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Patent applications and USPTO patent grants for Onodera; Eio.The latest application filed is for "insulated-gate semiconductor device".
Patent | Date |
---|---|
Insulated-gate semiconductor device with protection diode Grant 8,344,457 - Noguchi , et al. January 1, 2 | 2013-01-01 |
Noise filter and noise-filter-incorporated amplifier circuit Grant 8,134,423 - Onodera March 13, 2 | 2012-03-13 |
Amplifying element and manufacturing method thereof Grant 8,107,644 - Onodera January 31, 2 | 2012-01-31 |
Amplifier device Grant 7,830,210 - Onodera November 9, 2 | 2010-11-09 |
Insulated-gate semiconductor device and PN junction diodes Grant 7,825,474 - Noguchi , et al. November 2, 2 | 2010-11-02 |
Insulated-gate Semiconductor Device App 20100148268 - NOGUCHI; Yasunari ;   et al. | 2010-06-17 |
Insulated-gate semiconductor device Grant 7,732,869 - Noguchi , et al. June 8, 2 | 2010-06-08 |
Amplifier Device App 20100102886 - ONODERA; Eio | 2010-04-29 |
Noise Filter And Noise-filter-incorporated Amplifier Circuit App 20090243755 - ONODERA; Eio | 2009-10-01 |
Amplifying Element And Manufacturing Method Thereof App 20090245543 - Onodera; Eio | 2009-10-01 |
Insulated-gate Semiconductor Device App 20080079078 - NOGUCHI; Yasunari ;   et al. | 2008-04-03 |
Insulated-gate Semiconductor Device App 20080079079 - Noguchi; Yasunari ;   et al. | 2008-04-03 |
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