epitaxial substrate and iii nitride semiconductor light emitting device, and methods of producing the same".

Company Profile

1.8.9

Ooshika; Yoshikazu - Kamisato-machi JP
Ooshika; Yoshikazu - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the same Grant 9,543,469 - Iwata , et al. January 10, 2	2017-01-10
Iii Nitride Semiconductor Epitaxial Substrate And Iii Nitride Semiconductor Light Emitting Device, And Methods Of Producing The Same App 20160172534 - IWATA; Masatoshi ; et al.	2016-06-16
Method of manufacturing a p-AlGaN layer Grant 8,765,222 - Ooshika , et al. July 1, 2	2014-07-01
P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE App 20140166943 - OOSHIKA; Yoshikazu ; et al.	2014-06-19
III nitride epitaxial substrate and deep ultraviolet light emitting device using the same Grant 8,742,396 - Ooshika June 3, 2	2014-06-03
Semiconductor device and method of producing the same Grant 8,735,938 - Ooshika , et al. May 27, 2	2014-05-27
Nitride semiconductor device and method of producing the same Grant 8,680,509 - Ooshika , et al. March 25, 2	2014-03-25
Semiconductor Device And Method Of Producing The Same App 20130292641 - OOSHIKA; Yoshikazu ; et al.	2013-11-07
Iii Nitride Epitaxial Substrate And Deep Ultraviolet Light Emitting Device Using The Same App 20130181188 - OOSHIKA; Yoshikazu	2013-07-18
Semiconductor Device And Method Of Producing The Same App 20120326209 - Ooshika; Yoshikazu ; et al.	2012-12-27
Nitride semiconductor light-emitting element and method of manufacturing the same Grant 8,330,168 - Ohta , et al. December 11, 2	2012-12-11
P-algan Layer, Method Of Manufacturing The Same, And Group Iii Nitride Semiconductor Light Emitting Device App 20120248387 - Ooshika; Yoshikazu ; et al.	2012-10-04
Nitride Semiconductor Device And Method Of Producing The Same App 20120175589 - Ooshika; Yoshikazu ; et al.	2012-07-12
Nitride Semiconductor Light-emitting Element And Method Of Manufacturing The Same App 20110266553 - Ohta; Yutaka ; et al.	2011-11-03
Light Emitting Semiconductor App 20090250684 - Ohta; Yutaka ; et al.	2009-10-08

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