loadpatents
name:-0.017807006835938
name:-0.014378070831299
name:-0.0017271041870117
Onai; Takahiro Patent Filings

Onai; Takahiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Onai; Takahiro.The latest application filed is for "silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method".

Company Profile
0.14.11
  • Onai; Takahiro - Kodaira N/A JP
  • Onai; Takahiro - Ome JP
  • Onai; Takahiro - Kokubunji JP
  • Onai; Takahiro - Hachioji JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
Grant 8,436,333 - Saito , et al. May 7, 2
2013-05-07
Device and data processing method employing the device
Grant 7,405,588 - Kawahara , et al. July 29, 2
2008-07-29
Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
App 20080128713 - Saito; Shinichi ;   et al.
2008-06-05
Semiconductor device and manufacturing thereof
Grant 7,042,055 - Saito , et al. May 9, 2
2006-05-09
Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region
Grant 7,042,051 - Ootsuka , et al. May 9, 2
2006-05-09
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
Grant 7,029,988 - Ohnishi , et al. April 18, 2
2006-04-18
Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics
Grant 6,982,465 - Kumagai , et al. January 3, 2
2006-01-03
Field effect transistor and manufacturing method thereof
App 20050139867 - Saito, Shin-ichi ;   et al.
2005-06-30
Device and data processing method employing the device
App 20050104621 - Kawahara, Takayuki ;   et al.
2005-05-19
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
Grant 6,878,606 - Ohnishi , et al. April 12, 2
2005-04-12
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
App 20050032327 - Ohnishi, Kazuhiro ;   et al.
2005-02-10
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
App 20040121554 - Ohnishi, Kazuhiro ;   et al.
2004-06-24
Semiconductor device
App 20040075148 - Kumagai, Yukihiro ;   et al.
2004-04-22
Semiconductor device having a replacement gate type field effect transistor and its manufacturing method
Grant 6,667,199 - Torii , et al. December 23, 2
2003-12-23
Semiconductor device and a method of manufacturing the same
App 20030094627 - Ootsuka, Fumio ;   et al.
2003-05-22
Semiconductor device and manufacturing thereof
App 20030042535 - Saito, Shinichi ;   et al.
2003-03-06
Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution
Grant 6,524,903 - Ootsuka , et al. February 25, 2
2003-02-25
Reference voltage generator
App 20030025551 - Kobayashi, Naoki ;   et al.
2003-02-06
Semiconductor device and its manufacturing method
App 20030022422 - Torii, Kazuyoshi ;   et al.
2003-01-30
Semiconductor device and a method of manufacturing the same
App 20020043665 - OOtsuka, Fumio ;   et al.
2002-04-18
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
Grant 6,004,865 - Horiuchi , et al. December 21, 1
1999-12-21
Multi-layered structure having single crystalline semiconductor film formed on insulator
Grant 5,523,602 - Horiuchi , et al. June 4, 1
1996-06-04
Semiconductor device
Grant 5,430,317 - Onai , et al. July 4, 1
1995-07-04
Semiconductor device with optimal distance between emitter and trench isolation
Grant 5,109,263 - Nanba , et al. April 28, 1
1992-04-28

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