loadpatents
name:-0.082106113433838
name:-0.04072904586792
name:-0.138258934021
Ontalus; Viorel C. Patent Filings

Ontalus; Viorel C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ontalus; Viorel C..The latest application filed is for "insulated-gate bipolar transistor with enhanced frequency response, and related methods".

Company Profile
1.29.25
  • Ontalus; Viorel C. - Hartford CT
  • ONTALUS; Viorel C. - Unionville CT
  • Ontalus; Viorel C. - Danbury CT
  • Ontalus; Viorel C. - Hopewell Junction NY
  • - Danbury CT US
  • Ontalus; Viorel C. - Fishkill NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Insulated-gate bipolar transistor with enhanced frequency response, and related methods
Grant 11,404,563 - Ontalus August 2, 2
2022-08-02
Insulated-gate Bipolar Transistor With Enhanced Frequency Response, And Related Methods
App 20210202722 - Ontalus; Viorel C.
2021-07-01
Finfet Device With Low Resistance Fins
App 20180108654 - ONTALUS; Viorel C. ;   et al.
2018-04-19
Contact resistance optimization via EPI growth engineering
Grant 9,673,295 - Levesque , et al. June 6, 2
2017-06-06
Self aligned device with enhanced stress and methods of manufacture
Grant 9,293,593 - Holt , et al. March 22, 2
2016-03-22
Contact Resistance Optimization Via Epi Growth Engineering
App 20150349068 - Levesque; Annie ;   et al.
2015-12-03
Structure and method for increasing strain in a device
Grant 9,059,285 - Chan , et al. June 16, 2
2015-06-16
Pre-gate, source/drain strain layer formation
Grant 9,059,286 - Holt , et al. June 16, 2
2015-06-16
Semiconductor structures and methods of manufacturing the same
Grant 9,013,008 - Li , et al. April 21, 2
2015-04-21
Self aligned device with enhanced stress and methods of manufacture
Grant 9,006,052 - Holt , et al. April 14, 2
2015-04-14
Stressed channel FET with source/drain buffers
Grant 8,921,939 - Johnson , et al. December 30, 2
2014-12-30
Pre-gate, Source/drain Strain Layer Formation
App 20140213029 - Holt; Judson R. ;   et al.
2014-07-31
Method for growing strain-inducing materials in CMOS circuits in a gate first flow
Grant 8,779,525 - Bai , et al. July 15, 2
2014-07-15
Semiconductor Structures And Methods Of Manufacturing The Same
App 20140034970 - LI; Xi ;   et al.
2014-02-06
Field effect transistor device
Grant 8,618,617 - Chan , et al. December 31, 2
2013-12-31
Field effect transistor device
Grant 08618617 -
2013-12-31
Semiconductor structures and methods of manufacturing the same
Grant 8,604,564 - Li , et al. December 10, 2
2013-12-10
Structure and method for increasing strain in a device
Grant 8,551,845 - Chan , et al. October 8, 2
2013-10-08
Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor
Grant 8,513,122 - Lavoie , et al. August 20, 2
2013-08-20
Field effect transistor device
Grant 8,492,234 - Chan , et al. July 23, 2
2013-07-23
Field Effect Transistor Device
App 20130175547 - Chan; Kevin K. ;   et al.
2013-07-11
Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor
Grant 8,482,076 - Lavoie , et al. July 9, 2
2013-07-09
Method For Growing Strain-inducing Materials In Cmos Circuits In A Gate First Flow
App 20130161759 - Bai; Bo ;   et al.
2013-06-27
Structure And Method For Increasing Strain In A Device
App 20130161649 - Chan; Kevin K. ;   et al.
2013-06-27
Method And Structure For Differential Silicide And Recessed Or Raised Source/drain To Improve Field Effect Transistor
App 20130149865 - Lavoie; Christian ;   et al.
2013-06-13
Stressed Channel Fet With Source/drain Buffers
App 20130140636 - Johnson; Jeffrey B. ;   et al.
2013-06-06
Method for growing strain-inducing materials in CMOS circuits in a gate first flow
Grant 8,426,265 - Bai , et al. April 23, 2
2013-04-23
Stressed channel FET with source/drain buffers
Grant 8,361,847 - Johnson , et al. January 29, 2
2013-01-29
Reducing dislocation formation in semiconductor devices through targeted carbon implantation
Grant 8,343,825 - Domenicucci , et al. January 1, 2
2013-01-01
Semiconductor structures and methods of manufacturing the same
Grant 8,278,164 - Li , et al. October 2, 2
2012-10-02
Self Aligned Device With Enhanced Stress And Methods Of Manufacture
App 20120228639 - HOLT; Judson R. ;   et al.
2012-09-13
Pre-gate, Source/drain Strain Layer Formation
App 20120181578 - Holt; Judson R. ;   et al.
2012-07-19
Reducing Dislocation Formation In Semiconductor Devices Through Targeted Carbon Implantation
App 20120184075 - Domenicucci; Anthony G. ;   et al.
2012-07-19
Semiconductor Structures And Methods Of Manufacturing The Same
App 20120175713 - LI; Xi ;   et al.
2012-07-12
Asymmetric source and drain stressor regions
Grant 8,193,065 - Johnson , et al. June 5, 2
2012-06-05
Method For Growing Strain-inducing Materials In Cmos Circuits In A Gate First Flow
App 20120104507 - Bai; Bo ;   et al.
2012-05-03
Self Aligned Device With Enhanced Stress And Methods Of Manufacture
App 20120086046 - Holt; Judson R. ;   et al.
2012-04-12
Structure And Method For Increasing Strain In A Device
App 20120068193 - CHAN; KEVIN K. ;   et al.
2012-03-22
Field Effect Transistor Device
App 20110316046 - Chan; Kevin K. ;   et al.
2011-12-29
Pre-gate, Source/drain Strain Layer Formation
App 20110215376 - Holt; Judson R. ;   et al.
2011-09-08
Asymmetric Source And Drain Stressor Regions
App 20110212587 - Johnson; Jeffrey B. ;   et al.
2011-09-01
Semiconductor Structures And Methods Of Manufacturing The Same
App 20110186938 - LI; Xi ;   et al.
2011-08-04
Method And Structure For Differential Silicide And Recessed Or Raised Source/drain To Improve Field Effect Transistor
App 20110062525 - Lavoie; Christian ;   et al.
2011-03-17
Asymmetric Source And Drain Stressor Regions
App 20110049582 - Johnson; Jeffrey B. ;   et al.
2011-03-03
Activating Dopants Using Multiple Consecutive Millisecond-range Anneals
App 20100240227 - Gluschenkov; Oleg ;   et al.
2010-09-23
Activating dopants using multiple consecutive millisecond-range anneals
Grant 7,786,025 - Gluschenkov , et al. August 31, 2
2010-08-31
Process And Method To Lower Contact Resistance
App 20090146223 - Jain; Sameer H. ;   et al.
2009-06-11

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